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Journal Articles

Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range

Abdulmecit Turut

J. Vac. Sci. Technol. B 42, 062201 (2024)

https://doi.org/10.1116/6.0003898

Published: October 2024

View article titled, Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range

Journal Articles

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Yu-Xi Zhou, Jie-Jie Zhu, Jing-Shu Guo, Ling-Jie Qin, Bo-Wen Zhang, Meng-Di Li, Ming-Chen Zhang, Xiao-Hua Ma

J. Vac. Sci. Technol. B 42, 052201 (2024)

https://doi.org/10.1116/6.0003690

Published: August 2024

View article titled, Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Journal Articles

Enhanced contact resistance reduction in MoS₂ transistors via ultrathin LiPON electrode interface doping

Ting Pan, Yonghuang Wu, Run Shi, Haowen Liu, Ruoyu Tong, Ruixuan Peng, Bochen Zhao, Kai Liu, Yuegang Zhang

J. Vac. Sci. Technol. B 42, 042803 (2024)

https://doi.org/10.1116/5.0215419

Published: July 2024

View article titled, Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Journal Articles

Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory

Farzaneh Safdarian, Farzad Ahmadian, Rohollah Zare Hasan Abad, Hojat Allah Badehian

J. Vac. Sci. Technol. B 42, 042201 (2024)

https://doi.org/10.1116/6.0003635

Published: May 2024

View article titled, Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory

Journal Articles

Effects of graphene doping and gas adsorption on the peak positions of graphene plasmon resonance and adsorbate infrared absorption

Jongpil Ye

J. Vac. Sci. Technol. B 42, 032803 (2024)

https://doi.org/10.1116/6.0003588

Published: May 2024

View article titled, Effects of graphene doping and gas adsorption on the peak positions of graphene plasmon resonance and adsorbate infrared absorption

Includes: Supplementary data

Journal Articles

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

J. Vac. Sci. Technol. B 42, 032207 (2024)

https://doi.org/10.1116/6.0003502

Published: April 2024

View article titled, Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal Articles

High current field emission from Si nanowires on pillar structures

Philipp Buchner, Matthias Hausladen, Mathias Bartl, Michael Bachmann, Rupert Schreiner

J. Vac. Sci. Technol. B 42, 022208 (2024)

https://doi.org/10.1116/6.0003384

Published: February 2024

View article titled, High current field emission from Si nanowires on pillar structures

Journal Articles

Plasma-assisted annealing of Pt-doped rutile TiO₂ nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Retsuo Kawakami, Yuta Makino, Shin-ichiro Yanagiya, Akihiro Shirai, Masahito Niibe, Yoshitaka Nakano

J. Vac. Sci. Technol. B 42, 012203 (2024)

https://doi.org/10.1116/6.0003101

Published: January 2024

View article titled, Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Journal Articles

Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

Nathalie Lander Gower, Shiran Levy, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo

J. Vac. Sci. Technol. B 42, 010801 (2024)

https://doi.org/10.1116/6.0003160

Published: January 2024

View article titled, Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

Journal Articles

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Simran Shahi, Asma Ahmed, Ruizhe Yang, Anthony Cabanillas, Anindita Chakravarty, Maomao Liu, Hemendra Nath Jaiswal, Yu Fu, Yutong Guo, Satyajeetsinh Shaileshsin Jadeja, Hariharan Murugesan, Anthony Butler, Chu Te Chen, Joel Muhigirwa, Mohamed Enaitalla, Jun Liu, Fei Yao, Huamin Li

J. Vac. Sci. Technol. B 41, 053202 (2023)

https://doi.org/10.1116/6.0002888

Published: August 2023

View article titled, Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Includes: Supplementary data

Journal Articles

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

D. S. Rosenzweig, M. Schnedler, R. E. Dunin-Borkowski, Ph. Ebert, H. Eisele

J. Vac. Sci. Technol. B 41, 044202 (2023)

https://doi.org/10.1116/6.0002733

Published: May 2023

View article titled, Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

Journal Articles

Physical vapor deposition of Yb-doped Cs₂AgSbBr₆ films

Yukun Liu, Minh N. Tran, Iver J. Cleveland, Eray S. Aydil

J. Vac. Sci. Technol. B 41, 022206 (2023)

https://doi.org/10.1116/6.0002475

Published: March 2023

View article titled, Physical vapor deposition of Yb-doped Cs2AgSbBr6 films

Includes: Supplementary data

Journal Articles

Designing MoS₂ channel properties for analog memory in neuromorphic applications

Vladislav Kurtash, Sebastian Thiele, Sobin Mathew, Heiko O. Jacobs, Joerg Pezoldt

J. Vac. Sci. Technol. B 40, 030602 (2022)

https://doi.org/10.1116/6.0001815

Published: April 2022

View article titled, Designing MoS2 channel properties for analog memory in neuromorphic applications

