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Journal Articles

Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature

Jinjin Tang, Guipeng Liu, Guijuan Zhao, Shu’an Xing, Salamat Ali Malik
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 023202 (2020)
https://doi.org/10.1116/1.5134840
Published: January 2020
View article titled, Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature
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Journal Articles

Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN

Stefan Schmult, Victor V. Solovyev, Steffen Wirth, Andreas Großer, Thomas Mikolajick, Igor V. Kukushkin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 021210 (2019)
https://doi.org/10.1116/1.5088927
Published: March 2019
View article titled, Magneto-optical confirmation of Landau level splitting in a GaN/AlGaN 2DEG grown on bulk GaN
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Journal Articles

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Syed Mukulika Dinara, Saptarsi Ghosh, Sanjay Kr. Jana, Shubhankar Majumdar, Dhrubes Biswas, Sekhar Bhattacharya
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 051202 (2017)
https://doi.org/10.1116/1.4996735
Published: July 2017
View article titled, Analysis of strain induced carrier confinement with varying passivation thickness of the Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN heterostructure with graded Al<sub>x</sub>Ga<sub>1-x</sub>N buffer on Si (111) substrate
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Journal Articles

Experimental and computational study of zero dimensional metallic behavior at the LaLuO3/SrTiO3 interface

Pini Shekhter, Cecile Uzan-Saguy, Jürgen Schubert, Yaron Amouyal, Moshe Eizenberg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 021204 (2016)
https://doi.org/10.1116/1.4943570
Published: March 2016
View article titled, Experimental and computational study of zero dimensional metallic behavior at the LaLuO<sub>3</sub>/SrTiO<sub>3</sub> interface
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Journal Articles

Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures

Irving Eduardo Cortes-Mestizo, Leticia Ithsmel Espinosa-Vega, Jose Angel Espinoza-Figueroa, Alejandro Cisneros-de-la-Rosa, Eric Eugenio-Lopez, Victor Hugo Mendez-Garcia, Edgar Briones, Joel Briones, Luis Zamora-Peredo, Ravindranath Droopad, Cristo Yee-Rendon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 02L110 (2016)
https://doi.org/10.1116/1.4942898
Published: March 2016
View article titled, Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures
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Journal Articles

Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping

Tsung Sheng Kang, Yi-Hsuan Lin, Shihyun Ahn, Fan Ren, Brent P. Gila, Stephen J. Pearton, David J. Cheney
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 011203 (2016)
https://doi.org/10.1116/1.4936861
Published: December 2015
View article titled, Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping
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Journal Articles

Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping

Tsung-Sheng Kang, Fan Ren, Brent P. Gila, Steve J. Pearton, Erin Patrick, David J. Cheney, Mark Law, Ming-Lan Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 061202 (2015)
https://doi.org/10.1116/1.4931790
Published: September 2015
View article titled, Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping
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Journal Articles

Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Lwin Min Kyaw, Lakshmi Kanta Bera, Thirumaleshwara N. Bhat, Yi Liu, Hui Ru Tan, Surani Bin Dolmanan, Eng Fong Chor, Sudhiranjan Tripathy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051203 (2015)
https://doi.org/10.1116/1.4927366
Published: July 2015
View article titled, Channel temperature measurements of In<sub>x</sub>Al<sub>1−x</sub>N/GaN high electron mobility transistors on Si(111) using optical spectroscopy
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Journal Articles

Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy

Sanjay Kr. Jana, Saptarsi Ghosh, Syed Mukulika Dinara, Mihir Mahata, Soumen Das, Dhrubes Biswas
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 041206 (2015)
https://doi.org/10.1116/1.4926968
Published: July 2015
View article titled, Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy
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Journal Articles

Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates

Thirumaleshwara N. Bhat, Surani B. Dolmanan, Yilmaz Dikme, Hui R. Tan, Lakshmi K. Bera, Sudhiranjan Tripathy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021206 (2014)
https://doi.org/10.1116/1.4866429
Published: February 2014
View article titled, Structural and optical properties of Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates
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Journal Articles

