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Journal Articles

5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

B. Petrović, A. Bader, J. Nauschütz, T. Sato, S. Birner, R. Weih, F. Hartmann, S. Höfling

J. Vac. Sci. Technol. B 42, 043202 (2024)

https://doi.org/10.1116/6.0003584

Published: June 2024

View article titled, 5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Journal Articles

Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga₂O₃ Schottky barrier diode

Hoon-Ki Lee, V. Janardhanam, Woojin Chang, Kyujun Cho, Chel-Jong Choi, Jae Kyoung Mun

J. Vac. Sci. Technol. B 42, 042204 (2024)

https://doi.org/10.1116/6.0003608

Published: June 2024

View article titled, Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode

Journal Articles

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi_0.5Sb_1.5Te₃ thin films

Ding Hu, Shaojun Liang, Yichun He, Rensheng Zhang, Song Yue

J. Vac. Sci. Technol. B 42, 032212 (2024)

https://doi.org/10.1116/6.0003631

Published: May 2024

View article titled, Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Includes: Supplementary data

Journal Articles

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Xiaole Jia, Yibo Wang, Cizhe Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

J. Vac. Sci. Technol. B 42, 032207 (2024)

https://doi.org/10.1116/6.0003502

Published: April 2024

View article titled, Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Journal Articles

Novel wet transfer technology of manufacturing flexible suspended two-dimensional material devices

Yingtao Wang, Mona Savalia, Xian Zhang

J. Vac. Sci. Technol. B 41, 062810 (2023)

https://doi.org/10.1116/6.0003087

Published: December 2023

View article titled, Novel wet transfer technology of manufacturing flexible suspended two-dimensional material devices

Journal Articles

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Amir Sohrabi-Movahed, Ali Asghar Orouji

J. Vac. Sci. Technol. B 41, 063201 (2023)

https://doi.org/10.1116/6.0002971

Published: November 2023

View article titled, 4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Journal Articles

Theoretical prediction of mechanical, thermodynamic, and surface oxygen adsorption properties of anti-perovskite Ti₃AC (A = Tl and Al) ceramics for thermal barrier coating materials

Diyou Jiang, Wei Hu, Haiqing Wan, Sanqiu Liu

J. Vac. Sci. Technol. B 41, 042207 (2023)

https://doi.org/10.1116/6.0002623

Published: June 2023

View article titled, Theoretical prediction of mechanical, thermodynamic, and surface oxygen adsorption properties of anti-perovskite Ti3AC (A = Tl and Al) ceramics for thermal barrier coating materials

Journal Articles

Forward bias degradation and thermal simulations of vertical geometry β-Ga₂O₃ Schottky rectifiers

Minghan Xian, Randy Elhassani, Chaker Fares, Fan Ren, Marko Tadjer, S. J. Pearton

J. Vac. Sci. Technol. B 37, 061205 (2019)

https://doi.org/10.1116/1.5127511

Published: October 2019

View article titled, Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers

Journal Articles

Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

Sandeep Sohal, Madhavie Edirisooriya, Thomas Myers, Mark Holtz

J. Vac. Sci. Technol. B 36, 052905 (2018)

https://doi.org/10.1116/1.5048526

Published: September 2018

View article titled, Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

Includes: Supplementary data

Journal Articles

Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi₂Te₃/Ni and Ni/Sb₂Te₃/Ni thin films

Satilmis Budak, Zhigang Xiao, Jorden Cole, Dennis Price, Tyler Davis, Tiara Strong, Mohammad A. Alim

J. Vac. Sci. Technol. B 35, 051401 (2017)

https://doi.org/10.1116/1.5001046

Published: September 2017

View article titled, Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi2Te3/Ni and Ni/Sb2Te3/Ni thin films

Journal Articles

Economical rotatable holder for magnetotransport measurements

Avyaya J. Narasimham, Daniel Pennock, Graham J. Potter, Brian Taylor, Vincent P. LaBella

J. Vac. Sci. Technol. B 35, 023201 (2017)

https://doi.org/10.1116/1.4974488

Published: January 2017

View article titled, Economical rotatable holder for magnetotransport measurements

Journal Articles

Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

Fatemeh Rezaeifar, Rehan Kapadia

J. Vac. Sci. Technol. B 34, 041228 (2016)

https://doi.org/10.1116/1.4955190

Published: July 2016

View article titled, Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

Includes: Supplementary data

Journal Articles

Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Kai-Di Mai, Hsuan-Ling Kao, Chien-Kai Tung, Tsung-Cheng Chang, Schang-jing Hon, Jia-Ching Lin, Kuo-Jen Chang, Yi-Cheng Cheng