Journal Articles

Origin of the current saturation level of p-doped silicon field emitters

Simon Edler, Andreas Schels, Florian Herdl, Walter Hansch, Michael Bachmann, Markus Dudeck, Felix Düsberg, Andreas Pahlke, Matthias Hausladen, Philipp Buchner, Rupert Schreiner

J. Vac. Sci. Technol. B 40, 013203 (2022)

https://doi.org/10.1116/6.0001554

Published: December 2021

View article titled, Origin of the current saturation level of p-doped silicon field emitters

Journal Articles

Rare earth doped CaWO₄ and CaMoO₄ thin films for white light emission

Puneet Kaur, Atul Khanna, Jatinder Kaur, Rinku Kumar, Ramesh Chandra

J. Vac. Sci. Technol. B 39, 012205 (2021)

https://doi.org/10.1116/6.0000610

Published: January 2021

View article titled, Rare earth doped CaWO4 and CaMoO4 thin films for white light emission

Includes: Supplementary data

Journal Articles

Evidence of improved power conversion efficiency in lead-free CsGeI₃ based perovskite solar cell heterostructure via scaps simulation

Abhishek Raj, Manish Kumar, Hemant Bherwani, Ankit Gupta, Avneesh Anshul

J. Vac. Sci. Technol. B 39, 012401 (2021)

https://doi.org/10.1116/6.0000718

Published: December 2020

View article titled, Evidence of improved power conversion efficiency in lead-free CsGeI3 based perovskite solar cell heterostructure via <sc>scaps</sc> simulation

Includes: Supplementary data

Journal Articles

Effect of oxygen vacancy gradient on ion-irradiated Ca-doped YMnO₃ thin films

Kunalsinh N. Rathod, Keval Gadani, Davit Dhruv, Vipul G. Shrimali, Sapana Solanki, Ashvini D. Joshi, Jitendra P. Singh, Keun H. Chae, Kandasami Asokan, Piyush S. Solanki, Nikesh A. Shah

J. Vac. Sci. Technol. B 38, 062208 (2020)

https://doi.org/10.1116/6.0000507

Published: November 2020

View article titled, Effect of oxygen vacancy gradient on ion-irradiated Ca-doped YMnO3 thin films

Journal Articles

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Chunyu Zhao, Xu Zhang, Chak Wah Tang, Jiannong Wang, Kei May Lau

J. Vac. Sci. Technol. B 38, 060602 (2020)

https://doi.org/10.1116/6.0000527

Published: October 2020

View article titled, Selective lateral photoelectrochemical wet etching of InGaN nanorods

Journal Articles

Synthesis of TiN/N-doped TiO₂ composite films as visible light active photocatalyst

Glenson R. Panghulan, Magdaleno R. Vasquez, Jr., Yasmin D. Edañol, Narong Chanlek, Leon M. Payawan, Jr.

J. Vac. Sci. Technol. B 38, 062203 (2020)

https://doi.org/10.1116/6.0000304

Published: October 2020

View article titled, Synthesis of TiN/N-doped TiO2 composite films as visible light active photocatalyst

Journal Articles

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

Makoto Miyoshi, Taiki Nakabayashi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi

J. Vac. Sci. Technol. B 38, 052205 (2020)

https://doi.org/10.1116/6.0000284

Published: September 2020

View article titled, Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

NARROW

Topics

Numerical analysis of Gaussian potential patches model depending on the substrate doping in inhomogeneous Schottky barrier diodes over a wide temperature range

Study on geometry-dependent n⁺-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application

Enhanced contact resistance reduction in MoS₂ transistors via ultrathin LiPON electrode interface doping

Electronic and optical properties of lithium-doped boron nitride nanoribbons using density functional theory

Effects of graphene doping and gas adsorption on the peak positions of graphene plasmon resonance and adsorbate infrared absorption

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

High current field emission from Si nanowires on pillar structures

Plasma-assisted annealing of Pt-doped rutile TiO₂ nanoparticles for enhanced decomposition and bacterial inactivation under general lighting

Doping engineering: Next step toward room temperature performance of terahertz quantum cascade lasers

Plasma-induced energy band evolution for two-dimensional heterogeneous anti-ambipolar transistors

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

Physical vapor deposition of Yb-doped Cs₂AgSbBr₆ films

Designing MoS₂ channel properties for analog memory in neuromorphic applications

Origin of the current saturation level of p-doped silicon field emitters

Rare earth doped CaWO₄ and CaMoO₄ thin films for white light emission

Evidence of improved power conversion efficiency in lead-free CsGeI₃ based perovskite solar cell heterostructure via scaps simulation

Effect of oxygen vacancy gradient on ion-irradiated Ca-doped YMnO₃ thin films

Selective lateral photoelectrochemical wet etching of InGaN nanorods

Synthesis of TiN/N-doped TiO₂ composite films as visible light active photocatalyst

Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition

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