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Journal Articles

Review on recent progress in patterning phase change materials

Meihua Shen, Thorsten Lill, Nick Altieri, John Hoang, Steven Chiou, Jim Sims, Andrew McKerrow, Rafal Dylewicz, Ernest Chen, Hamid Razavi, Jane P. Chang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 060802 (2020)
https://doi.org/10.1116/6.0000336
Published: September 2020
View articletitled, Review on recent progress in patterning phase change materials
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Journal Articles

Reactivity in metal-Ge-Te systems: Thermodynamic predictions and experimental observations

Kayla A. Cooley, Suzanne E. Mohney
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 061510 (2019)
https://doi.org/10.1116/1.5126109
Published: October 2019
View articletitled, Reactivity in metal-Ge-Te systems: Thermodynamic predictions and experimental observations
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Includes: Supplementary data
Journal Articles

Study of Ge-rich GeSbTe etching process with different halogen plasmas

Yann Canvel, Sébastien Lagrasta, Christelle Boixaderas, Sébastien Barnola, Yann Mazel, Eugénie Martinez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 031302 (2019)
https://doi.org/10.1116/1.5089037
Published: April 2019
View articletitled, Study of Ge-rich GeSbTe etching process with different halogen plasmas
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Journal Articles

Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer

In-Sung Park, Yong Chan Jung, Sejong Seong, Jinho Ahn, Sung Bo Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 01A153 (2015)
https://doi.org/10.1116/1.4904730
Published: December 2014
View articletitled, Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer
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Journal Articles

Resistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices

Hsiao-Ching Yang, Sea-Fue Wang, Jinn P. Chu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 061505 (2014)
https://doi.org/10.1116/1.4896329
Published: September 2014
View articletitled, Resistance switching behaviors of amorphous (ZrTiNi)Ox films for nonvolatile memory devices
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Journal Articles

Impact of precursor chemistry on atomic layer deposition of lutetium aluminates

Laura Nyns, Xiaoping Shi, Hilde Tielens, Sven Van Elshocht, Lucien Date, Robert Schreutelkamp
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 30, 01A120 (2012)
https://doi.org/10.1116/1.3662838
Published: November 2011
View articletitled, Impact of precursor chemistry on atomic layer deposition of lutetium aluminates
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Journal Articles

Ferroelectric properties of Bi 3.25 La 0.75 Ti 3 O 12 films using Hf O 2 as buffer layers for nonvolatile-memory field-effect transistors

Kyoung-Tae Kim, Gwan-Ha Kim, Jong-Chang Woo, Chang-II Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 1178–1181 (2008)
https://doi.org/10.1116/1.2960555
Published: August 2008
View articletitled, Ferroelectric properties of Bi 3.25 La 0.75 Ti 3 O 12 films using Hf O 2 as buffer layers for nonvolatile-memory field-effect transistors
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Journal Articles

Programmable memory devices using gold nanoparticles capped with alkanethiols of different carbon chain lengths

Pei Ying Lai, J. S. Chen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 1062–1067 (2008)
https://doi.org/10.1116/1.2836426
Published: July 2008
View articletitled, Programmable memory devices using gold nanoparticles capped with alkanethiols of different carbon chain lengths
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Journal Articles

Phase-change characteristics of chalcogenide Ge 1 Se 1 Te 2 thin films for use in nonvolatile memories

Hong-Bay Chung, Kyung Shin, Jae-Min Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 25, 48–53 (2007)
https://doi.org/10.1116/1.2388956
Published: December 2006
View articletitled, Phase-change characteristics of chalcogenide Ge 1 Se 1 Te 2 thin films for use in nonvolatile memories
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Journal Articles

Annealing temperature effect on the performance of nonvolatile HfO 2 Si-oxide-nitride-oxide-silicon-type flash memory

Yu-Hsien Lin, Chao-Hsin Chien, Chun-Yen Chang, Tan-Fu Lei
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 682–685 (2006)
https://doi.org/10.1116/1.2174021
Published: May 2006
View articletitled, Annealing temperature effect on the performance of nonvolatile HfO 2 Si-oxide-nitride-oxide-silicon-type flash memory
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Journal Articles

Fabrication of NiSi 2 nanocrystals embedded in SiO 2 with memory effect by oxidation of the amorphous Si ∕ Ni ∕ SiO 2 structure

P. H. Yeh, H. H. Wu, C. H. Yu, L. J. Chen, P. T. Liu, C. H. Hsu, T. C. Chang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 23, 851–855 (2005)
https://doi.org/10.1116/1.1913678
Published: June 2005
View articletitled, Fabrication of NiSi 2 nanocrystals embedded in SiO 2 with memory effect by oxidation of the amorphous Si ∕ Ni ∕ SiO 2 structure
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Journal Articles

Measuring vacuum ultraviolet radiation-induced damage

J. L. Lauer, J. L. Shohet, R. W. Hansen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 21, 1253–1259 (2003)
https://doi.org/10.1116/1.1565152
Published: July 2003
View articletitled, Measuring vacuum ultraviolet radiation-induced damage
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Journal Articles

Effects of BCl 3 addition on Ar/Cl 2 gas in inductively coupled plasmas for lead zirconate titanate etching

Tae-Hyun An, Joon-Yong Park, Geun-Young Yeom, Eui-Goo Chang, Chang-Il Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 18, 1373–1376 (2000)
https://doi.org/10.1116/1.582356
Published: July 2000
View articletitled, Effects of BCl 3 addition on Ar/Cl 2 gas in inductively coupled plasmas for lead zirconate titanate etching
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Journal Articles

Pseudo spin valve magnetoresistive random access memory

B. A. Everitt, A. V. Pohm
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 16, 1794–1800 (1998)
https://doi.org/10.1116/1.581109
Published: May 1998
View articletitled, Pseudo spin valve magnetoresistive random access memory
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Journal Articles

Integration of ferroelectric thin films into nonvolatile memories

S. Sinharoy, H. Buhay, D. R. Lampe, M. H. Francombe
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 10, 1554–1561 (1992)
https://doi.org/10.1116/1.578044
Published: July 1992
View articletitled, Integration of ferroelectric thin films into nonvolatile memories
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Journal Articles

Analysis and reduction of conductor stress in magnetic bubble memory devices

H. Umezaki, S. Isomae, T. Sato, T. Toyooka, R. Suzuki
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 8, 73–78 (1990)
https://doi.org/10.1116/1.576990
Published: January 1990
View articletitled, Analysis and reduction of conductor stress in magnetic bubble memory devices
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Journal Articles

Influence of conductor steps in passivation stress in magnetic bubble memory devices

H. Umezaki, T. Sato, T. Toyooka, R. Suzuki
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 7, 2261–2266 (1989)
https://doi.org/10.1116/1.575925
Published: May 1989
View articletitled, Influence of conductor steps in passivation stress in magnetic bubble memory devices
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