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Journal Articles

Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Romel Hidayat, Khabib Khumaini, Hye-Lee Kim, Tanzia Chowdhury, Tirta Rona Mayangsari, Seongjae Cho, Byungchul Cho, Sangjoon Park, Jongwan Jung, Won-Jun Lee

J. Vac. Sci. Technol. A 41, 032604 (2023)

https://doi.org/10.1116/6.0002433

Published: April 2023

View article titled, Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Includes: Supplementary data

Journal Articles

Neutral transport during etching of high aspect ratio features

Theodoros Panagopoulos, Thorsten Lill

J. Vac. Sci. Technol. A 41, 033006 (2023)

https://doi.org/10.1116/6.0002468

Published: April 2023

View article titled, Neutral transport during etching of high aspect ratio features

Journal Articles

In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor

Jan-Willem J. Clerix, Golnaz Dianat, Annelies Delabie, Gregory N. Parsons

J. Vac. Sci. Technol. A 41, 032406 (2023)

https://doi.org/10.1116/6.0002493

Published: March 2023

View article titled, In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor

Journal Articles

Dry etching in the presence of physisorption of neutrals at lower temperatures

Thorsten Lill, Ivan L. Berry, Meihua Shen, John Hoang, Andreas Fischer, Theo Panagopoulos, Jane P. Chang, Vahid Vahedi

J. Vac. Sci. Technol. A 41, 023005 (2023)

https://doi.org/10.1116/6.0002230

Published: February 2023

View article titled, Dry etching in the presence of physisorption of neutrals at lower temperatures

Journal Articles

Effects of metal redeposition in plasma sputtering

Kei Kiyokawa, Reiko Saito, Masato Morita, Tetsuo Sakamoto

J. Vac. Sci. Technol. A 40, 063009 (2022)

https://doi.org/10.1116/6.0002204

Published: November 2022

View article titled, Effects of metal redeposition in plasma sputtering

Includes: Supplementary data

Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori

J. Vac. Sci. Technol. A 40, 062601 (2022)

https://doi.org/10.1116/6.0002044

Published: October 2022

View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Journal Articles

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF₄/O₂ and Ar plasmas

G. Antoun, T. Tillocher, A. Girard, P. Lefaucheux, J. Faguet, H. Kim, D. Zhang, M. Wang, K. Maekawa, C. Cardinaud, R. Dussart

J. Vac. Sci. Technol. A 40, 052601 (2022)

https://doi.org/10.1116/6.0001885

Published: August 2022

View article titled, Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas

Journal Articles

Thermal atomic layer etching: A review

Andreas Fischer, Aaron Routzahn, Steven M. George, Thorsten Lill

J. Vac. Sci. Technol. A 39, 030801 (2021)

https://doi.org/10.1116/6.0000894

Published: March 2021

View article titled, Thermal atomic layer etching: A review

Journal Articles

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Wanxing Xu, Paul C. Lemaire, Kashish Sharma, Ryan J. Gasvoda, Dennis M. Hausmann, Sumit Agarwal

J. Vac. Sci. Technol. A 39, 032402 (2021)

https://doi.org/10.1116/6.0000699

Published: March 2021

View article titled, Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Journal Articles

Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors

Petro Deminskyi, Ali Haider, Hamit Eren, Talha M. Khan, Necmi Biyikli

J. Vac. Sci. Technol. A 39, 022402 (2021)

https://doi.org/10.1116/6.0000701

Published: January 2021

View article titled, Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors

Includes: Supplementary data

Journal Articles

Theoretical study of the adsorption of Lewis acids on MoS₂ in relation to atomic layer deposition of Al₂O₃

Victor M. Bermudez

J. Vac. Sci. Technol. A 38, 062412 (2020)

https://doi.org/10.1116/6.0000467

Published: November 2020

View article titled, Theoretical study of the adsorption of Lewis acids on MoS2 in relation to atomic layer deposition of Al2O3

Includes: Supplementary data

Journal Articles

Investigation of TiN film on an RF ceramic window by atomic layer deposition

Zhen Peng, Gen Chen, Yan-Ping Zhao, Xin Zhang, Yun-Tao Song, Grigori Shirkov, Galina Karamysheva, Oleg Karamyshev, Luciano Calabretta, Antonio Caruso

J. Vac. Sci. Technol. A 38, 052401 (2020)

https://doi.org/10.1116/6.0000159

Published: July 2020

View article titled, Investigation of TiN film on an RF ceramic window by atomic layer deposition

