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Journal Articles

Effects on graphene of electron irradiation at 25 keV and dosages up to 10¹⁸ electrons/cm²

I. A. Ojo, E. Hathaway, R. R. Gonzalez, P. R. Adhikari, V. Sathish, B. Kunam, Y. Khalid, J. Cui, W. Choi, J. M. Perez

J. Vac. Sci. Technol. A 41, 012201 (2023)

https://doi.org/10.1116/6.0002209

Published: December 2022

View article titled, Effects on graphene of electron irradiation at 25 keV and dosages up to 1018 electrons/cm2

Includes: Supplementary data

Journal Articles

Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Tanzia Chowdhury, Romel Hidayat, Tirta Rona Mayangsari, Jiyeon Gu, Hye-Lee Kim, Jongwan Jung, Won-Jun Lee

J. Vac. Sci. Technol. A 40, 047001 (2022)

https://doi.org/10.1116/6.0001965

Published: June 2022

View article titled, Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Journal Articles

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Romel Hidayat, Hye-Lee Kim, Hohoon Kim, Younghun Byun, Jongsoo Lee, Won-Jun Lee

J. Vac. Sci. Technol. A 39, 032410 (2021)

https://doi.org/10.1116/6.0000796

Published: March 2021

View article titled, Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Includes: Supplementary data

Journal Articles

Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Tanzia Chowdhury, Romel Hidayat, Tirta Rona Mayangsari, Jiyeon Gu, Hye-Lee Kim, Jongwan Jung, Won-Jun Lee

J. Vac. Sci. Technol. A 37, 021001 (2019)

https://doi.org/10.1116/1.5081490

Published: January 2019

View article titled, Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Journal Articles

Nanoscale investigation of Si nanoribbon growth on Ag(110)

Michel Daher Mansour, Romain Parret, Laurence Masson

J. Vac. Sci. Technol. A 36, 061402 (2018)

https://doi.org/10.1116/1.5041917

Published: September 2018

View article titled, Nanoscale investigation of Si nanoribbon growth on Ag(110)

Journal Articles

Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Yuri V. Barsukov, Vladimir Volynets, Anton A. Kobelev, Nikolai A. Andrianov, Alexander V. Tulub, Alexander S. Smirnov

J. Vac. Sci. Technol. A 36, 061301 (2018)

https://doi.org/10.1116/1.5044647

Published: August 2018

View article titled, Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Journal Articles

Nitrogen acceptor in 2H-polytype synthetic MoS₂ assessed by multifrequency electron spin resonance

Ben Schoenaers, Andre Stesmans, Valery V. Afanas’ev

J. Vac. Sci. Technol. A 36, 05G503 (2018)

https://doi.org/10.1116/1.5034447

Published: July 2018

View article titled, Nitrogen acceptor in 2H-polytype synthetic MoS2 assessed by multifrequency electron spin resonance

Journal Articles

Initial nucleation stage in photo-CVD of GeH₄ on SiO₂ substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time

Housei Akazawa

J. Vac. Sci. Technol. A 36, 041505 (2018)

https://doi.org/10.1116/1.5040380

Published: June 2018

View article titled, Initial nucleation stage in photo-CVD of GeH4 on SiO2 substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time

Journal Articles

Study of the high-temperature oxidation resistance mechanism of magnetron sputtered Hf₇B₂₃Si₁₇C₄N₄₅ film

Minghui Zhang, Jiechao Jiang, Petr Zeman, Šárka Zuzjaková, Jaroslav Vlček, Efstathios I. Meletis

J. Vac. Sci. Technol. A 36, 021505 (2018)

https://doi.org/10.1116/1.5004145

Published: December 2017

View article titled, Study of the high-temperature oxidation resistance mechanism of magnetron sputtered Hf7B23Si17C4N45 film

Journal Articles

Electronic transport and Raman spectroscopic properties of Co doped (110) PrBa₂Cu₃O₇ thin film

Hom Kandel, TarPin Chen, Zhongrui Li

J. Vac. Sci. Technol. A 36, 021502 (2018)

https://doi.org/10.1116/1.4999811

Published: November 2017

View article titled, Electronic transport and Raman spectroscopic properties of Co doped (110) PrBa2Cu3O7 thin film

Journal Articles

Role of NO in highly selective SiN/SiO₂ and SiN/Si etching with NF₃/O₂ remote plasma: Experiment and simulation

Yuri Barsukov, Vladimir Volynets, Sangjun Lee, Gonjun Kim, Byoungsu Lee, Sang Ki Nam, Kyuhee Han

J. Vac. Sci. Technol. A 35, 061310 (2017)

https://doi.org/10.1116/1.5004546

Published: October 2017

View article titled, Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

Journal Articles

Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O₂ plasma jet

Pingshan Luan, Andrew J. Knoll, Peter J. Bruggeman, Gottlieb S. Oehrlein

J. Vac. Sci. Technol. A 35, 05C315 (2017)

https://doi.org/10.1116/1.5000691

Published: August 2017

View article titled, Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O2 plasma jet

