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Journal Articles

Etching and fluorination of yttrium oxide (Y₂O₃) irradiated with fluorine ions or radicals

Hojun Kang, Tomoko Ito, Junghwan Um, Hikaru Kokura, Sungil Cho, Hyunjung Park, Kazuhiro Karahashi, Satoshi Hamaguchi

J. Vac. Sci. Technol. A 43, 013003 (2025)

https://doi.org/10.1116/6.0004137

Published: January 2025

View article titled, Etching and fluorination of yttrium oxide (Y2O3) irradiated with fluorine ions or radicals

Journal Articles

Ultrathin ZrO₂ thickness control on TiO₂/ZrO₂ core/shell nanoparticles using ZrO₂ atomic layer deposition and etching

Janine D. Sempel, Marja-Leena Kaariainen, Troy A. Colleran, Alejo M. Lifschitz, Steven M. George

J. Vac. Sci. Technol. A 42, 052604 (2024)

https://doi.org/10.1116/6.0003781

Published: August 2024

View article titled, Ultrathin ZrO2 thickness control on TiO2/ZrO2 core/shell nanoparticles using ZrO2 atomic layer deposition and etching

Journal Articles

Characterization of elastomer degradation in O₂/Ar plasma via mass and surface morphology changes

Nicholas Connolly, Michael Hysick, David E. Barlaz, Raquel Garza, Gilberto Lunardi, David N. Ruzic

J. Vac. Sci. Technol. A 42, 023004 (2024)

https://doi.org/10.1116/6.0003240

Published: February 2024

View article titled, Characterization of elastomer degradation in O2/Ar plasma via mass and surface morphology changes

Journal Articles

Thermal atomic layer etching of VO₂ using sequential BCl₃ and SF₄ exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Jonas C. Gertsch, Jonathan L. Partridge, Austin M. Cano, Joel W. Clancey, Victor M. Bright, Steven M. George

J. Vac. Sci. Technol. A 41, 012603 (2023)

https://doi.org/10.1116/6.0002149

Published: January 2023

View article titled, Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Includes: Supplementary data

Journal Articles

CF₄ plasma-based atomic layer etching of Al₂O₃ and surface smoothing effect

Chien-Wei Chen, Wen-Hao Cho, Chan-Yuen Chang, Chien-Ying Su, Nien-Nan Chu, Chi-Chung Kei, Bor-Ran Li

J. Vac. Sci. Technol. A 41, 012602 (2023)

https://doi.org/10.1116/6.0002210

Published: December 2022

View article titled, CF4 plasma-based atomic layer etching of Al2O3 and surface smoothing effect

Includes: Supplementary data

Journal Articles

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Andreas Fischer, David Mui, Aaron Routzahn, Ryan Gasvoda, Jim Sims, Thorsten Lill

J. Vac. Sci. Technol. A 41, 012601 (2023)

https://doi.org/10.1116/6.0002244

Published: December 2022

View article titled, Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Journal Articles

SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam

Kang-Yi Lin, Christian Preischl, Christian Felix Hermanns, Daniel Rhinow, Hans-Michael Solowan, Michael Budach, Klaus Edinger, G. S. Oehrlein

J. Vac. Sci. Technol. A 40, 063004 (2022)

https://doi.org/10.1116/6.0002038

Published: October 2022

View article titled, SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam

Journal Articles

Atomic layer etching of Al₂O₃ with NF₃ plasma fluorination and trimethylaluminum ligand exchange

Jihyun Kim, Dahee Shim, Yongjae Kim, Heeyeop Chae

J. Vac. Sci. Technol. A 40, 032603 (2022)

https://doi.org/10.1116/6.0001616

Published: April 2022

View article titled, Atomic layer etching of Al2O3 with NF3 plasma fluorination and trimethylaluminum ligand exchange

Journal Articles

Origin of enhanced thermal atomic layer etching of amorphous HfO₂

Rita Mullins, José Julio Gutiérrez Moreno, Michael Nolan

J. Vac. Sci. Technol. A 40, 022604 (2022)

https://doi.org/10.1116/6.0001614

Published: February 2022

View article titled, Origin of enhanced thermal atomic layer etching of amorphous HfO2

Includes: Supplementary data

Journal Articles

Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

Andreas Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, Thorsten Lill

J. Vac. Sci. Technol. A 40, 022603 (2022)

https://doi.org/10.1116/6.0001691

Published: February 2022

View article titled, Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

Journal Articles

Deposit and etchback approach for ultrathin Al₂O₃ films with low pinhole density using atomic layer deposition and atomic layer etching

Jonas C. Gertsch, Emanuele Sortino, Victor M. Bright, Steven M. George

J. Vac. Sci. Technol. A 39, 062602 (2021)

https://doi.org/10.1116/6.0001340

Published: November 2021

View article titled, Deposit and etchback approach for ultrathin Al2O3 films with low pinhole density using atomic layer deposition and atomic layer etching

