Tuning the electronic states of individual Co acceptors in GaAs | Citedby Results | Journal of Vacuum Science & Technology B | AIP Publishing

Skip to Main Content

Skip Nav Destination

Tuning the electronic states of individual Co acceptors in GaAs

J. Vac. Sci. Technol. B 31, 04D102 (2013)

This article has been cited by the following articles in journals that are participating in CrossRef Cited-by Linking.

Atomic-scale visualization of the p−d hybridization in III-V semiconductor surfaces doped with transition metal impurities

K. Badiane
G. Rodary
M. Amato
A. Gloter
C. David
H. Aubin
J.-C. Girard

Physical Review B (2022) 105 (23)

Substitutional Co dopant on the GaAs(110) surface: A first principles study

Zhou Fang
Zhijun Yi

Physica B: Condensed Matter (2016) 502: 1.

Influence of the local environment on Mn acceptors in GaAs

Donghun Lee
David Gohlke
Anne Benjamin
Jay A Gupta

Journal of Physics: Condensed Matter 27, 154202 (2015)