Journal Articles

XeF₂ etching of epitaxial Nb₂N for lift-off or micromachining of III-N materials and devices

Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 35, 05C312 (2017)

https://doi.org/10.1116/1.4994400

Published: July 2017

View article titled, XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Journal Articles

Effects of phosphorus and alkyl substituents on C–H, C–C, and C–O bond rupture within carboxylic acids on Ru(0001)

SiWei A. Chang, Vivek Vermani, David W. Flaherty

J. Vac. Sci. Technol. A 35, 05C309 (2017)

https://doi.org/10.1116/1.4990685

Published: July 2017

View article titled, Effects of phosphorus and alkyl substituents on C–H, C–C, and C–O bond rupture within carboxylic acids on Ru(0001)

Includes: Supplementary data

Journal Articles

Investigations of medium-temperature heat treatments to achieve low outgassing rates in stainless steel ultrahigh vacuum chambers

Makfir Sefa, James A. Fedchak, Julia Scherschligt

J. Vac. Sci. Technol. A 35, 041601 (2017)

https://doi.org/10.1116/1.4983211

Published: May 2017

View article titled, Investigations of medium-temperature heat treatments to achieve low outgassing rates in stainless steel ultrahigh vacuum chambers

Journal Articles

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Sonal Dey, Kai-Hung Yu, Steven Consiglio, Kandabara Tapily, Takahiro Hakamata, Cory S. Wajda, Gert J. Leusink, Jean Jordan-Sweet, Christian Lavoie, David Muir, Beatriz Moreno, Alain C. Diebold

J. Vac. Sci. Technol. A 35, 03E109 (2017)

https://doi.org/10.1116/1.4979709

Published: April 2017

View article titled, Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Includes: Supplementary data

Journal Articles

Effect of incubation time on preparation of continuous and flat Ru films

Hiroshi Funakubo, Takahisa Shiraishi, Takahiro Oikawa, Masaki Hirano, Hirokazu Chiba, Kazuhisa Kawano

J. Vac. Sci. Technol. A 33, 01A149 (2015)

https://doi.org/10.1116/1.4904494

Published: December 2014

View article titled, Effect of incubation time on preparation of continuous and flat Ru films

Journal Articles

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Lingcong Le, Xiaoguang He, Xiaojing Li, Y. T. Zhang, G. T. Du

J. Vac. Sci. Technol. A 33, 021505 (2015)

https://doi.org/10.1116/1.4904035

Published: December 2014

View article titled, Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Journal Articles

Gettering of hydrogen and methane from a helium gas mixture

Rosa Elia Cárdenas, Kenneth D. Stewart, Donald F. Cowgill

J. Vac. Sci. Technol. A 32, 060602 (2014)

https://doi.org/10.1116/1.4898204

Published: October 2014

View article titled, Gettering of hydrogen and methane from a helium gas mixture

Journal Articles

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si₃H₈ and PH₃

Byongju Kim, Hyunchul Jang, Sun-Wook Kim, Dae-Seop Byeon, Sangmo Koo, Jason S. Song, Dae-Hong Ko

J. Vac. Sci. Technol. A 32, 031510 (2014)

https://doi.org/10.1116/1.4870817

Published: April 2014

View article titled, Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si3H8 and PH3

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Topics

Effects on graphene of electron irradiation at 25 keV and dosages up to 10¹⁸ electrons/cm²

Erratum: “Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules” [J. Vac. Sci. Technol. A 37, 021001 (2019)]

Surface reaction of the hafnium precursor with a linked amido-cyclopentadienyl ligand: A density functional theory study

Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing molecules

Nanoscale investigation of Si nanoribbon growth on Ag(110)

Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation

Nitrogen acceptor in 2H-polytype synthetic MoS₂ assessed by multifrequency electron spin resonance

Initial nucleation stage in photo-CVD of GeH₄ on SiO₂ substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time

Study of the high-temperature oxidation resistance mechanism of magnetron sputtered Hf₇B₂₃Si₁₇C₄N₄₅ film

Electronic transport and Raman spectroscopic properties of Co doped (110) PrBa₂Cu₃O₇ thin film

Role of NO in highly selective SiN/SiO₂ and SiN/Si etching with NF₃/O₂ remote plasma: Experiment and simulation

Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O₂ plasma jet

XeF₂ etching of epitaxial Nb₂N for lift-off or micromachining of III-N materials and devices

Effects of phosphorus and alkyl substituents on C–H, C–C, and C–O bond rupture within carboxylic acids on Ru(0001)

Investigations of medium-temperature heat treatments to achieve low outgassing rates in stainless steel ultrahigh vacuum chambers

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Effect of incubation time on preparation of continuous and flat Ru films

Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

Gettering of hydrogen and methane from a helium gas mixture

Growth and electrical properties of in situ phosphorus-doped polycrystalline silicon films using Si₃H₈ and PH₃

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