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Effect of mask geometry on high aspect ratio silicon etching using Cl₂/O₂ plasma

Xingyi Shi, Han Luo, Shahid Rauf, Jason Kenney, Geuntak Lee, Sonam Sherpa, Takumi Yanagawa

J. Vac. Sci. Technol. A 43, 053001 (2025)

https://doi.org/10.1116/6.0004650

Published: July 2025

View article titled, Effect of mask geometry on high aspect ratio silicon etching using Cl2/O2 plasma

Journal Articles

Kinetics model for thermal selective etching of Si_1−xGe_x in F₂/Ar

Yi Chen, Daniel Cho, John Hoang, Nicholas Altieri, Ji Zhu, Samantha Tan, Jane P. Chang

J. Vac. Sci. Technol. A 43, 042604 (2025)

https://doi.org/10.1116/6.0004634

Published: June 2025

View article titled, Kinetics model for thermal selective etching of Si1−xGex in F2/Ar

Journal Articles

In situ, simultaneous spectroscopic ellipsometry and quadrupole mass spectrometry studies of ZnO etching using Hacac and O₂ plasma

Terrick McNealy-James, Ruthlyn Mangroo, S. Novia Berriel, Luis Tomar, Eric Bissell, Taylor M. Currie, Justin Moore, Titel Jurca, Parag Banerjee

J. Vac. Sci. Technol. A 43, 042602 (2025)

https://doi.org/10.1116/6.0004417

Published: May 2025

View article titled, In situ, simultaneous spectroscopic ellipsometry and quadrupole mass spectrometry studies of ZnO etching using Hacac and O2 plasma

Journal Articles

Enhanced tribocorrosive properties of precipitation-hardened martensitic stainless steel by arc plasma nitriding

Lin Zhang, Jin Gu, Kaiqiang Qi, Jie Jin, Xingguang Liu, Jun Zheng

J. Vac. Sci. Technol. A 43, 033104 (2025)

https://doi.org/10.1116/6.0004453

Published: April 2025

View article titled, Enhanced tribocorrosive properties of precipitation-hardened martensitic stainless steel by arc plasma nitriding

Journal Articles

SiO₂ atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Hwan Oh, Hyuenwoo Yang, Nicholas M. Carroll, Yujin Jang, Gregory N. Parsons

J. Vac. Sci. Technol. A 43, 032401 (2025)

https://doi.org/10.1116/6.0004298

Published: March 2025

View article titled, SiO2 atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Journal Articles

Spatial atomic layer deposition: Transport-reaction modeling and experimental validation of film geometry

Daniel Penley, Neil P. Dasgupta

J. Vac. Sci. Technol. A 43, 022415 (2025)

https://doi.org/10.1116/6.0004367

Published: March 2025

View article titled, Spatial atomic layer deposition: Transport-reaction modeling and experimental validation of film geometry

Journal Articles

Metallic molybdenum obtained by atomic layer deposition from Mo(CO)₆

Kees van der Zouw, Bernhard Y. van der Wel, Jacobus M. Sturm, Antonius A. I. Aarnink, Rob A. M. Wolters, Dirk J. Gravesteijn, Alexey Y. Kovalgin

J. Vac. Sci. Technol. A 43, 022407 (2025)

https://doi.org/10.1116/6.0004244

Published: February 2025

View article titled, Metallic molybdenum obtained by atomic layer deposition from Mo(CO)6

Includes: Supplementary data

Journal Articles

Area selective PECVD on metal oxide resist

Rosanna A. Robert, Katie Lutker-Lee, Christophe Vallée

J. Vac. Sci. Technol. A 43, 023407 (2025)

https://doi.org/10.1116/6.0004072

Published: February 2025

View article titled, Area selective PECVD on metal oxide resist

Journal Articles

Investigation of ruthenium etching induced by electron beam irradiation and O₂/Cl₂ remote plasma-based neutral fluxes: Mechanistic insights and etching model

Yudong Li, Hubertus Marbach, Christian Preischl, Michael Budach, Daniel Rhinow, Michael Hinshelwood, Klaus Edinger, Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 43, 023005 (2025)

https://doi.org/10.1116/6.0004219

Published: February 2025

View article titled, Investigation of ruthenium etching induced by electron beam irradiation and O2/Cl2 remote plasma-based neutral fluxes: Mechanistic insights and etching model

Journal Articles

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. I. Modeling framework and simulation

Zach Zajo, David S. L. Mui, Ji Zhu, Mark Kawaguchi, Eric S. G. Shaqfeh

J. Vac. Sci. Technol. A 43, 013006 (2025)

https://doi.org/10.1116/6.0004155

Published: January 2025

View article titled, Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. I. Modeling framework and simulation

Journal Articles

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. II. Experiments and model validation

Zach Zajo, David S. L. Mui, Ji Zhu, Yusef Shari’ati, Mark Kawaguchi, Eric S. G. Shaqfeh

J. Vac. Sci. Technol. A 43, 013007 (2025)

https://doi.org/10.1116/6.0004156

Published: January 2025

View article titled, Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. II. Experiments and model validation

Journal Articles

Etching and fluorination of yttrium oxide (Y₂O₃) irradiated with fluorine ions or radicals

Hojun Kang, Tomoko Ito, Junghwan Um, Hikaru Kokura, Sungil Cho, Hyunjung Park, Kazuhiro Karahashi, Satoshi Hamaguchi

J. Vac. Sci. Technol. A 43, 013003 (2025)

https://doi.org/10.1116/6.0004137

Published: January 2025

View article titled, Etching and fluorination of yttrium oxide (Y2O3) irradiated with fluorine ions or radicals

