Page 1 | Search Results | Journal of Vacuum Science & Technology B

1-20 of 925

Sort by

Sort Order Select

Journal Articles

Resistive switching effect of HfO₂/Nb:SrTiO₃ under the influence of nanodefects and varying atmospheric conditions

Chengang Dong, Jianbo Liu, Dongqing Liu, Xiaowei Han

J. Vac. Sci. Technol. B 43, 022214 (2025)

https://doi.org/10.1116/6.0004231

Published: March 2025

View article titled, Resistive switching effect of HfO2/Nb:SrTiO3 under the influence of nanodefects and varying atmospheric conditions

Journal Articles

Study of the impact of electrode surface roughness on the field-emission properties of solid-state structures with a nanoscale vacuum gap

Gleb D. Demin, Iliya D. Evsikov, Bogdan V. Lobanov, Nikolay A. Djuzhev

J. Vac. Sci. Technol. B 43, 023205 (2025)

https://doi.org/10.1116/6.0004226

Published: March 2025

View article titled, Study of the impact of electrode surface roughness on the field-emission properties of solid-state structures with a nanoscale vacuum gap

Journal Articles

Overcoming challenges in single electron charge detection of nanoscale dipoles

Mohammad Istiaque Rahaman, R. A. McManus, D. J. Noronha, G. P. Szakmany, A. O. Orlov, G. L. Snider

J. Vac. Sci. Technol. B 42, 063208 (2024)

https://doi.org/10.1116/6.0004052

Published: December 2024

View article titled, Overcoming challenges in single electron charge detection of nanoscale dipoles

Journal Articles

Comparative studies of metamorphic and strained InGaAs p-type semiconductor - intrinsic absorption layer - n-type semiconductor photodetector for low-temperature CH₄ detection

Xueting Du, Kai Niu, Wei Mi, Di Wang, Yan Zhu, Lin’an He, Liwei Zhou, Juan Wang, Xingcheng Zhang, Jinshi Zhao

J. Vac. Sci. Technol. B 42, 062207 (2024)

https://doi.org/10.1116/6.0004069

Published: November 2024

View article titled, Comparative studies of metamorphic and strained InGaAs p-type semiconductor - intrinsic absorption layer - n-type semiconductor photodetector for low-temperature CH4 detection

Journal Articles

Engineering of ZrO₂-based RRAM devices for low power in-memory computing

Aseel Zeinati, Durga Misra, Dina H. Triyoso, Kandabara Tapily, Robert D. Clark, Sarah Lombardo, Cory S. Wajda, Gert J. Leusink

J. Vac. Sci. Technol. B 42, 063207 (2024)

https://doi.org/10.1116/6.0004007

Published: November 2024

View article titled, Engineering of ZrO2-based RRAM devices for low power in-memory computing

Journal Articles

Current–voltage characteristics of Ag/Nb:SrTiO₃/Ag and Au/Nb:SrTiO₃/Ag heterostructures

Weibai Bian, Chen Han, Jiqiang Jia, Xiaoqin Liu

J. Vac. Sci. Technol. B 42, 054005 (2024)

https://doi.org/10.1116/6.0003843

Published: September 2024

View article titled, Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures

Journal Articles

Magneto-transport study on Sn-rich Sn_1−xGe_x thin films enabled by CdTe buffer layer

Rabindra Basnet, Dinesh Upreti, Tyler T. McCarthy, Zheng Ju, Allison M. McMinn, M. M. Sharma, Yong-Hang Zhang, Jin Hu

J. Vac. Sci. Technol. B 42, 042210 (2024)

https://doi.org/10.1116/6.0003564

Published: July 2024

View article titled, Magneto-transport study on Sn-rich Sn1−xGex thin films enabled by CdTe buffer layer

Journal Articles

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Hryhorii Stanchu, Grey Abernathy, Joshua Grant, Fernando M. de Oliveira, Yuriy I. Mazur, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu

J. Vac. Sci. Technol. B 42, 042802 (2024)

https://doi.org/10.1116/6.0003734

Published: July 2024

View article titled, Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Journal Articles

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Haochen Zhao, Suho Park, Guangyang Lin, Yuying Zhang, Tuofu Zhama, Chandan Samanta, Lorry Chang, Xiaofeng Zhu, Xu Feng, Kevin O. Díaz-Aponte, Lin Cong, Yuping Zeng

J. Vac. Sci. Technol. B 42, 042205 (2024)

https://doi.org/10.1116/6.0003561

Published: June 2024

View article titled, Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Includes: Supplementary data

