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Journal Articles

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Hankyu Kim, Miso Kim, Bumsang Kim, Bonggeun Shong

J. Vac. Sci. Technol. A 41, 063409 (2023)

https://doi.org/10.1116/6.0002966

Published: October 2023

View article titled, Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Includes: Supplementary data

Journal Articles

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin, Joseph R. Vella, Igor Kaganovich

J. Vac. Sci. Technol. A 41, 052602 (2023)

https://doi.org/10.1116/6.0002841

Published: August 2023

View article titled, Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Journal Articles

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 052707 (2023)

https://doi.org/10.1116/6.0002884

Published: August 2023

View article titled, Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Journal Articles

Investigating wet chemical oxidation methods to form SiO₂ interlayers for self-aligned Pt-HfO₂-Si gate stacks

Amy C. Brummer, Siddharth Kurup, Daniel Aziz, Michael A. Filler, Eric M. Vogel

J. Vac. Sci. Technol. A 41, 053201 (2023)

https://doi.org/10.1116/6.0002762

Published: July 2023

View article titled, Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

Journal Articles

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Charles W. Magee, Temel H. Buyuklimanli

J. Vac. Sci. Technol. A 41, 043413 (2023)

https://doi.org/10.1116/6.0002844

Published: June 2023

View article titled, Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Journal Articles

Exploring the self-limiting atomic layer etching of AlGaN: A study of O₂-BCl₃ and chlorinate-argon systems

Lulu Guan, Xingyu Li, Chunxiang Guo, Xinying Shi, Kaidong Xu, Shiwei Zhuang

J. Vac. Sci. Technol. A 41, 042603 (2023)

https://doi.org/10.1116/6.0002647

Published: June 2023

View article titled, Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems

Includes: Supplementary data

Journal Articles

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Stefan Schmult, Pascal Appelt, Claudia Silva, Steffen Wirth, Andre Wachowiak, Andreas Großer, Thomas Mikolajick

J. Vac. Sci. Technol. A 41, 042702 (2023)

https://doi.org/10.1116/6.0002652

Published: May 2023

View article titled, Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Journal Articles

Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

O. Fesiienko, C. Petit-Etienne, M. Darnon, A. Soltani, H. Maher, E. Pargon

J. Vac. Sci. Technol. A 41, 033004 (2023)

https://doi.org/10.1116/6.0002339

Published: April 2023

View article titled, Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

Journal Articles

NiO/β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton

J. Vac. Sci. Technol. A 41, 032701 (2023)

https://doi.org/10.1116/6.0002393

Published: March 2023

View article titled, NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Journal Articles

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Daniel C. Messina, Kevin A. Hatch, Saurabh Vishwakarma, David J. Smith, Yuji Zhao, Robert J. Nemanich

J. Vac. Sci. Technol. A 41, 022603 (2023)

https://doi.org/10.1116/6.0002255

Published: March 2023

View article titled, Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Includes: Supplementary data

Journal Articles

Dry etching in the presence of physisorption of neutrals at lower temperatures

Thorsten Lill, Ivan L. Berry, Meihua Shen, John Hoang, Andreas Fischer, Theo Panagopoulos, Jane P. Chang, Vahid Vahedi

J. Vac. Sci. Technol. A 41, 023005 (2023)

https://doi.org/10.1116/6.0002230

Published: February 2023

View article titled, Dry etching in the presence of physisorption of neutrals at lower temperatures

Journal Articles

On the limitations of thermal atomic layer deposition of InN using ammonia

Karl Rönnby, Henrik Pedersen, Lars Ojamäe

J. Vac. Sci. Technol. A 41, 020401 (2023)

https://doi.org/10.1116/6.0002355

Published: February 2023

View article titled, On the limitations of thermal atomic layer deposition of InN using ammonia

Includes: Supplementary data

Journal Articles

Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Joseph R. Vella, David B. Graves

J. Vac. Sci. Technol. A 40, 063203 (2022)

https://doi.org/10.1116/6.0002027

Published: October 2022

View article titled, Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Includes: Supplementary data

Journal Articles

Synthesis and characteristics of Sn-doped SiO₂ via plasma-enhanced atomic layer deposition for self-aligned patterning

Suhyeon Park, Junyung An, Hyeongtag Jeon

J. Vac. Sci. Technol. A 40, 062401 (2022)

https://doi.org/10.1116/6.0001895

Published: September 2022

View article titled, Synthesis and characteristics of Sn-doped SiO2 via plasma-enhanced atomic layer deposition for self-aligned patterning

Journal Articles

Ga⁺-focused ion beam damage in n-type Ga₂O₃

Xinyi Xia, Nahid Sultan Al-Mamun, Daudi Warywoba, Fan Ren, Aman Haque, S. J. Pearton

J. Vac. Sci. Technol. A 40, 053403 (2022)

https://doi.org/10.1116/5.0099892

Published: August 2022

View article titled, Ga+-focused ion beam damage in n-type Ga2O3

Journal Articles

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Kevin A. Hatch, Daniel C. Messina, Robert J. Nemanich

J. Vac. Sci. Technol. A 40, 042603 (2022)

https://doi.org/10.1116/6.0001871

Published: June 2022

View article titled, Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Journal Articles

Quantitative analysis of composition and temperature of semiconductor processing plasmas via terahertz spectroscopy

Yaser H. Helal, Christopher F. Neese, Frank C. De Lucia, Phillip J. Stout, Barry Craver, Michael Armacost

J. Vac. Sci. Technol. A 40, 043004 (2022)

https://doi.org/10.1116/6.0001843

Published: June 2022

View article titled, Quantitative analysis of composition and temperature of semiconductor processing plasmas via terahertz spectroscopy

Journal Articles

Amorphous semi-insulating Al-doped In₂O₃ growth by atomic layer deposition for thin-film transistors

Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji

J. Vac. Sci. Technol. A 40, 042402 (2022)

https://doi.org/10.1116/6.0001787

Published: May 2022

View article titled, Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Includes: Supplementary data

Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga₂O₃ rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 063405 (2021)

https://doi.org/10.1116/6.0001347

Published: September 2021

View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Journal Articles

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

Clint D. Frye, Scott B. Donald, Catherine Reinhardt, Lars F. Voss, Sara E. Harrison

J. Vac. Sci. Technol. A 39, 053002 (2021)

https://doi.org/10.1116/6.0001123

Published: August 2021

View article titled, Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

NARROW

Topics

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Investigating wet chemical oxidation methods to form SiO₂ interlayers for self-aligned Pt-HfO₂-Si gate stacks

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Exploring the self-limiting atomic layer etching of AlGaN: A study of O₂-BCl₃ and chlorinate-argon systems

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

NiO/β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Dry etching in the presence of physisorption of neutrals at lower temperatures

On the limitations of thermal atomic layer deposition of InN using ammonia

Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Synthesis and characteristics of Sn-doped SiO₂ via plasma-enhanced atomic layer deposition for self-aligned patterning

Ga⁺-focused ion beam damage in n-type Ga₂O₃

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Quantitative analysis of composition and temperature of semiconductor processing plasmas via terahertz spectroscopy

Amorphous semi-insulating Al-doped In₂O₃ growth by atomic layer deposition for thin-film transistors

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga₂O₃ rectifiers

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

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