Journal Articles

Modeling scale-up of particle coating by atomic layer deposition

Angel Yanguas-Gil, Jeffrey W. Elam

J. Vac. Sci. Technol. A 43, 012404 (2025)

https://doi.org/10.1116/6.0004006

Published: December 2024

View article titled, Modeling scale-up of particle coating by atomic layer deposition

Journal Articles

Surface passivation approaches for silicon, germanium, and III–V semiconductors

Roel J. Theeuwes, Wilhelmus M. M. Kessels, Bart Macco

J. Vac. Sci. Technol. A 42, 060801 (2024)

https://doi.org/10.1116/6.0004030

Published: November 2024

View article titled, Surface passivation approaches for silicon, germanium, and III–V semiconductors

Journal Articles

Substrate induced composition change during Ge₂Sb₂Te₅ atomic layer deposition and study of initial reactions on SiO₂ surface

Jyoti Sinha, Laura Nyns, Annelies Delabie

J. Vac. Sci. Technol. A 42, 062412 (2024)

https://doi.org/10.1116/6.0003890

Published: November 2024

View article titled, Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface

Journal Articles

Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

Vitaly Kuzmenko, Alexander Melnikov, Alexandr Isaev, Andrey Miakonkikh

J. Vac. Sci. Technol. A 42, 052602 (2024)

https://doi.org/10.1116/6.0003717

Published: July 2024

View article titled, Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

Journal Articles

Mechanism study of H₂-plasma assisted Si₃N₄ layered etch

Ying Rui, Sumeet Pandey, Chenmeng Hsie, Lan Li

J. Vac. Sci. Technol. A 42, 042603 (2024)

https://doi.org/10.1116/6.0003653

Published: June 2024

View article titled, Mechanism study of H2-plasma assisted Si3N4 layered etch

Journal Articles

Bacterial and corrosion resistance of polytetrafluoroethylene-silver composite coatings by magnetron sputtering

Haiwen Li, Zhiwen He, Wei Wu, Long Zheng, Qingfang Xu, Tenghua Gao, Song Zhang, Honglian Dai, Takashi Goto, Rong Tu

J. Vac. Sci. Technol. A 42, 043409 (2024)

https://doi.org/10.1116/6.0003545

Published: June 2024

View article titled, Bacterial and corrosion resistance of polytetrafluoroethylene-silver composite coatings by magnetron sputtering

Journal Articles

Quantitative analysis of plasma-enhanced chemical vapor deposition mechanisms: Quantum chemical and plasma-fluid dynamics investigation on tetraethoxysilane/O₂ plasma

Hu Li, Kazuki Denpoh

J. Vac. Sci. Technol. A 42, 043002 (2024)

https://doi.org/10.1116/6.0003523

Published: May 2024

View article titled, Quantitative analysis of plasma-enhanced chemical vapor deposition mechanisms: Quantum chemical and plasma-fluid dynamics investigation on tetraethoxysilane/O2 plasma

Journal Articles

Comparison of three titanium-precursors for atomic-layer-deposited TiO₂ for passivating contacts on silicon

Daniel Hiller, Frans Munnik, Julian López-Vidrier, Dmytro Solonenko, Johanna Reif, Martin Knaut, Oliver Thimm, Nicholas E. Grant

J. Vac. Sci. Technol. A 42, 032406 (2024)

https://doi.org/10.1116/6.0003309

Published: March 2024

View article titled, Comparison of three titanium-precursors for atomic-layer-deposited TiO2 for passivating contacts on silicon

Includes: Supplementary data

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Effect of mask geometry on high aspect ratio silicon etching using Cl₂/O₂ plasma

Kinetics model for thermal selective etching of Si_1−xGe_x in F₂/Ar

In situ, simultaneous spectroscopic ellipsometry and quadrupole mass spectrometry studies of ZnO etching using Hacac and O₂ plasma

Enhanced tribocorrosive properties of precipitation-hardened martensitic stainless steel by arc plasma nitriding

SiO₂ atomic-layer fluorination-passivation for dual-material molybdenum/polypyrrole area-selective deposition and strategies for surface reactivation

Spatial atomic layer deposition: Transport-reaction modeling and experimental validation of film geometry

Metallic molybdenum obtained by atomic layer deposition from Mo(CO)₆

Area selective PECVD on metal oxide resist

Investigation of ruthenium etching induced by electron beam irradiation and O₂/Cl₂ remote plasma-based neutral fluxes: Mechanistic insights and etching model

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. I. Modeling framework and simulation

Selective molecular gas phase etching in layered high aspect-ratio nanostructures for semiconductor processing. II. Experiments and model validation

Etching and fluorination of yttrium oxide (Y₂O₃) irradiated with fluorine ions or radicals

Modeling scale-up of particle coating by atomic layer deposition

Surface passivation approaches for silicon, germanium, and III–V semiconductors

Substrate induced composition change during Ge₂Sb₂Te₅ atomic layer deposition and study of initial reactions on SiO₂ surface

Revealing the controlling mechanisms of atomic layer etching for high-k dielectrics in conventional inductively coupled plasma etching tool

Mechanism study of H₂-plasma assisted Si₃N₄ layered etch

Bacterial and corrosion resistance of polytetrafluoroethylene-silver composite coatings by magnetron sputtering

Quantitative analysis of plasma-enhanced chemical vapor deposition mechanisms: Quantum chemical and plasma-fluid dynamics investigation on tetraethoxysilane/O₂ plasma

Comparison of three titanium-precursors for atomic-layer-deposited TiO₂ for passivating contacts on silicon

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