InGaAs/GaAsSb based two-dimensional electron gases

Hermann Detz, Jonathan Silvano de Sousa, Horst Leonhardt, Pavel Klang, Tobias Zederbauer, Aaron Maxwell Andrews, Werner Schrenk, Jürgen Smoliner, Gottfried Strasser
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 02C104 (2014)
https://doi.org/10.1116/1.4863299
Published: January 2014
View article titled, InGaAs/GaAsSb based two-dimensional electron gases
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Journal Articles

Atom probe tomography of AlInN/GaN HEMT structures

Nabil Dawahre, Gang Shen, Steven N. Renfrow, Seongsin M. Kim, Patrick Kung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 041802 (2013)
https://doi.org/10.1116/1.4807321
Published: May 2013
View article titled, Atom probe tomography of AlInN/GaN HEMT structures
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Journal Articles

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Chien-Fong Lo, Lu Liu, Byung-Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Doré, Chien-Hsing Hsu, Jihyun Kim, Amir M. Dabiran, Peter P. Chow
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 010606 (2012)
https://doi.org/10.1116/1.3672010
Published: December 2011
View article titled, Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
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Journal Articles

Optical characterization of Al x Ga 1 − x As / GaAs modulation-doped heterostructures grown under As 2 and As 4 fluxes

D. Vázquez-Cortés, C. Soubervielle-Montalvo, V. H. Méndez-García, L. Zamora-Peredo, S. Jiménez-Sandoval
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3I13–C3I16 (2010)
https://doi.org/10.1116/1.3374325
Published: May 2010
View article titled, Optical characterization of Al x Ga 1 − x As / GaAs modulation-doped heterostructures grown under As 2 and As 4 fluxes
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Journal Articles

Molecular beam epitaxy of high mobility In 0.75 Ga 0.25 As for electron spin transport applications

P. J. Simmonds, S. N. Holmes, H. E. Beere, I. Farrer, F. Sfigakis, D. A. Ritchie, M. Pepper
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2066–2070 (2009)
https://doi.org/10.1116/1.3156736
Published: July 2009
View article titled, Molecular beam epitaxy of high mobility In 0.75 Ga 0.25 As for electron spin transport applications
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Journal Articles

Electron transport properties of Zn 0.88 Mn 0.12 O ∕ Zn O modulation-doped heterostructures

K. Masuko, A. Ashida, T. Yoshimura, N. Fujimura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1760–1764 (2009)
https://doi.org/10.1116/1.3093916
Published: May 2009
View article titled, Electron transport properties of Zn 0.88 Mn 0.12 O ∕ Zn O modulation-doped heterostructures
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Journal Articles

Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide

S. Sonde, F. Giannazzo, V. Raineri, E. Rimini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 868–873 (2009)
https://doi.org/10.1116/1.3081890
Published: March 2009
View article titled, Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide
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Journal Articles

Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires

T. Sand-Jespersen, M. Aagesen, C. B. Sørensen, P. E. Lindelof, J. Nygård
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1609–1612 (2008)
https://doi.org/10.1116/1.2839634
Published: August 2008
View article titled, Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires
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Journal Articles

Steady state and transient behavior of currents in Al Ga N ∕ Ga N planar Schottky diodes and mechanism of current collapse

Hideki Hasegawa, Masamichi Akazawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1542–1550 (2008)
https://doi.org/10.1116/1.2929865
Published: August 2008
View article titled, Steady state and transient behavior of currents in Al Ga N ∕ Ga N planar Schottky diodes and mechanism of current collapse
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Journal Articles

High electron mobility InAs 0.8 Sb 0.2 grown on InP substrates by gas source molecular beam epitaxy

Chichih Liao, Bing-Ruey Wu, K. C. Hsieh, K. Y. Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1078–1080 (2008)
https://doi.org/10.1116/1.2884738
Published: May 2008
View article titled, High electron mobility InAs 0.8 Sb 0.2 grown on InP substrates by gas source molecular beam epitaxy
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