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Journal Articles

Electron-enhanced SiO2 atomic layer deposition at 35 °C using disilane and ozone or water as reactants

Jonas C. Gertsch, Zachary C. Sobell, Andrew S. Cavanagh, Harsono Simka, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042404 (2023)
https://doi.org/10.1116/6.0002726
Published: June 2023
View article titled, Electron-enhanced SiO<sub>2</sub> atomic layer deposition at 35 °C using disilane and ozone or water as reactants
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Journal Articles

Vapor-phase grafting of functional silanes on atomic layer deposited Al2O3

Vepa Rozyyev, Rahul Shevate, Rajesh Pathak, Julia G. Murphy, Anil U. Mane, S. J. Sibener, Jeffrey W. Elam
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032408 (2023)
https://doi.org/10.1116/6.0002364
Published: April 2023
View article titled, Vapor-phase grafting of functional silanes on atomic layer deposited Al<sub>2</sub>O<sub>3</sub>
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Includes: Supplementary data
Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Published: October 2022
View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
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Journal Articles

On the interplay between a novel iron and iron-carbide atomic layer deposition process, the carbon nanotube growth, and the metal–carbon nanotube coating properties on silica substrates

Tairan da Cunha, Noureddine Adjeroud, Jérôme Guillot, Benoit Duez, Damien Lenoble, Didier Arl
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 033415 (2022)
https://doi.org/10.1116/6.0001806
Published: April 2022
View article titled, On the interplay between a novel iron and iron-carbide atomic layer deposition process, the carbon nanotube growth, and the metal–carbon nanotube coating properties on silica substrates
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Journal Articles

Experimental and theoretical investigation of the formation of two-dimensional Fe silicate on Pd(111)

Nassar Doudin, Kayahan Saritas, Sohrab Ismail-Beigi, Eric I. Altman
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 062201 (2021)
https://doi.org/10.1116/6.0001397
Published: November 2021
View article titled, Experimental and theoretical investigation of the formation of two-dimensional Fe silicate on Pd(111)
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Journal Articles

Thermally activated nucleation and growth of cobalt and nickel oxide nanoparticles on porous silica

Vijayakumar Murugesan, Michel Gray, Mond Guo, Heather Job, Libor Kovarik, Arun Devaraj, Suntharampillai Thevuthasan, Karthikeyan K. Ramasamy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 031101 (2019)
https://doi.org/10.1116/1.5080448
Published: April 2019
View article titled, Thermally activated nucleation and growth of cobalt and nickel oxide nanoparticles on porous silica
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Includes: Supplementary data
Journal Articles

Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition

Donghyuk Shin, Heungseop Song, Ji-eun Jeong, Heungsoo Park, Dae-Hong Ko
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 020902 (2019)
https://doi.org/10.1116/1.5079573
Published: January 2019
View article titled, Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
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Journal Articles

Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf0.5Al0.5O/Si gate stacks using Al2O3 passivation layer with various thickness

Juan Gao, Gang He, Die Wang, Shuang Liang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 011101 (2019)
https://doi.org/10.1116/1.5050642
Published: December 2018
View article titled, Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf<sub>0.5</sub>Al<sub>0.5</sub>O/Si gate stacks using Al<sub>2</sub>O<sub>3</sub> passivation layer with various thickness
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Journal Articles

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

Pramod Reddy, Shun Washiyama, Will Mecouch, Luis H. Hernandez-Balderrama, Felix Kaess, M. Hayden Breckenridge, Biplab Sarkar, Brian B. Haidet, Alexander Franke, Erhard Kohn, Ramon Collazo, Zlatko Sitar
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 061101 (2018)
https://doi.org/10.1116/1.5050501
Published: November 2018
View article titled, Plasma enhanced chemical vapor deposition of SiO<sub>2</sub> and SiN<sub>x</sub> on AlGaN: Band offsets and interface studies as a function of Al composition
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Journal Articles

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Chad M. Huard, Saravanapriyan Sriraman, Alex Paterson, Mark J. Kushner
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 06B101 (2018)
https://doi.org/10.1116/1.5049225
Published: October 2018
View article titled, Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
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Journal Articles

Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO

Violeta Prodanovic´, Hong Wah Chan, Anil U. Mane, Jeffrey W. Elam, Matthias M. Minjauw, Christophe Detavernier, Harry van der Graaf, Pasqualina M. Sarro
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 06A102 (2018)
https://doi.org/10.1116/1.5040813
Published: October 2018
View article titled, Effect of thermal annealing and chemical treatments on secondary electron emission properties of atomic layer deposited MgO
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Journal Articles

Silicon nitride-capped silicon nanocrystals via a nonthermal dual-plasma synthesis approach

Rajib Mandal, Kyle O’Shea, Rebecca Anthony
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 051303 (2018)
https://doi.org/10.1116/1.5039352
Published: August 2018
View article titled, Silicon nitride-capped silicon nanocrystals via a nonthermal dual-plasma synthesis approach
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Journal Articles

Growth of yttrium iron garnet on SiO2

Hadrian Renaldo O. Aquino, Sergei Rouvimov, Alexei Orlov, Wolfgang Porod, Gary H. Bernstein
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 031518 (2018)
https://doi.org/10.1116/1.5022483
Published: May 2018
View article titled, Growth of yttrium iron garnet on SiO<sub>2</sub>
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Journal Articles

Initial reactions of ultrathin HfO2 films by in situ atomic layer deposition: An in situ synchrotron photoemission spectroscopy study

Seok Hwan Kim, Wooseok Song, In Su Jeon, Sun Sook Lee, Taek-Mo Chung, Ki-Seok An
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 02D402 (2018)
https://doi.org/10.1116/1.5015946
Published: February 2018
View article titled, Initial reactions of ultrathin HfO<sub>2</sub> films by <em>in situ</em> atomic layer deposition: An <em>in situ</em> synchrotron photoemission spectroscopy study
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Journal Articles

Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel

Jae-Min Park, Seongyoon Kim, June Hwang, Won Seok Han, Wonyong Koh, Won-Jun Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 01A119 (2018)
https://doi.org/10.1116/1.5003388
Published: December 2017
View article titled, Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
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Journal Articles

Electron-enhanced atomic layer deposition of silicon thin films at room temperature

Jaclyn K. Sprenger, Huaxing Sun, Andrew S. Cavanagh, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 01A118 (2018)
https://doi.org/10.1116/1.5006696
Published: December 2017
View article titled, Electron-enhanced atomic layer deposition of silicon thin films at room temperature
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Journal Articles

Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li2Si2O5 to lithium-rich Li8SiO6

Jaclyn Coyle, Christopher Apblett, Michael Brumbach, James Ohlhausen, Conrad Stoldt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 061509 (2017)
https://doi.org/10.1116/1.4998726
Published: October 2017
View article titled, Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li<sub>2</sub>Si<sub>2</sub>O<sub>5</sub> to lithium-rich Li<sub>8</sub>SiO<sub>6</sub>
Open the PDF for Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li<sub>2</sub>Si<sub>2</sub>O<sub>5</sub> to lithium-rich Li<sub>8</sub>SiO<sub>6</sub> in another window
Includes: Supplementary data
Journal Articles

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Sonal Dey, Kai-Hung Yu, Steven Consiglio, Kandabara Tapily, Takahiro Hakamata, Cory S. Wajda, Gert J. Leusink, Jean Jordan-Sweet, Christian Lavoie, David Muir, Beatriz Moreno, Alain C. Diebold
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 03E109 (2017)
https://doi.org/10.1116/1.4979709
Published: April 2017
View article titled, Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
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Includes: Supplementary data
Journal Articles

Atomic layer etching in close-to-conventional plasma etch tools

Andy Goodyear, Mike Cooke
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 01A105 (2017)
https://doi.org/10.1116/1.4972393
Published: December 2016
View article titled, Atomic layer etching in close-to-conventional plasma etch tools
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Journal Articles

Disilane addition versus silane-hydrogen flow rate effect on the PECVD of silicon thin films

Panagiotis Dimitrakellis, Eleftherios Amanatides, Dimitrios Mataras, Angelos G. Kalampounias, Nikolaos Spiliopoulos, Vanina Lahootun, François Coeuret, Alain Madec
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 061307 (2016)
https://doi.org/10.1116/1.4966957
Published: November 2016
View article titled, Disilane addition versus silane-hydrogen flow rate effect on the PECVD of silicon thin films
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