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Journal Articles

Epitaxial SiGeSn grown on Si by ion implantation

Chinenye U. Ekeruche, Mikayla Davila, Peter J. Simpson, Karen L. Kavanagh, Lyudmila V. Goncharova
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 062206 (2024)
https://doi.org/10.1116/6.0003933
Published: November 2024
View article titled, Epitaxial SiGeSn grown on Si by ion implantation
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Journal Articles

Phosphorus deactivation by hydrogen on hot carrier stressed high-voltage N-channel field effect transistor CMOS device demonstrated by scanning capacitance microscopy imaging

Jochonia Nxumalo, Wang Yun-Yu (王允愈), Mike Smith, You Lin (尤林), David Fillmore, Matthew Gerber, Jin Qiang (金强)
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 042203 (2023)
https://doi.org/10.1116/5.0147443
Published: June 2023
View article titled, Phosphorus deactivation by hydrogen on hot carrier stressed high-voltage N-channel field effect transistor CMOS device demonstrated by scanning capacitance microscopy imaging
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Journal Articles

ToF-SIMS analysis of ion implanted standard to quantify insecticide in mosquito netting with cesium and argon gas cluster sputtering beams

Chuanzhen Zhou, Fred A. Stevie, Stephen C. Smith, Derk Rading, Julia Zakel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 03F111 (2018)
https://doi.org/10.1116/1.5011751
Published: February 2018
View article titled, ToF-SIMS analysis of ion implanted standard to quantify insecticide in mosquito netting with cesium and argon gas cluster sputtering beams
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Journal Articles

ToF-SIMS quantification of bromine based insecticide in mosquito netting

Chuanzhen Zhou, Fred A. Stevie, Stephen C. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 031802 (2017)
https://doi.org/10.1116/1.4983098
Published: May 2017
View article titled, ToF-SIMS quantification of bromine based insecticide in mosquito netting
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Journal Articles

Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga

Editor’s Pick
Hermann Detz, Martin Kriz, Suzanne Lancaster, Donald MacFarland, Markus Schinnerl, Tobias Zederbauer, Aaron Maxwell Andrews, Werner Schrenk, Gottfried Strasser
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 011803 (2017)
https://doi.org/10.1116/1.4973340
Published: January 2017
View article titled, Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga
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Journal Articles

Tilted ion implantation as a cost-efficient sublithographic patterning technique

Sang Wan Kim, Peng Zheng, Kimihiko Kato, Leonard Rubin, Tsu-Jae King Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 040608 (2016)
https://doi.org/10.1116/1.4953085
Published: June 2016
View article titled, Tilted ion implantation as a cost-efficient sublithographic patterning technique
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Journal Articles

Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors

Shihyun Ahn, Yi-Hsuan Lin, Fan Ren, Sooyeoun Oh, Younghun Jung, Gwangseok Yang, Jihyun Kim, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 041213 (2016)
https://doi.org/10.1116/1.4950872
Published: May 2016
View article titled, Effect of 5 MeV proton irradiation damage on performance of β-Ga<sub>2</sub>O<sub>3</sub> photodetectors
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Journal Articles

Comparison of SIMS and RBS for depth profiling of silica glasses implanted with metal ions

Jan Lorinčík, Daniela Veselá, Soňa Vytykáčová, Blanka Švecová, Pavla Nekvindová, Anna Macková, Romana Mikšová, Petr Malinský, Roman Böttger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 03H129 (2016)
https://doi.org/10.1116/1.4944525
Published: March 2016
View article titled, Comparison of SIMS and RBS for depth profiling of silica glasses implanted with metal ions
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Journal Articles

Method for quantification of insecticide in mosquito netting using ion implantation and ToF-SIMS analysis

Chuanzhen Zhou, Fred A. Stevie, Stephen C. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 03H107 (2016)
https://doi.org/10.1116/1.4940394
Published: January 2016
View article titled, Method for quantification of insecticide in mosquito netting using ion implantation and ToF-SIMS analysis
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Journal Articles

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

Aaron G. Lind, Henry L. Aldridge, Jr., Kevin S. Jones, Christopher Hatem
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051217 (2015)
https://doi.org/10.1116/1.4931030
Published: September 2015
View article titled, Co-implantation of Al<sup>+</sup>, P<sup>+</sup>, and S<sup>+</sup> with Si<sup>+</sup> implants into In<sub>0.53</sub>Ga<sub>0.47</sub>As
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Journal Articles

Probe current distribution characterization technique for focused ion beam

Shida Tan, Richard Livengood, Yuval Greenzweig, Yariv Drezner, Darryl Shima
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 06F606 (2012)
https://doi.org/10.1116/1.4766882
Published: November 2012
View article titled, Probe current distribution characterization technique for focused ion beam
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Journal Articles

Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A804 (2011)
https://doi.org/10.1116/1.3520647
Published: January 2011
View article titled, Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors
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Journal Articles

Ga + beam lithography for suspended lateral beams and nanowires

M. David Henry, Michael Shearn, Axel Scherer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6F26–C6F30 (2010)
https://doi.org/10.1116/1.3497013
Published: December 2010
View article titled, Ga + beam lithography for suspended lateral beams and nanowires
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Journal Articles

Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates

Ruey-Dar Chang, Chia-Chi Ma, Jung-Ruey Tsai
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1158–1163 (2010)
https://doi.org/10.1116/1.3499648
Published: October 2010
View article titled, Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates
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Journal Articles

Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon

C. Penley, F. A. Stevie, D. P. Griffis, S. Siebel, L. Kulig, J. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 511–516 (2010)
https://doi.org/10.1116/1.3406141
Published: April 2010
View article titled, Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon
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Journal Articles

Exploring doping options and variability of trigate transistors using atomistic process and device simulations

Ignacio Martin-Bragado, Victor Moroz, Munkang Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1H1–C1H4 (2010)
https://doi.org/10.1116/1.3248263
Published: March 2010
View article titled, Exploring doping options and variability of trigate transistors using atomistic process and device simulations
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Journal Articles

Dopant measurements in semiconductors with atom probe tomography

P. A. Ronsheim, M. Hatzistergos, S. Jin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1E1–C1E4 (2010)
https://doi.org/10.1116/1.3242422
Published: March 2010
View article titled, Dopant measurements in semiconductors with atom probe tomography
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Journal Articles

Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy

H.-U. Ehrke, N. Loibl, M. P. Moret, F. Horréard, J. Choi, C. Hombourger, V. Paret, R. Benbalagh, N. Morel, M. Schuhmacher
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1C54–C1C58 (2010)
https://doi.org/10.1116/1.3253352
Published: March 2010
View article titled, Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy
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Journal Articles

Electrical characterization of InGaAs ultra-shallow junctions

Dirch H. Petersen, Ole Hansen, Peter Bøggild, Rong Lin, Peter F. Nielsen, Dennis Lin, Christoph Adelmann, Alireza Alian, Clement Merckling, Julien Penaud, Guy Brammertz, Jozefien Goossens, Wilfried Vandervorst, Trudo Clarysse
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1C41–C1C47 (2010)
https://doi.org/10.1116/1.3231492
Published: March 2010
View article titled, Electrical characterization of InGaAs ultra-shallow junctions
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Journal Articles

Amorphization of Si using cluster ions

Lucia Romano, Kevin S. Jones, Karuppanan Sekar, Wade A. Krull
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 597–600 (2009)
https://doi.org/10.1116/1.3089372
Published: March 2009
View article titled, Amorphization of Si using cluster ions
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