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Journal Articles

5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling

J. Vac. Sci. Technol. B 42, 043202 (2024)

https://doi.org/10.1116/6.0003584

Published: June 2024

View article titled, 5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Journal Articles

Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Jiechao Jiang, Nonso Martin Chetuya, Efstathios I. Meletis, Joseph H. Ngai, Gordon J. Grzybowski, Bruce Claflin

J. Vac. Sci. Technol. B 42, 034001 (2024)

https://doi.org/10.1116/6.0003445

Published: March 2024

View article titled, Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Journal Articles

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Lingyu Meng, Christopher Chae, Menglin Zhu, Jinwoo Hwang, Kathleen Kash, Hongping Zhao

J. Vac. Sci. Technol. B 41, 062207 (2023)

https://doi.org/10.1116/6.0003141

Published: November 2023

View article titled, Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Journal Articles

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Chunyu Zhao, Xu Zhang, Chak Wah Tang, Jiannong Wang, Kei May Lau

J. Vac. Sci. Technol. B 38, 060602 (2020)

https://doi.org/10.1116/6.0000527

Published: October 2020

View article titled, Selective lateral photoelectrochemical wet etching of InGaN nanorods

Journal Articles

Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb₂Te₃ thin films on GaAs (100)

Adrian Podpirka, Jarod Gagnon, Christine Zgrabik, Jonathan Pierce, David Shrekenhamer

J. Vac. Sci. Technol. B 38, 032210 (2020)

https://doi.org/10.1116/6.0000062

Published: April 2020

View article titled, Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb2Te3 thin films on GaAs (100)

Journal Articles

Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices

Yunong Hu, Man Chun Tam, Zbigniew R. Wasilewski

J. Vac. Sci. Technol. B 37, 032902 (2019)

https://doi.org/10.1116/1.5088974

Published: April 2019

View article titled, Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices

Journal Articles

Investigation of digital alloyed AlInSb metamorphic buffers

Vinita Dahiya, Julia I. Deitz, David A. Hollingshead, John A. Carlin, Tyler J. Grassman, Sanjay Krishna

J. Vac. Sci. Technol. B 36, 02D111 (2018)

https://doi.org/10.1116/1.5018260

Published: March 2018

View article titled, Investigation of digital alloyed AlInSb metamorphic buffers

Journal Articles

Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Serhii B. Kryvyi, Petro M. Lytvyn, Vasyl P. Kladko, Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy. I. Mazur, Gregory J. Salamo, Shibin Li, Pavlo P. Kogutyuk, Alexander E. Belyaev

J. Vac. Sci. Technol. B 35, 062902 (2017)

https://doi.org/10.1116/1.4999468

Published: October 2017

View article titled, Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Journal Articles

Fabrication and pixel characterization of a row-column addressable 128 × 128 InAs/GaSb type-II superlattice midwave infrared photodiode array

Sona Das, Utpal Das

J. Vac. Sci. Technol. B 35, 061207 (2017)

https://doi.org/10.1116/1.4997143

Published: October 2017

View article titled, Fabrication and pixel characterization of a row-column addressable 128 × 128 InAs/GaSb type-II superlattice midwave infrared photodiode array

Journal Articles

Simulated x-ray diffraction from pseudomorphic GaAs/In_0.3Ga_0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates

Fahad A. Althowibi, John E. Ayers

J. Vac. Sci. Technol. B 35, 03D108 (2017)

https://doi.org/10.1116/1.4981015

Published: April 2017

View article titled, Simulated x-ray diffraction from pseudomorphic GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates

Journal Articles

X-ray analysis of metamorphic In_xGa_1-xAs/In_yGa_1-yAs superlattices on GaAs (001) substrates

Fahad A. Althowibi, John E. Ayers

J. Vac. Sci. Technol. B 35, 03D105 (2017)

https://doi.org/10.1116/1.4979323

Published: March 2017

View article titled, X-ray analysis of metamorphic InxGa1-xAs/InyGa1-yAs superlattices on GaAs (001) substrates

Journal Articles

Electrical properties related to growth defects in metamorphic GaSb films on Si

Shun Sasaki, Katie Dropiewski, Shailesh Madisetti, Vadim Tokranov, Michael Yakimov, Serge Oktyabrsky, Steven Bentley, Rohit Galatage, Ajey P. Jacob

