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Journal Articles

Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride

Hankyu Kim, Miso Kim, Bumsang Kim, Bonggeun Shong
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063409 (2023)
https://doi.org/10.1116/6.0002966
Published: October 2023
View article titled, Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride
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Includes: Supplementary data
Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062406 (2023)
https://doi.org/10.1116/6.0003004
Published: October 2023
View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin, Joseph R. Vella, Igor Kaganovich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052602 (2023)
https://doi.org/10.1116/6.0002841
Published: August 2023
View article titled, Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study
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Journal Articles

In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor

Jan-Willem J. Clerix, Golnaz Dianat, Annelies Delabie, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032406 (2023)
https://doi.org/10.1116/6.0002493
Published: March 2023
View article titled, <em>In situ</em> analysis of nucleation reactions during TiCl<sub>4</sub>/H<sub>2</sub>O atomic layer deposition on SiO<sub>2</sub> and H-terminated Si surfaces treated with a silane small molecule inhibitor
Open the PDF for <em>In situ</em> analysis of nucleation reactions during TiCl<sub>4</sub>/H<sub>2</sub>O atomic layer deposition on SiO<sub>2</sub> and H-terminated Si surfaces treated with a silane small molecule inhibitor in another window
Journal Articles

Dry etching in the presence of physisorption of neutrals at lower temperatures

Thorsten Lill, Ivan L. Berry, Meihua Shen, John Hoang, Andreas Fischer, Theo Panagopoulos, Jane P. Chang, Vahid Vahedi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023005 (2023)
https://doi.org/10.1116/6.0002230
Published: February 2023
View article titled, Dry etching in the presence of physisorption of neutrals at lower temperatures
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Journal Articles

Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets

Yuxiao Lan, Yanwei Wen, Yicheng Li, Jiaqiang Yang, Kun Cao, Bin Shan, Rong Chen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012402 (2023)
https://doi.org/10.1116/6.0002173
Published: December 2022
View article titled, Selectivity dependence of atomic layer deposited manganese oxide on the precursor ligands on platinum facets
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Includes: Supplementary data
Journal Articles

Effects of metal redeposition in plasma sputtering

Kei Kiyokawa, Reiko Saito, Masato Morita, Tetsuo Sakamoto
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063009 (2022)
https://doi.org/10.1116/6.0002204
Published: November 2022
View article titled, Effects of metal redeposition in plasma sputtering
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Includes: Supplementary data
Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Published: October 2022
View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
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Journal Articles

Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Tanzia Chowdhury, Romel Hidayat, Tirta Rona Mayangsari, Jiyeon Gu, Hye-Lee Kim, Jongwan Jung, Won-Jun Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 047001 (2022)
https://doi.org/10.1116/6.0001965
Published: June 2022
View article titled, Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]
Open the PDF for Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)] in another window
Journal Articles

Plasma enhanced atomic layer etching of high-k layers on WS2

J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, S. De Gendt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042602 (2022)
https://doi.org/10.1116/6.0001726
Published: May 2022
View article titled, Plasma enhanced atomic layer etching of high-k layers on WS<sub>2</sub>
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Journal Articles

Preface for the special collection commemorating the career of Pat Thiel

Donna A. Chen, Ann Lii-Rosales, James W. Evans
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 031601 (2022)
https://doi.org/10.1116/6.0001807
Published: March 2022
View article titled, Preface for the special collection commemorating the career of Pat Thiel
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Journal Articles

Nucleation, growth, and stability of WSe2 thin films deposited on HOPG examined using in situ, real-time synchrotron x-ray radiation

Hugh J. Bullen, Suresh Vishwanath, Rambert K. Nahm, H. Grace Xing, James R. Engstrom
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 012201 (2022)
https://doi.org/10.1116/6.0001407
Published: November 2021
View article titled, Nucleation, growth, and stability of WSe<sub>2</sub> thin films deposited on HOPG examined using <em>in situ</em>, real-time synchrotron x-ray radiation
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Includes: Supplementary data
Journal Articles

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Romel Hidayat, Hye-Lee Kim, Hohoon Kim, Younghun Byun, Jongsoo Lee, Won-Jun Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032410 (2021)
https://doi.org/10.1116/6.0000796
Published: March 2021
View article titled, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study
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Includes: Supplementary data
Journal Articles

Thermal atomic layer etching: A review

Andreas Fischer, Aaron Routzahn, Steven M. George, Thorsten Lill
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 030801 (2021)
https://doi.org/10.1116/6.0000894
Published: March 2021
View article titled, Thermal atomic layer etching: A review
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Journal Articles

Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for ZrxHf1−xO2

Triratna Muneshwar, Doug Barlage, Ken Cadien
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 030401 (2021)
https://doi.org/10.1116/6.0000856
Published: March 2021
View article titled, Stoichiometry controlled homogeneous ternary oxide growth in showerhead atomic layer deposition reactor and application for Zr<sub>x</sub>Hf<sub>1−x</sub>O<sub>2</sub>
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Includes: Supplementary data
Journal Articles

Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Wanxing Xu, Paul C. Lemaire, Kashish Sharma, Ryan J. Gasvoda, Dennis M. Hausmann, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032402 (2021)
https://doi.org/10.1116/6.0000699
Published: March 2021
View article titled, Mechanism for growth initiation on aminosilane-functionalized SiO<sub>2</sub> during area-selective atomic layer deposition of ZrO<sub>2</sub>
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Journal Articles

Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition

Josiah Yarbrough, Alex B. Shearer, Stacey F. Bent
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 021002 (2021)
https://doi.org/10.1116/6.0000840
Published: March 2021
View article titled, Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition
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Journal Articles

Real-time in situ process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N2/H2 plasma

Deepa Shukla, Adnan Mohammad, Saidjafarzoda Ilhom, Brian G. Willis, Ali Kemal Okyay, Necmi Biyikli
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 022406 (2021)
https://doi.org/10.1116/6.0000706
Published: February 2021
View article titled, Real-time <em>in situ</em> process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N<sub>2</sub>/H<sub>2</sub> plasma
Open the PDF for Real-time <em>in situ</em> process monitoring and characterization of GaN films grown on Si (100) by low-temperature hollow-cathode plasma-atomic layer deposition using trimethylgallium and N<sub>2</sub>/H<sub>2</sub> plasma in another window
Includes: Supplementary data
Journal Articles

Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors

Aleksei V. Almaev, Evgeny V. Chernikov, Vadim V. Novikov, Bogdan O. Kushnarev, Nikita N. Yakovlev, Ekaterina V. Chuprakova, Vladimir L. Oleinik, Anastasiya D. Lozinskaya, Daniela S. Gogova
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023405 (2021)
https://doi.org/10.1116/6.0000723
Published: January 2021
View article titled, Impact of Cr<sub>2</sub>O<sub>3</sub> additives on the gas-sensitive properties of β-Ga<sub>2</sub>O<sub>3</sub> thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors
Open the PDF for Impact of Cr<sub>2</sub>O<sub>3</sub> additives on the gas-sensitive properties of β-Ga<sub>2</sub>O<sub>3</sub> thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors in another window
Journal Articles

Area-selective atomic layer deposition enabled by competitive adsorption

Taewon Suh, Yan Yang, Hae Won Sohn, Robert A. DiStasio, Jr., James R. Engstrom
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 062411 (2020)
https://doi.org/10.1116/6.0000497
Published: November 2020
View article titled, Area-selective atomic layer deposition enabled by competitive adsorption
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Includes: Supplementary data