Page 1 | Search Results | Journal of Vacuum Science & Technology A

1-20 of 362

Sort by

Sort Order Select

Journal Articles

Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Jomar U. Tercero, Michiro Isobe, Kazuhiro Karahashi, Magdaleno R. Vasquez, Jr., Satoshi Hamaguchi

J. Vac. Sci. Technol. A 42, 052603 (2024)

https://doi.org/10.1116/6.0003750

Published: August 2024

View article titled, Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Journal Articles

Inherent area selective deposition of silicon dioxide in multilayer 3D SiO_x–SiN_x stacks

Kartik Sondhi, Stephen Ross, Joyeeta Nag, X. C. Guo, Dexin Zhao, Adarsh Rajashekhar, Senaka Kanakamedala

J. Vac. Sci. Technol. A 42, 050403 (2024)

https://doi.org/10.1116/6.0003790

Published: August 2024

View article titled, Inherent area selective deposition of silicon dioxide in multilayer 3D SiOx–SiNx stacks

Journal Articles

Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor

Kiyoteru Kobayashi, Ryo Miyauchi, Kenshi Kimoto

J. Vac. Sci. Technol. A 42, 050402 (2024)

https://doi.org/10.1116/6.0003778

Published: July 2024

View article titled, Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor

Journal Articles

MoS₂-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

J. Patouillard, M. Bernard, S. Cadot, R. Gassilloud, N. Bernier, A. Grenier, A. Mantoux, E. Blanquet, F. Martin, C. Raynaud, F. Gianesello

J. Vac. Sci. Technol. A 42, 050401 (2024)

https://doi.org/10.1116/6.0003652

Published: July 2024

View article titled, MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

Journal Articles

Piezoelectric and elastic properties of Al_0.60Sc_0.40N thin films deposited on patterned metal electrodes

Marco Liffredo, Nan Xu, Silvan Stettler, Federico Peretti, Luis Guillermo Villanueva

J. Vac. Sci. Technol. A 42, 043404 (2024)

https://doi.org/10.1116/6.0003497

Published: May 2024

View article titled, Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

Journal Articles

Impact of Nb and Al content in arc evaporation targets on Ti_1−x−yAl_xNb_yN coating properties

Henry Dempwolf, Sinah Malz, Alexander Schacht, Christian Fabry, Axel Baumann, Olaf Kessler

J. Vac. Sci. Technol. A 42, 033102 (2024)

https://doi.org/10.1116/6.0003409

Published: March 2024

View article titled, Impact of Nb and Al content in arc evaporation targets on Ti1−x−yAlxNbyN coating properties

Journal Articles

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Partha Mukhopadhyay, Ivan Fletcher, Zuriel Caribe Couvertier, Brent Schwab, John Gumpher, Winston V. Schoenfeld, Jon Kretzschmar, Anton deVilliers, Jim Fulford

J. Vac. Sci. Technol. A 42, 032401 (2024)

https://doi.org/10.1116/6.0003405

Published: March 2024

View article titled, Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Journal Articles

MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

Guangying Wang, Yuting Li, Cheng Liu, Qinchen Lin, Surjava Sanyal, Chirag Gupta, Shubhra S. Pasayat

J. Vac. Sci. Technol. A 41, 062706 (2023)

https://doi.org/10.1116/6.0002996

Published: November 2023

View article titled, MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

Journal Articles

Mechanistic analysis on low temperature thermal atomic layer deposition of nitrides utilizing H₂S

Jinwoo Lee, Soo Hyun Lee, Bonggeun Shong

J. Vac. Sci. Technol. A 41, 062405 (2023)

https://doi.org/10.1116/6.0003041

Published: October 2023

View article titled, Mechanistic analysis on low temperature thermal atomic layer deposition of nitrides utilizing H2S

Journal Articles

Quasiatomic layer etching of silicon nitride enhanced by low temperature

Daniel N. Shanks, Rania K. Ahmed, John D. Femi-Oyetoro, Matthew R. Dickie, Andrew D. Beyer, Frank Greer

J. Vac. Sci. Technol. A 41, 052601 (2023)

https://doi.org/10.1116/6.0002846

Published: August 2023

View article titled, Quasiatomic layer etching of silicon nitride enhanced by low temperature

Journal Articles

Chemical conversion of MoS₂ thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

J. Patouillard, R. Gassilloud, F. Mercier, A. Mantoux, R. Boichot, A. Crisci, M. Bernard, N. Gauthier, S. Cadot, C. Raynaud, F. Gianesello, E. Blanquet

J. Vac. Sci. Technol. A 41, 052201 (2023)

https://doi.org/10.1116/6.0002678

Published: July 2023

View article titled, Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

Includes: Supplementary data

Journal Articles

Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Xuguang Luo, Xiong Zhang, Ruiting Fang, Lin Chen, Shenyu Xu, Jia Cui, Zhiyi Lou, Yifeng Xu, Shuchang Wang, Guohua Hu

