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Journal Articles

Insights into the genesis of oxygen vacancies and atomically dispersed Ni^δ− species in anatase TiO₂: A spectroscopic study

Xiaoqiang Zhang, Yuteng Feng, Wei Zhang, Changhui Liang, Huixiang Li, Yongxin Li, Z. Conrad Zhang

J. Vac. Sci. Technol. A 42, 063208 (2024)

https://doi.org/10.1116/6.0003969

Published: October 2024

View article titled, Insights into the genesis of oxygen vacancies and atomically dispersed Niδ− species in anatase TiO2: A spectroscopic study

Journal Articles

Measurements of atomic hydrogen recombination coefficients and the reduction of Al₂O₃ using a heat flux sensor

Aneta S. Stodolna, Shyama Ramankutty, Michiel Blauw, Tommy de Jonge, Arnold J. Storm, J. F. M. Velthuis

J. Vac. Sci. Technol. A 42, 053003 (2024)

https://doi.org/10.1116/6.0003544

Published: July 2024

View article titled, Measurements of atomic hydrogen recombination coefficients and the reduction of Al2O3 using a heat flux sensor

Journal Articles

Atomic layer etching in HBr/He/Ar/O₂ plasmas

Qinzhen Hao, Mahmoud A. I. Elgarhy, Pilbum Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly

J. Vac. Sci. Technol. A 42, 042601 (2024)

https://doi.org/10.1116/6.0003593

Published: May 2024

View article titled, Atomic layer etching in HBr/He/Ar/O2 plasmas

Journal Articles

Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching

Christian Miersch, Sarah Seidel, Alexander Schmid, Thomas Fuhs, Johannes Heitmann, Franziska C. Beyer

J. Vac. Sci. Technol. A 42, 022604 (2024)

https://doi.org/10.1116/6.0003350

Published: February 2024

View article titled, Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching

Journal Articles

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Hankyu Kim, Miso Kim, Bumsang Kim, Bonggeun Shong

J. Vac. Sci. Technol. A 41, 063409 (2023)

https://doi.org/10.1116/6.0002966

Published: October 2023

View article titled, Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Includes: Supplementary data

Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han

J. Vac. Sci. Technol. A 41, 062406 (2023)

https://doi.org/10.1116/6.0003004

Published: October 2023

View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Includes: Supplementary data

Journal Articles

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin, Joseph R. Vella, Igor Kaganovich

J. Vac. Sci. Technol. A 41, 052602 (2023)

https://doi.org/10.1116/6.0002841

Published: August 2023

View article titled, Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Journal Articles

In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor

Jan-Willem J. Clerix, Golnaz Dianat, Annelies Delabie, Gregory N. Parsons

J. Vac. Sci. Technol. A 41, 032406 (2023)

https://doi.org/10.1116/6.0002493

Published: March 2023

View article titled, In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor

Journal Articles

Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

Yuxiao Lan, Yanwei Wen, Yicheng Li, Jiaqiang Yang, Kun Cao, Bin Shan, Rong Chen

J. Vac. Sci. Technol. A 41, 012402 (2023)

https://doi.org/10.1116/6.0002173

Published: December 2022

View article titled, Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

Includes: Supplementary data

Journal Articles

Effects of metal redeposition in plasma sputtering

Kei Kiyokawa, Reiko Saito, Masato Morita, Tetsuo Sakamoto

J. Vac. Sci. Technol. A 40, 063009 (2022)

https://doi.org/10.1116/6.0002204

Published: November 2022

View article titled, Effects of metal redeposition in plasma sputtering

Includes: Supplementary data

Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori

J. Vac. Sci. Technol. A 40, 062601 (2022)

https://doi.org/10.1116/6.0002044

Published: October 2022

View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Journal Articles

Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Tanzia Chowdhury, Romel Hidayat, Tirta Rona Mayangsari, Jiyeon Gu, Hye-Lee Kim, Jongwan Jung, Won-Jun Lee

J. Vac. Sci. Technol. A 40, 047001 (2022)

https://doi.org/10.1116/6.0001965

Published: June 2022

View article titled, Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Journal Articles

Plasma enhanced atomic layer etching of high-k layers on WS₂

J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, S. De Gendt

J. Vac. Sci. Technol. A 40, 042602 (2022)

https://doi.org/10.1116/6.0001726

Published: May 2022

View article titled, Plasma enhanced atomic layer etching of high-k layers on WS2

Journal Articles

Preface for the special collection commemorating the career of Pat Thiel

Donna A. Chen, Ann Lii-Rosales, James W. Evans

J. Vac. Sci. Technol. A 40, 031601 (2022)

https://doi.org/10.1116/6.0001807

Published: March 2022

View article titled, Preface for the special collection commemorating the career of Pat Thiel

Journal Articles

Nucleation, growth, and stability of WSe₂ thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

Hugh J. Bullen, Suresh Vishwanath, Rambert K. Nahm, H. Grace Xing, James R. Engstrom

J. Vac. Sci. Technol. A 40, 012201 (2022)

https://doi.org/10.1116/6.0001407

Published: November 2021

View article titled, Nucleation, growth, and stability of WSe2 thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

Includes: Supplementary data

Journal Articles

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Romel Hidayat, Hye-Lee Kim, Hohoon Kim, Younghun Byun, Jongsoo Lee, Won-Jun Lee

J. Vac. Sci. Technol. A 39, 032410 (2021)

https://doi.org/10.1116/6.0000796

Published: March 2021

View article titled, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Includes: Supplementary data

Journal Articles

Thermal atomic layer etching: A review

Andreas Fischer, Aaron Routzahn, Steven M. George, Thorsten Lill

J. Vac. Sci. Technol. A 39, 030801 (2021)

https://doi.org/10.1116/6.0000894

Published: March 2021

View article titled, Thermal atomic layer etching: A review

Journal Articles

Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr_xHf_1−xO₂

Triratna Muneshwar, Doug Barlage, Ken Cadien

J. Vac. Sci. Technol. A 39, 030401 (2021)

https://doi.org/10.1116/6.0000856

Published: March 2021

View article titled, Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for ZrxHf1−xO2

Includes: Supplementary data

Journal Articles

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Wanxing Xu, Paul C. Lemaire, Kashish Sharma, Ryan J. Gasvoda, Dennis M. Hausmann, Sumit Agarwal

J. Vac. Sci. Technol. A 39, 032402 (2021)

https://doi.org/10.1116/6.0000699

Published: March 2021

View article titled, Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Journal Articles

Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N₂/H₂ plasma

Deepa Shukla, Adnan Mohammad, Saidjafarzoda Ilhom, Brian G. Willis, Ali Kemal Okyay, Necmi Biyikli

J. Vac. Sci. Technol. A 39, 022406 (2021)

https://doi.org/10.1116/6.0000706

Published: February 2021

View article titled, Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma

Includes: Supplementary data

NARROW

Topics

Insights into the genesis of oxygen vacancies and atomically dispersed Ni^δ− species in anatase TiO₂: A spectroscopic study

Measurements of atomic hydrogen recombination coefficients and the reduction of Al₂O₃ using a heat flux sensor

Atomic layer etching in HBr/He/Ar/O₂ plasmas

Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor

Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

Effects of metal redeposition in plasma sputtering

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Plasma enhanced atomic layer etching of high-k layers on WS₂

Preface for the special collection commemorating the career of Pat Thiel

Nucleation, growth, and stability of WSe₂ thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Thermal atomic layer etching: A review

Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr_xHf_1−xO₂

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N₂/H₂ plasma

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