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Journal Articles

Theory of graphene–insulator–graphene tunnel junctions

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Sergio C. de la Barrera, Qin Gao, Randall M. Feenstra
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 04E101 (2014)
https://doi.org/10.1116/1.4871760
Published: April 2014
View articletitled, Theory of graphene–insulator–graphene tunnel junctions
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Journal Articles

Direct measurement of quasiparticle lifetimes in graphene using time-resolved photoemission

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Steve Gilbertson, Tomasz Durakiewicz, Jian-Xin Zhu, Aditya D. Mohite, Andrew Dattelbaum, George Rodriguez
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 03D116 (2012)
https://doi.org/10.1116/1.4715440
Published: May 2012
View articletitled, Direct measurement of quasiparticle lifetimes in graphene using time-resolved photoemission
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Journal Articles

Optical-absorption spectra of single-layer graphene in a periodic magnetic field

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Y. H. Chiu, Y. C. Ou, Y. Y. Liao, M. F. Lin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 386–390 (2010)
https://doi.org/10.1116/1.3359600
Published: March 2010
View articletitled, Optical-absorption spectra of single-layer graphene in a periodic magnetic field
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Journal Articles

Quantum electron transport through carbon nanotubes with electron-phonon coupling

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Hiroyuki Ishii, Nobuhiko Kobayashi, Kenji Hirose
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 882–886 (2009)
https://doi.org/10.1116/1.3100658
Published: March 2009
View articletitled, Quantum electron transport through carbon nanotubes with electron-phonon coupling
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Journal Articles

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

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Raseong Kim, Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck, Mark S. Lundstrom
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1628–1631 (2008)
https://doi.org/10.1116/1.2908442
Published: August 2008
View articletitled, Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors
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Journal Articles

Band structures of double-walled carbon nanotubes

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Y. H. Ho, G. W. Ho, S. J. Wu, M. F. Lin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1098–1103 (2006)
https://doi.org/10.1116/1.2188409
Published: April 2006
View articletitled, Band structures of double-walled carbon nanotubes
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Journal Articles

Magnetoplasmons in a pair of armchair carbon nanotubes

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C. H. Lee, C. W. Chiu, F. L. Shyu, M. F. Lin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 2266–2271 (2005)
https://doi.org/10.1116/1.2083928
Published: October 2005
View articletitled, Magnetoplasmons in a pair of armchair carbon nanotubes
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Journal Articles

Stability of irradiation-induced point defects on walls of carbon nanotubes

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A. V. Krasheninnikov, K. Nordlund
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 728–733 (2002)
https://doi.org/10.1116/1.1463728
Published: April 2002
View articletitled, Stability of irradiation-induced point defects on walls of carbon nanotubes
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Journal Articles

Electronic properties of ideal and interface‐modified metal‐semiconductor interfaces

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Winfried Mönch
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 2985–2993 (1996)
https://doi.org/10.1116/1.588947
Published: July 1996
View articletitled, Electronic properties of ideal and interface‐modified metal‐semiconductor interfaces
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Journal Articles

Calculation of local density of states at an atomically sharp Si tip

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Z.‐H. Huang, P. H. Cutler, N. M. Miskovsky, T. E. Sullivan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 522–525 (1995)
https://doi.org/10.1116/1.588346
Published: March 1995
View articletitled, Calculation of local density of states at an atomically sharp Si tip
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Journal Articles

Effect of surface reconstruction on Fermi‐level pinning in the Sn on Si(111) system

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C. L. Griffiths, H. T. Anyele, C. C. Matthai, A. A. Cafolla, R. H. Williams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 11, 1559–1563 (1993)
https://doi.org/10.1116/1.586969
Published: July 1993
View articletitled, Effect of surface reconstruction on Fermi‐level pinning in the Sn on Si(111) system
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Journal Articles

Electronic structure of samarium atoms adsorbed on the GaAs(110) surface

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G. Allan, C. Delerue
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 10, 1928–1931 (1992)
https://doi.org/10.1116/1.586160
Published: July 1992
View articletitled, Electronic structure of samarium atoms adsorbed on the GaAs(110) surface
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Journal Articles

Effect of interface composition on the band offsets at InAs/AlSb (001) heterojunctions

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J. R. Waldrop, G. J. Sullivan, R. W. Grant, E. A. Kraut, W. A. Harrison
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 10, 1773–1778 (1992)
https://doi.org/10.1116/1.586239
Published: July 1992
View articletitled, Effect of interface composition on the band offsets at InAs/AlSb (001) heterojunctions
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Journal Articles

The metal adatom on GaAs(110): A surface negative U center

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G. Allan, M. Lannoo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 9, 2135–2139 (1991)
https://doi.org/10.1116/1.585752
Published: July 1991
View articletitled, The metal adatom on GaAs(110): A surface negative U center
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Journal Articles

Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces

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Yia‐Chung Chang, D. E. Aspnes
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 896–899 (1990)
https://doi.org/10.1116/1.584984
Published: July 1990
View articletitled, Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces
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Journal Articles

Electronic structure of sodium atoms adsorbed on the GaAs(110) surface

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G. Allan, M. Lannoo, C. Priester
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 980–984 (1990)
https://doi.org/10.1116/1.584952
Published: July 1990
View articletitled, Electronic structure of sodium atoms adsorbed on the GaAs(110) surface
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Journal Articles

Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular‐beam epitaxy growth

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D. E. Aspnes, A. A. Studna, L. T. Florez, Y. C. Chang, J. P. Harbison, M. K. Kelly, H. H. Farrell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 7, 901–906 (1989)
https://doi.org/10.1116/1.584577
Published: July 1989
View articletitled, Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular‐beam epitaxy growth
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Journal Articles

Properties of HgTe–Hg0.15Cd0.85Te superlattices grown by molecular‐beam epitaxy

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Y. Lansari, J. W. Han, S. Hwang, L. S. Kim, J. W. Cook, Jr., J. F. Schetzina, J. N. Schulman, N. Otsuka
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 7, 241–243 (1989)
https://doi.org/10.1116/1.584725
Published: March 1989
View articletitled, Properties of HgTe–Hg0.15Cd0.85Te superlattices grown by molecular‐beam epitaxy
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Journal Articles

Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds

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C. B. Duke, Y. R. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 6, 1440–1443 (1988)
https://doi.org/10.1116/1.584237
Published: July 1988
View articletitled, Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds
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Journal Articles

‘‘Pinning’’ of energy levels of transition‐metal impurities

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J. Tersoff, Walter A. Harrison
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 5, 1221–1224 (1987)
https://doi.org/10.1116/1.583715
Published: July 1987
View articletitled, ‘‘Pinning’’ of energy levels of transition‐metal impurities
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