Journal Articles

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi_0.5Sb_1.5Te₃ thin films

Ding Hu, Shaojun Liang, Yichun He, Rensheng Zhang, Song Yue

J. Vac. Sci. Technol. B 42, 032212 (2024)

https://doi.org/10.1116/6.0003631

Published: May 2024

View article titled, Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Includes: Supplementary data

Journal Articles

Group-IV based pin photodetectors for C-band application

Michael Oehme, Maurice Wanitzek, Christian Spieth, Lukas Seidel, Michael Hack, Erich Kasper, Daniel Schwarz

J. Vac. Sci. Technol. B 42, 033202 (2024)

https://doi.org/10.1116/6.0003556

Published: April 2024

View article titled, Group-IV based pin photodetectors for C-band application

Journal Articles

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

J. Vac. Sci. Technol. B 42, 032207 (2024)

https://doi.org/10.1116/6.0003502

Published: April 2024

View article titled, Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal Articles

New method of fabrication of suspended metallic single electron transistor (SET)

Mohammad Istiaque Rahaman, G. P. Szakmany, A. O. Orlov, G. L. Snider

J. Vac. Sci. Technol. B 42, 013201 (2024)

https://doi.org/10.1116/6.0003025

Published: January 2024

View article titled, New method of fabrication of suspended metallic single electron transistor (SET)

Journal Articles

Optical properties of copper oxide thin films implanted with chromium ions

Katarzyna Ungeheuer, Konstanty W. Marszalek

J. Vac. Sci. Technol. B 41, 062208 (2023)

https://doi.org/10.1116/6.0003135

Published: December 2023

View article titled, Optical properties of copper oxide thin films implanted with chromium ions

Journal Articles

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Amir Sohrabi-Movahed, Ali Asghar Orouji

J. Vac. Sci. Technol. B 41, 063201 (2023)

https://doi.org/10.1116/6.0002971

Published: November 2023

View article titled, 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Journal Articles

Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics

Yuan Xiao Ma, Hui Su, Wing Man Tang, Pui To Lai

J. Vac. Sci. Technol. B 41, 060804 (2023)

https://doi.org/10.1116/5.0156557

Published: November 2023

View article titled, Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics

Journal Articles

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi

J. Vac. Sci. Technol. B 41, 052206 (2023)

https://doi.org/10.1116/6.0002577

Published: September 2023

View article titled, Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Journal Articles

Barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films

J. K. L. Peters, G. D. Ashby, H. D. Hallen

J. Vac. Sci. Technol. B 41, 042209 (2023)

https://doi.org/10.1116/6.0002519

Published: July 2023

View article titled, Barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films

Journal Articles

Electron transport in macroscopic borosilicate capillaries with bending angles of 90° and 360°

Hai-Dang Nguyen, Jan-Philipp Wulfkühler, Martin Tajmar

J. Vac. Sci. Technol. B 41, 034203 (2023)

https://doi.org/10.1116/6.0002281

Published: May 2023

View article titled, Electron transport in macroscopic borosilicate capillaries with bending angles of 90° and 360°

Journal Articles

Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces

Yuki Akura, Masaki Shimofuri, Amit Banerjee, Jun Hirotani, Toshiyuki Tsuchiya

J. Vac. Sci. Technol. B 41, 022805 (2023)

https://doi.org/10.1116/6.0002456

Published: March 2023

View article titled, Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces

NARROW

Topics

Resistive switching effect of HfO₂/Nb:SrTiO₃ under the influence of nanodefects and varying atmospheric conditions

Study of the impact of electrode surface roughness on the field-emission properties of solid-state structures with a nanoscale vacuum gap

Overcoming challenges in single electron charge detection of nanoscale dipoles

Comparative studies of metamorphic and strained InGaAs p-type semiconductor - intrinsic absorption layer - n-type semiconductor photodetector for low-temperature CH₄ detection

Engineering of ZrO₂-based RRAM devices for low power in-memory computing

Current–voltage characteristics of Ag/Nb:SrTiO₃/Ag and Au/Nb:SrTiO₃/Ag heterostructures

Magneto-transport study on Sn-rich Sn_1−xGe_x thin films enabled by CdTe buffer layer

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi_0.5Sb_1.5Te₃ thin films

Group-IV based pin photodetectors for C-band application

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

New method of fabrication of suspended metallic single electron transistor (SET)

Optical properties of copper oxide thin films implanted with chromium ions

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Review on remote phonon scattering in transistors with metal-oxide-semiconductor structures adopting high-k gate dielectrics

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

Barrier/seed system for electroless metallization on complex surfaces using (aminomethylaminoethyl)phenethyltrimethoxysilane self-assembled films

Electron transport in macroscopic borosilicate capillaries with bending angles of 90° and 360°

Gap distance dependence on field emission at the nanogap between silicon cleavage surfaces

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only