J. Vac. Sci. Technol. A 41, 052705 (2023)

https://doi.org/10.1116/6.0002870

Published: July 2023

View article titled, Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Journal Articles

Low-temperature, single-source, chemical vapor deposition of molybdenum nitride thin films

Michael A. Land, Justin T. Lomax, Seán T. Barry

J. Vac. Sci. Technol. A 41, 053403 (2023)

https://doi.org/10.1116/6.0002830

Published: July 2023

View article titled, Low-temperature, single-source, chemical vapor deposition of molybdenum nitride thin films

Includes: Supplementary data

Journal Articles

Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma

Sen Chen, Jiaxuan Ren, Douhao Yang, Lijun Sang, Bowen Liu, Qiang Chen, Zhongwei Liu

J. Vac. Sci. Technol. A 41, 042401 (2023)

https://doi.org/10.1116/6.0002484

Published: May 2023

View article titled, Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma

Includes: Supplementary data

Journal Articles

Microkinetic based growth and property modeling of plasma enhanced atomic layer deposition silicon nitride thin film

Toshihiko Iwao, Tsung-Hsuan Yang, Gyeong S. Hwang, Peter L. G. Ventzek

J. Vac. Sci. Technol. A 41, 032410 (2023)

https://doi.org/10.1116/6.0002499

Published: May 2023

View article titled, Microkinetic based growth and property modeling of plasma enhanced atomic layer deposition silicon nitride thin film

Journal Articles

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF₆ plasma and Al(CH₃)₃

Haozhe Wang, Azmain Hossain, David Catherall, Austin J. Minnich

J. Vac. Sci. Technol. A 41, 032606 (2023)

https://doi.org/10.1116/6.0002476

Published: May 2023

View article titled, Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF6 plasma and Al(CH3)3

Journal Articles

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Clémence Badie, Héloïse Tissot, Beniamino Sciacca, Maïssa K. Barr, Julien Bachmann, Christophe Vallée, Gaël Gautier, Thomas Defforge, Vincent Astie, Jean-Manuel Decams, Mikhael Bechelany, Lionel Santinacci

J. Vac. Sci. Technol. A 41, 032401 (2023)

https://doi.org/10.1116/6.0002288

Published: March 2023

View article titled, Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Includes: Supplementary data

Journal Articles

On the limitations of thermal atomic layer deposition of InN using ammonia

Karl Rönnby, Henrik Pedersen, Lars Ojamäe

J. Vac. Sci. Technol. A 41, 020401 (2023)

https://doi.org/10.1116/6.0002355

Published: February 2023

View article titled, On the limitations of thermal atomic layer deposition of InN using ammonia

Includes: Supplementary data

Journal Articles

Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Zelong Fan, Zuoyan Qin, Lei Jin, Yuan Cao, Zhongyu Yue, Baikui Li, Honglei Wu, Zhenhua Sun

J. Vac. Sci. Technol. A 41, 013204 (2023)

https://doi.org/10.1116/5.0133162

Published: December 2022

View article titled, Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Includes: Supplementary data

Journal Articles

Determining role of W⁺ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

Xiao Li, Ivan Petrov, Lars Hultman, Grzegorz Greczynski

J. Vac. Sci. Technol. A 41, 013407 (2023)

https://doi.org/10.1116/6.0002320

Published: December 2022

View article titled, Determining role of W+ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

NARROW

Topics

Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Inherent area selective deposition of silicon dioxide in multilayer 3D SiO_x–SiN_x stacks

Influence of high-temperature thermal annealing on paramagnetic point defects in silicon-rich silicon nitride films formed in a single-wafer-type low-pressure chemical vapor deposition reactor

MoS₂-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

Piezoelectric and elastic properties of Al_0.60Sc_0.40N thin films deposited on patterned metal electrodes

Impact of Nb and Al content in arc evaporation targets on Ti_1−x−yAl_xNb_yN coating properties

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

MOCVD grown ultraviolet microlight-emitting diodes with an InGaN/GaN/AlGaN active region design

Mechanistic analysis on low temperature thermal atomic layer deposition of nitrides utilizing H₂S

Quasiatomic layer etching of silicon nitride enhanced by low temperature

Chemical conversion of MoS₂ thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements

Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Low-temperature, single-source, chemical vapor deposition of molybdenum nitride thin films

Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma

Microkinetic based growth and property modeling of plasma enhanced atomic layer deposition silicon nitride thin film

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF₆ plasma and Al(CH₃)₃

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

On the limitations of thermal atomic layer deposition of InN using ammonia

Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Determining role of W⁺ ions in the densification of TiAlWN thin films grown by hybrid HiPIMS/DCMS technique with no external heating

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only