J. Vac. Sci. Technol. B 34, 021205 (2016)

https://doi.org/10.1116/1.4943573

Published: March 2016

View article titled, Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Journal Articles

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Namig Hasanov, Binbin Zhu, Vijay Kumar Sharma, Shunpeng Lu, Yiping Zhang, Wei Liu, Swee Tiam Tan, Xiao Wei Sun, Hilmi Volkan Demir

J. Vac. Sci. Technol. B 34, 011209 (2016)

https://doi.org/10.1116/1.4939186

Published: December 2015

View article titled, Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Journal Articles

Channel temperature measurements of In_xAl_1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Lwin Min Kyaw, Lakshmi Kanta Bera, Thirumaleshwara N. Bhat, Yi Liu, Hui Ru Tan, Surani Bin Dolmanan, Eng Fong Chor, Sudhiranjan Tripathy

J. Vac. Sci. Technol. B 33, 051203 (2015)

https://doi.org/10.1116/1.4927366

Published: July 2015

View article titled, Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Journal Articles

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Shihyun Ahn, Weidi Zhu, Chen Dong, Lingcong Le, Ya-Hsi Hwang, Byung-Jae Kim, Fan Ren, Stephen J. Pearton, Aaron G. Lind, Kevin S. Jones, I. I. Kravchenko, Ming-Lan Zhang

J. Vac. Sci. Technol. B 33, 031210 (2015)

https://doi.org/10.1116/1.4918715

Published: April 2015

View article titled, Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Journal Articles

Mechanical strain mediated carrier scattering and its role in charge and thermal transport in freestanding nanocrystalline aluminum thin films

Sandeep Kumar, Davil Garcia, Jiezhu Jin, Aman Haque

J. Vac. Sci. Technol. B 33, 022002 (2015)

https://doi.org/10.1116/1.4906834

Published: February 2015

View article titled, Mechanical strain mediated carrier scattering and its role in charge and thermal transport in freestanding nanocrystalline aluminum thin films

Journal Articles

Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Ya-Hsi Hwang, Tsung-Sheng Kang, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. B 32, 061202 (2014)

https://doi.org/10.1116/1.4896593

Published: October 2014

View article titled, Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Journal Articles

Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Travis Anderson, Andrew Koehler, Ya-Hsi Hwang, Yueh-Ling Hsieh, Shun Li, Fan Ren, Jerry Wayne Johnson, Stephen J. Pearton

J. Vac. Sci. Technol. B 32, 051203 (2014)

https://doi.org/10.1116/1.4891629

Published: July 2014

View article titled, Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Journal Articles

Surface-patterned micromechanical elements by polymer injection molding with hybrid molds

Helmut Schift, Prabitha Urwyler, Per Magnus Kristiansen

J. Vac. Sci. Technol. B 31, 06FD01 (2013)

https://doi.org/10.1116/1.4821649

Published: September 2013

View article titled, Surface-patterned micromechanical elements by polymer injection molding with hybrid molds

NARROW

Topics

5.0 μm emitting interband cascade lasers with superlattice and bulk AlGaAsSb claddings

Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga₂O₃ Schottky barrier diode

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi_0.5Sb_1.5Te₃ thin films

Characteristics of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ dual-metal gate modulation-doped field-effect transistors simulated by TCAD

Novel wet transfer technology of manufacturing flexible suspended two-dimensional material devices

4H-SiC layer with multiple trenches in lateral double-diffused metal-oxide-semiconductor transistors for high temperature and high voltage applications

Theoretical prediction of mechanical, thermodynamic, and surface oxygen adsorption properties of anti-perovskite Ti₃AC (A = Tl and Al) ceramics for thermal barrier coating materials

Forward bias degradation and thermal simulations of vertical geometry β-Ga₂O₃ Schottky rectifiers

Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

Thermoelectric and optical properties of advanced thermoelectric devices from Ni/Bi₂Te₃/Ni and Ni/Sb₂Te₃/Ni thin films

Economical rotatable holder for magnetotransport measurements

Efficient and ultrafast optical modulation of on-chip thermionic emission using resonant cavity coupled electron emitters

Normally-off matrix layout p-GaN gate AlGaN/GaN power HEMT with a through-substrate via process

Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts

Channel temperature measurements of In_xAl_1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Mechanical strain mediated carrier scattering and its role in charge and thermal transport in freestanding nanocrystalline aluminum thin films

Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area

Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors

Surface-patterned micromechanical elements by polymer injection molding with hybrid molds

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