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Journal Articles

Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics

Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 060804 (2023)
https://doi.org/10.1116/5.0156557
Published: November 2023
View article titled, Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics
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Journal Articles

Influence of the Cl2 etching on the Al2O3/GaN metal–oxide–semiconductor interface

Featured
T. Meyer, S. Boubenia, C. Petit-Etienne, B. Salem, E. Pargon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062208 (2022)
https://doi.org/10.1116/6.0002133
Published: November 2022
View article titled, Influence of the Cl<sub>2</sub> etching on the Al<sub>2</sub>O<sub>3</sub>/GaN metal–oxide–semiconductor interface
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Journal Articles

Defect characterization in floating body transistors using a single pulse charge pumping method

Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 053205 (2021)
https://doi.org/10.1116/6.0001172
Published: September 2021
View article titled, Defect characterization in floating body transistors using a single pulse charge pumping method
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Journal Articles

Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits

Yanxue Hong, A. N. Ramanayaka, Ryan Stein, M. D. Stewart, J. M. Pomeroy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 012204 (2021)
https://doi.org/10.1116/6.0000549
Published: December 2020
View article titled, Developing single-layer metal-oxide-semiconductor quantum dots for diagnostic qubits
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Journal Articles

Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO2 dielectric

Piyas Samanta
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 062204 (2019)
https://doi.org/10.1116/1.5120268
Published: November 2019
View article titled, Efficient methodology for estimation of metal effective work function, interface trap, and fixed oxide charges in metal-oxide-semiconductor capacitors with dual layer high - κ /SiO<sub>2</sub> dielectric
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Journal Articles

Effect of strontium doping on indium zinc oxide thin film transistors fabricated by low-temperature solution process

Jin-Hyun Kim, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Sang-Woo Kim, Su-Jin Choi, Jong-Gyu Cheon, Hyung-Min Ji, Kyoung-Moon Yu, Seong-Yong Cho, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 032201 (2019)
https://doi.org/10.1116/1.5092286
Published: April 2019
View article titled, Effect of strontium doping on indium zinc oxide thin film transistors fabricated by low-temperature solution process
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Journal Articles

Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Chung-Chun Hsu, Wei-Chun Chi, Yi-He Tsai, Ming-Li Tsai, Shin-Yuan Wang, Chen-Han Chou, Jun Lin Zhang, Guang-Li Luo, Chao-Hsin Chien
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 051204 (2018)
https://doi.org/10.1116/1.5051519
Published: August 2018
View article titled, Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
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Journal Articles

Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers

Editor’s Pick
Jin-Tsong Jeng, Yan-Lin Li, Chin-Lung Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 022203 (2017)
https://doi.org/10.1116/1.4978048
Published: March 2017
View article titled, Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLa<sub>x</sub>Ti<sub>y</sub>O<sub>z</sub> charge trapping layers
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Journal Articles

Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices

Shogo Mochizuki, Rainer Loesing, Yun-Yu Wang, Hemanth Jagannathan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 021208 (2017)
https://doi.org/10.1116/1.4975923
Published: February 2017
View article titled, Study of phosphorus doped Si:C films formed by <em>in situ</em> doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
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Journal Articles

Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices

Debaleen Biswas, Manavendra Narayan Singh, Anil Kumar Sinha, Satyaranjan Bhattacharyya, Supratic Chakraborty
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022201 (2016)
https://doi.org/10.1116/1.4941247
Published: February 2016
View article titled, Effect of excess hafnium on HfO<sub>2</sub> crystallization temperature and leakage current behavior of HfO<sub>2</sub>/Si metal-oxide-semiconductor devices
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Journal Articles

Optimization of annealing temperature for high-κ-based gate oxides using differential scanning calorimetry

Debaleen Biswas, Anil Kumar Sinha, Supratic Chakraborty
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 052205 (2015)
https://doi.org/10.1116/1.4929442
Published: August 2015
View article titled, Optimization of annealing temperature for high-<em>κ</em>-based gate oxides using differential scanning calorimetry
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Journal Articles

Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Shihyun Ahn, Chen Dong, Weidi Zhu, Byung-Jae Kim, Ya-Hsi Hwang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Erin Patrick, Brian Tracy, David J. Smith, Ivan I. Kravchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051208 (2015)
https://doi.org/10.1116/1.4928730
Published: August 2015
View article titled, Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
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Journal Articles

Experimental demonstration of hybrid CMOS-single electron transistor circuits

Aaron A. Prager, Hubert C. George, Alexei O. Orlov, Gregory L. Snider
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 041004 (2011)
https://doi.org/10.1116/1.3597833
Published: August 2011
View article titled, Experimental demonstration of hybrid CMOS-single electron transistor circuits
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Journal Articles

Technology computer-aided design simulation study for a strained InGaAs channel n -type metal-oxide-semiconductor field-effect transistor with a high- k dielectric oxide layer and a metal gate electrode

Shu-Tong Chang, Chang-Chun Lee, P.-H. Sun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 032203 (2011)
https://doi.org/10.1116/1.3578466
Published: April 2011
View article titled, Technology computer-aided design simulation study for a strained InGaAs channel n -type metal-oxide-semiconductor field-effect transistor with a high- k dielectric oxide layer and a metal gate electrode
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Journal Articles

Modeling of tunneling through a three-layer gate stack with/without a quantum well

A. Mazurak, J. Walczak, B. Majkusiak
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 020605 (2011)
https://doi.org/10.1116/1.3569626
Published: April 2011
View article titled, Modeling of tunneling through a three-layer gate stack with/without a quantum well
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Journal Articles

Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors

E. Amat, J. Martin-Martínez, M. B. Gonzalez, R. Rodríguez, M. Nafría, X. Aymerich, P. Verheyen, E. Simoen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AB07 (2011)
https://doi.org/10.1116/1.3523396
Published: January 2011
View article titled, Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors
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Journal Articles

Fluorine implantation for effective work function control in p -type metal-oxide-semiconductor high- k metal gate stacks

A. Fet, V. Häublein, A. J. Bauer, H. Ryssel, L. Frey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A905 (2011)
https://doi.org/10.1116/1.3521471
Published: January 2011
View article titled, Fluorine implantation for effective work function control in p -type metal-oxide-semiconductor high- k metal gate stacks
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Journal Articles

Multiphonon hole trapping from first principles

F. Schanovsky, W. Gös, T. Grasser
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A201 (2011)
https://doi.org/10.1116/1.3533269
Published: January 2011
View article titled, Multiphonon hole trapping from first principles
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Journal Articles

Evaluation of emission uniformity of nanocrystalline silicon planar cathodes

Hidetaka Shimawaki, Katsuhisa Murakami, Yoichiro Neo, Hidenori Mimura, Fujio Wakaya, Mikio Takai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C2C49–C2C52 (2010)
https://doi.org/10.1116/1.3271165
Published: April 2010
View article titled, Evaluation of emission uniformity of nanocrystalline silicon planar cathodes
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Journal Articles

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

S. Sonde, F. Giannazzo, V. Raineri, E. Rimini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 868–873 (2009)
https://doi.org/10.1116/1.3081890
Published: March 2009
View article titled, Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
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