Includes: Supplementary data

Journal Articles

Role of physisorption in atomic layer etching of silicon nitride

Shyam Sridhar, Peter L. G. Ventzek, Alok Ranjan

J. Vac. Sci. Technol. A 38, 043007 (2020)

https://doi.org/10.1116/6.0000154

Published: June 2020

View article titled, Role of physisorption in atomic layer etching of silicon nitride

Journal Articles

Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides

Taewook Nam, Seunggi Seo, Hyungjun Kim

J. Vac. Sci. Technol. A 38, 030803 (2020)

https://doi.org/10.1116/6.0000068

Published: April 2020

View article titled, Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides

Journal Articles

Consistency and reproducibility in atomic layer deposition

Henrik H. Sønsteby, Angel Yanguas-Gil, Jeffrey W. Elam

J. Vac. Sci. Technol. A 38, 020804 (2020)

https://doi.org/10.1116/1.5140603

Published: February 2020

View article titled, Consistency and reproducibility in atomic layer deposition

Journal Articles

Cryopumping of hydrogen on stainless steel in the temperature range between 7 and 18 K

Frederic Chill, Stefan Wilfert, Lars Bozyk

J. Vac. Sci. Technol. A 37, 031601 (2019)

https://doi.org/10.1116/1.5086164

Published: March 2019

View article titled, Cryopumping of hydrogen on stainless steel in the temperature range between 7 and 18 K

Journal Articles

Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Tanzia Chowdhury, Romel Hidayat, Tirta Rona Mayangsari, Jiyeon Gu, Hye-Lee Kim, Jongwan Jung, Won-Jun Lee

J. Vac. Sci. Technol. A 37, 021001 (2019)

https://doi.org/10.1116/1.5081490

Published: January 2019

View article titled, Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Journal Articles

Atomic layer deposition of Al₂O₃ and TiO₂ on MoS₂ surfaces

Jaron A. Kropp, Yuhang Cai, Zihan Yao, Wenjuan Zhu, Theodosia Gougousi

J. Vac. Sci. Technol. A 36, 06A101 (2018)

https://doi.org/10.1116/1.5043621

Published: October 2018

View article titled, Atomic layer deposition of Al2O3 and TiO2 on MoS2 surfaces

Includes: Supplementary data

Journal Articles

Multiple water layers on AnO₂ {111}, {110}, and {100} surfaces (An = U, Pu): A computational study

Bengt E. Tegner, Nikolas Kaltsoyannis

J. Vac. Sci. Technol. A 36, 041402 (2018)

https://doi.org/10.1116/1.5028210

Published: June 2018

View article titled, Multiple water layers on AnO2 {111}, {110}, and {100} surfaces (An = U, Pu): A computational study

Includes: Supplementary data

Journal Articles

Bound nuclear spin states of H₂ in an anisotropic potential induced by a stepped metal surface

Elvis F. Arguelles, Hideaki Kasai

J. Vac. Sci. Technol. A 36, 030601 (2018)

https://doi.org/10.1116/1.5023158

Published: March 2018

View article titled, Bound nuclear spin states of H2 in an anisotropic potential induced by a stepped metal surface

NARROW

Topics

Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Neutral transport during etching of high aspect ratio features

In situ analysis of nucleation reactions during TiCl₄/H₂O atomic layer deposition on SiO₂ and H-terminated Si surfaces treated with a silane small molecule inhibitor

Dry etching in the presence of physisorption of neutrals at lower temperatures

Effects of metal redeposition in plasma sputtering

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF₄/O₂ and Ar plasmas

Thermal atomic layer etching: A review

Mechanism for growth initiation on aminosilane-functionalized SiO₂ during area-selective atomic layer deposition of ZrO₂

Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors

Theoretical study of the adsorption of Lewis acids on MoS₂ in relation to atomic layer deposition of Al₂O₃

Investigation of TiN film on an RF ceramic window by atomic layer deposition

Role of physisorption in atomic layer etching of silicon nitride

Atomic layer deposition of a uniform thin film on two-dimensional transition metal dichalcogenides

Consistency and reproducibility in atomic layer deposition

Cryopumping of hydrogen on stainless steel in the temperature range between 7 and 18 K

Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Atomic layer deposition of Al₂O₃ and TiO₂ on MoS₂ surfaces

Multiple water layers on AnO₂ {111}, {110}, and {100} surfaces (An = U, Pu): A computational study

Bound nuclear spin states of H₂ in an anisotropic potential induced by a stepped metal surface

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