Journal Articles

Thermal atomic layer etching of amorphous and crystalline Al₂O₃ films

Jessica A. Murdzek, Adarsh Rajashekhar, Raghuveer S. Makala, Steven M. George

J. Vac. Sci. Technol. A 39, 042602 (2021)

https://doi.org/10.1116/6.0000995

Published: June 2021

View article titled, Thermal atomic layer etching of amorphous and crystalline Al2O3 films

Journal Articles

Atomic layer deposition of hafnium and zirconium oxyfluoride thin films

Neha Mahuli, Andrew S. Cavanagh, Steven M. George

J. Vac. Sci. Technol. A 39, 022403 (2021)

https://doi.org/10.1116/6.0000731

Published: January 2021

View article titled, Atomic layer deposition of hafnium and zirconium oxyfluoride thin films

Journal Articles

Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

Jessica A. Murdzek, Steven M. George

J. Vac. Sci. Technol. A 38, 022608 (2020)

https://doi.org/10.1116/1.5135317

Published: February 2020

View article titled, Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

Journal Articles

Plasma atomic layer etching of SiO₂ and Si₃N₄ with heptafluoropropyl methyl ether (C₃F₇OCH₃)

Yongjae Kim, Sangin Lee, Yegeun Cho, Seoeun Kim, Heeyeop Chae

J. Vac. Sci. Technol. A 38, 022606 (2020)

https://doi.org/10.1116/1.5134710

Published: February 2020

View article titled, Plasma atomic layer etching of SiO2 and Si3N4 with heptafluoropropyl methyl ether (C3F7OCH3)

Journal Articles

Atomic layer deposition of aluminum oxyfluoride thin films with tunable stoichiometry

Neha Mahuli, Andrew S. Cavanagh, Steven M. George

J. Vac. Sci. Technol. A 38, 022407 (2020)

https://doi.org/10.1116/1.5135014

Published: January 2020

View article titled, Atomic layer deposition of aluminum oxyfluoride thin films with tunable stoichiometry

Journal Articles

Rapid atomic layer etching of Al₂O₃ using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging

David R. Zywotko, Jacques Faguet, Steven M. George

J. Vac. Sci. Technol. A 36, 061508 (2018)

https://doi.org/10.1116/1.5043488

Published: October 2018

View article titled, Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging

Journal Articles

Quasi atomic layer etching of SiO₂ using plasma fluorination for surface cleaning

Kyongbeom Koh, Yongjae Kim, Chang-Koo Kim, Heeyeop Chae

J. Vac. Sci. Technol. A 36, 01B106 (2018)

https://doi.org/10.1116/1.5003417

Published: December 2017

View article titled, Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning

Journal Articles

Fluorocarbon based atomic layer etching of Si₃N₄ and etching selectivity of SiO₂ over Si₃N₄

Chen Li, Dominik Metzler, Chiukin Steven Lai, Eric A. Hudson, Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 34, 041307 (2016)

https://doi.org/10.1116/1.4954961

Published: July 2016

View article titled, Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

Journal Articles

Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

Seung Hyun Kang, Jong Kyu Kim, Sung Ho Lee, Jin Woo Kim, Geun Young Yeom

J. Vac. Sci. Technol. A 33, 021309 (2015)

https://doi.org/10.1116/1.4905736

Published: January 2015

View article titled, Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

NARROW

Topics

Etching and fluorination of yttrium oxide (Y₂O₃) irradiated with fluorine ions or radicals

Ultrathin ZrO₂ thickness control on TiO₂/ZrO₂ core/shell nanoparticles using ZrO₂ atomic layer deposition and etching

Characterization of elastomer degradation in O₂/Ar plasma via mass and surface morphology changes

Thermal atomic layer etching of VO₂ using sequential BCl₃ and SF₄ exposures: Observation of conversion, ligand-exchange, and oxidation state changes

CF₄ plasma-based atomic layer etching of Al₂O₃ and surface smoothing effect

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam

Atomic layer etching of Al₂O₃ with NF₃ plasma fluorination and trimethylaluminum ligand exchange

Origin of enhanced thermal atomic layer etching of amorphous HfO₂

Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

Deposit and etchback approach for ultrathin Al₂O₃ films with low pinhole density using atomic layer deposition and atomic layer etching

Thermal atomic layer etching of amorphous and crystalline Al₂O₃ films

Atomic layer deposition of hafnium and zirconium oxyfluoride thin films

Effect of crystallinity on thermal atomic layer etching of hafnium oxide, zirconium oxide, and hafnium zirconium oxide

Plasma atomic layer etching of SiO₂ and Si₃N₄ with heptafluoropropyl methyl ether (C₃F₇OCH₃)

Atomic layer deposition of aluminum oxyfluoride thin films with tunable stoichiometry

Rapid atomic layer etching of Al₂O₃ using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging

Quasi atomic layer etching of SiO₂ using plasma fluorination for surface cleaning

Fluorocarbon based atomic layer etching of Si₃N₄ and etching selectivity of SiO₂ over Si₃N₄

Low damage etching method of low-k material with a neutral beam for interlayer dielectric of semiconductor device

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