J. Vac. Sci. Technol. B 35, 011203 (2017)

https://doi.org/10.1116/1.4973215

Published: December 2016

View article titled, Electrical properties related to growth defects in metamorphic GaSb films on Si

Journal Articles

Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

Heather J. Haugan, Gail J. Brown, Benjamin V. Olson, Emil A. Kadlec, Jin K. Kim, Eric A. Shaner

J. Vac. Sci. Technol. B 34, 02L104 (2016)

https://doi.org/10.1116/1.4941132

Published: February 2016

View article titled, Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

Journal Articles

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Hyun Kum, Mihyun Kim, Dong-gun Lee, Youngjo Tak, Jongsun Maeng, Joosung Kim, Gilho Gu, Joong Jung Kim, Yongil Kim, Jun-Youn Kim, Youngsoo Park

J. Vac. Sci. Technol. B 33, 060602 (2015)

https://doi.org/10.1116/1.4933039

Published: October 2015

View article titled, Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Journal Articles

Near-nanoscale-resolved energy band structure of LaNiO₃/La_2/3Sr_1/3MnO₃/SrTiO₃ heterostructures and their interfaces

Thaddeus J. Asel, Hantian Gao, Tyler J. Heinl, Drew Adkins, Patrick M. Woodward, Jason Hoffman, Anand Bhattacharya, Leonard J. Brillson

J. Vac. Sci. Technol. B 33, 04E103 (2015)

https://doi.org/10.1116/1.4922270

Published: June 2015

View article titled, Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces

Journal Articles

Atomic layer deposited passivation layers for superlattice photodetectors

Omer Salihoglu

J. Vac. Sci. Technol. B 32, 051201 (2014)

https://doi.org/10.1116/1.4891164

Published: July 2014

View article titled, Atomic layer deposited passivation layers for superlattice photodetectors

Journal Articles

Dual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth

Richard P. Leavitt, Lei He, Christopher J. K. Richardson

J. Vac. Sci. Technol. B 32, 041205 (2014)

https://doi.org/10.1116/1.4887482

Published: July 2014

View article titled, Dual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth

Journal Articles

Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

Xiaojing Li, Degang Zhao, Desheng Jiang, Zongshun Liu, Ping Chen, Lingcong Le, Jing Yang, Xiaoguang He, Shuming Zhang, Jianjun Zhu, Hui Wang, Baoshun Zhang, Jianping Liu, Hui Yang

J. Vac. Sci. Technol. B 32, 031204 (2014)

https://doi.org/10.1116/1.4871460

Published: April 2014

View article titled, Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

Journal Articles

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Preston T. Webster, Nathaniel A. Riordan, Chaturvedi Gogineni, Shi Liu, Jing Lu, Xin-Hao Zhao, David J. Smith, Yong-Hang Zhang, Shane R. Johnson

J. Vac. Sci. Technol. B 32, 02C120 (2014)

https://doi.org/10.1116/1.4868111

Published: March 2014

View article titled, Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Journal Articles

Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection

Heather J. Haugan, Gail J. Brown, Krishnamurthy Mahalingam, Larry Grazulis, Gary T. Noe, Nathan E. Ogden, Junichiro Kono

J. Vac. Sci. Technol. B 32, 02C109 (2014)

https://doi.org/10.1116/1.4864746

Published: February 2014

View article titled, Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection

NARROW

Topics

5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Role of substrate temperature and tellurium flux on the electrical and optical properties of MBE grown GeTe and Sb₂Te₃ thin films on GaAs (100)

Unintentional As incorporation into AlSb and interfacial layers within InAs/AlSb superlattices

Investigation of digital alloyed AlInSb metamorphic buffers

Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template

Fabrication and pixel characterization of a row-column addressable 128 × 128 InAs/GaSb type-II superlattice midwave infrared photodiode array

Simulated x-ray diffraction from pseudomorphic GaAs/In_0.3Ga_0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates

X-ray analysis of metamorphic In_xGa_1-xAs/In_yGa_1-yAs superlattices on GaAs (001) substrates

Electrical properties related to growth defects in metamorphic GaSb films on Si

Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Near-nanoscale-resolved energy band structure of LaNiO₃/La_2/3Sr_1/3MnO₃/SrTiO₃ heterostructures and their interfaces

Atomic layer deposited passivation layers for superlattice photodetectors

Dual-superlattice calibrations for group-III species in III-V semiconductor epitaxial structure growth

Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection

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