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Journal Articles

Piezoelectric effect of crystal nanodomains on the friction force

Michiko Sasaki, Masahiro Goto
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 052803 (2022)
https://doi.org/10.1116/6.0001881
Published: September 2022
View article titled, Piezoelectric effect of crystal nanodomains on the friction force
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Journal Articles

ZnO piezoelectric coatings used for the ultrasonic excitation of longitudinal-transverse waves and their application for smart bolts

Yanghui Jiang, Jingyu Li, Guangming Jiao, Wensheng Li, Yan Liu, Chuan Wang, Binhong Xia, Binhua Wan, Jun Zhang, Vasiliy Pelenovich, Sheng Liu, Bing Yang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 043002 (2022)
https://doi.org/10.1116/6.0001845
Published: June 2022
View article titled, ZnO piezoelectric coatings used for the ultrasonic excitation of longitudinal-transverse waves and their application for smart bolts
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Journal Articles

Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides

Alex C. De Palma, Gabriel Cossio, Kayleigh Jones, Jiamin Quan, Xiaoqin Li, Edward T. Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 042205 (2020)
https://doi.org/10.1116/6.0000251
Published: July 2020
View article titled, Strain-dependent luminescence and piezoelectricity in monolayer transition metal dichalcogenides
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Journal Articles

Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress

Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 042201 (2018)
https://doi.org/10.1116/1.5023844
Published: June 2018
View article titled, Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress
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Journal Articles

Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Michael D. Henry, Travis R. Young, Erica A. Douglas, Benjamin A. Griffin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03E104 (2018)
https://doi.org/10.1116/1.5023918
Published: May 2018
View article titled, Reactive sputter deposition of piezoelectric Sc<sub>0.12</sub>Al<sub>0.88</sub>N for contour mode resonators
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Journal Articles

Preliminary study of a fast massive gas injection system for plasma disruption mitigation

Gerardo D'Elia, Antonio Frattolillo, Massimiliano Bucci, Filippo Gravanti
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 01A103 (2018)
https://doi.org/10.1116/1.4996069
Published: October 2017
View article titled, Preliminary study of a fast massive gas injection system for plasma disruption mitigation
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Journal Articles

Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements

Chi-Fu Yen, Sanjeevi Sivasankar
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 053201 (2017)
https://doi.org/10.1116/1.4994315
Published: September 2017
View article titled, Minimizing open-loop piezoactuator nonlinearity artifacts in atomic force microscope measurements
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Includes: Supplementary data
Journal Articles

Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si (111) substrate

Syed Mukulika Dinara, Saptarsi Ghosh, Sanjay Kr. Jana, Shubhankar Majumdar, Dhrubes Biswas, Sekhar Bhattacharya
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 051202 (2017)
https://doi.org/10.1116/1.4996735
Published: July 2017
View article titled, Analysis of strain induced carrier confinement with varying passivation thickness of the Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN heterostructure with graded Al<sub>x</sub>Ga<sub>1-x</sub>N buffer on Si (111) substrate
Open the PDF for Analysis of strain induced carrier confinement with varying passivation thickness of the Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN heterostructure with graded Al<sub>x</sub>Ga<sub>1-x</sub>N buffer on Si (111) substrate in another window
Journal Articles

Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels

Chin-Yen Lin, Li-Wen Wang, Kuan-Hsun Liao, Cheng-Yao Lo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 020601 (2017)
https://doi.org/10.1116/1.4974932
Published: January 2017
View article titled, Structure compensation and illumination uniformity improvement through inkjet printing in organic light-emitting diode subpixels
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Journal Articles

Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips

Gobind Basnet, James Kevin Schoelz, Peng Xu, Steven D. Barber, Matthew L. Ackerman, Paul M. Thibado
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 043201 (2013)
https://doi.org/10.1116/1.4812796
Published: July 2013
View article titled, Etch-stop method for reliably fabricating sharp yet mechanically stable scanning tunneling microscope tips
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Journal Articles

High precision dynamic alignment and gap control for optical near-field nanolithography

Xiaolei Wen, Luis M. Traverso, Pornsak Srisungsitthisunti, Xianfan Xu, Euclid E. Moon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 041601 (2013)
https://doi.org/10.1116/1.4809519
Published: June 2013
View article titled, High precision dynamic alignment and gap control for optical near-field nanolithography
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Journal Articles

Inducing a junction in n-type InxGa(1−x)N

Joshua J. Williams, Todd L. Williamson, Mark A. Hoffbauer, Alec M. Fischer, Stephen M. Goodnick, Nikolai N. Faleev, Kunal Ghosh, Christiana B. Honsberg
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C127 (2013)
https://doi.org/10.1116/1.4797489
Published: April 2013
View article titled, Inducing a junction in n-type In<sub>x</sub>Ga<sub>(1−x)</sub>N
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Journal Articles

Energy splitting of CdSe quantum dots induced by intense femtosecond laser excitation

Shengkun Zhang, Iosif Zeylikovich, Taposh Gayen, Robert Alfano, Maria Tamargo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C120 (2013)
https://doi.org/10.1116/1.4797485
Published: March 2013
View article titled, Energy splitting of CdSe quantum dots induced by intense femtosecond laser excitation
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Journal Articles

Tailoring the composition of lead zirconate titanate by atomic layer deposition

Ju H. Choi, Feng Zhang, Ya-Chuan Perng, Jane P. Chang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 012207 (2013)
https://doi.org/10.1116/1.4775789
Published: January 2013
View article titled, Tailoring the composition of lead zirconate titanate by atomic layer deposition
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Journal Articles

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Michael R. Johnson, David A. Cullen, Lu Liu, Tsung Sheng Kang, Fan Ren, Chih-Yang Chang, Stephen J. Pearton, Soohwan Jang, J. Wayne Johnson, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 062204 (2012)
https://doi.org/10.1116/1.4766303
Published: November 2012
View article titled, Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices
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Journal Articles

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, S. Porowski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 02B102 (2012)
https://doi.org/10.1116/1.3665223
Published: December 2011
View article titled, InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE
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Journal Articles

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, C. Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 03C136 (2011)
https://doi.org/10.1116/1.3590932
Published: May 2011
View article titled, Growth mechanism of InGaN by plasma assisted molecular beam epitaxy
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Journal Articles

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jinhyung Kim, Chih-Yang Chang, Erica A. Douglas, Soohwan Jang, David. J. Smith, S. J. Pearton, Wayne J. Johnson, Fan Ren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 032204 (2011)
https://doi.org/10.1116/1.3581078
Published: April 2011
View article titled, Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
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Journal Articles

Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development

M. A. Mohammad, C. Guthy, S. Evoy, S. K. Dew, M. Stepanova
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6P36–C6P41 (2010)
https://doi.org/10.1116/1.3517683
Published: December 2010
View article titled, Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development
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Journal Articles

Characterizations of nanoembossed Pb ( Zr 0.3 , Ti 0.7 ) O 3 ferroelectric films

Zhenkui Shen, Zhihui Chen, Qian Lu, Anquan Jiang, Zhijun Qiu, Xinping Qu, Yifang Chen, Ran Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6M28–C6M31 (2010)
https://doi.org/10.1116/1.3497018
Published: November 2010
View article titled, Characterizations of nanoembossed Pb ( Zr 0.3 , Ti 0.7 ) O 3 ferroelectric films
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