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Journal Articles

Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications

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Sana Rachidi, Alain Campo, Virginie Loup, Christian Vizioz, Jean-Michel Hartmann, Sébastien Barnola, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033002 (2020)
https://doi.org/10.1116/1.5143118
Published: March 2020
View article titled, Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications
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Journal Articles

Antimony segregation in the oxidation of AlAsSb interlayers

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A. M Andrews, K. L. van Horn, T. Mates, J. S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 21, 1883–1891 (2003)
https://doi.org/10.1116/1.1613954
Published: October 2003
View article titled, Antimony segregation in the oxidation of AlAsSb interlayers
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Journal Articles

Characteristics of ultrathin SiO 2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

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M.-H. Cho, J. S. Shin, Y. S. Roh, I.-W. Lyo, K. Jeong, C. N. Whang, J. S. Lee, J. Y. Yoo, N. I. Lee, K. Fujihara, Dae Won Moon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 21, 1004–1008 (2003)
https://doi.org/10.1116/1.1582455
Published: June 2003
View article titled, Characteristics of ultrathin SiO 2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation
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Journal Articles

Wet oxidation behaviors of polycrystalline Si 1−x Ge x films

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S.-K. Kang, D.-H. Ko, K. C. Lee, T. W. Lee, Y. H. Lee, T. H. Ahn, I. S. Yeo, S. H. Oh, C. G. Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 19, 1617–1622 (2001)
https://doi.org/10.1116/1.1339022
Published: July 2001
View article titled, Wet oxidation behaviors of polycrystalline Si 1−x Ge x films
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Journal Articles

Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry

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Yao Zhi Hu, Rahul Sharangpani, Sing-Pin Tay
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 18, 2527–2532 (2000)
https://doi.org/10.1116/1.1287156
Published: September 2000
View article titled, Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry
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Journal Articles

Ultrafine silicon quantum wires fabricated by selective chemical etching and thermal oxidation

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Y. Shi, J. L. Liu, F. Wang, Y. Lu, R. Zhang, S. L. Gu, P. Han, L. Q. Hu, Y. D. Zheng, C. Y. Lin, D. A. Du
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 14, 1194–1198 (1996)
https://doi.org/10.1116/1.580265
Published: May 1996
View article titled, Ultrafine silicon quantum wires fabricated by selective chemical etching and thermal oxidation
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Journal Articles

Comparison of two epitaxial formation mechanisms in the SiGe system and the subsequent defect generation

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S. M. Prokes, A. K. Rai
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 12, 1148–1151 (1994)
https://doi.org/10.1116/1.579182
Published: July 1994
View article titled, Comparison of two epitaxial formation mechanisms in the SiGe system and the subsequent defect generation
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