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Journal Articles

Growth of p-doped 2D- Mo S 2 on A l 2 O 3 from spatial atomic layer deposition

André Maas, Kissan Mistry, Stephan Sleziona, Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Kevin P. Musselman, Marika Schleberger

J. Vac. Sci. Technol. A 42, 022202 (2024)

https://doi.org/10.1116/6.0003248

Published: February 2024

View article titled, Growth of p-doped 2D- Mo S 2 on A l 2 O 3 from spatial atomic layer deposition

Includes: Supplementary data

Journal Articles

Atomic layer etching of indium tin oxide

Christoffer Kauppinen

J. Vac. Sci. Technol. A 42, 022601 (2024)

https://doi.org/10.1116/6.0003170

Published: January 2024

View article titled, Atomic layer etching of indium tin oxide

Includes: Supplementary data

Journal Articles

Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Changyong Oh, Hyeong Wook Kim, Myeong Woo Ju, Jun Ho Song, Bo Sung Kim

J. Vac. Sci. Technol. A 41, 053007 (2023)

https://doi.org/10.1116/6.0002798

Published: August 2023

View article titled, Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Journal Articles

Etching of molybdenum via a combination of low-temperature ozone oxidation and wet-chemical oxide dissolution

Antoine Pacco, Teppei Nakano, Shota Iwahata, Akihisa Iwasaki, Efrain Altamirano Sanchez

J. Vac. Sci. Technol. A 41, 032601 (2023)

https://doi.org/10.1116/6.0002404

Published: March 2023

View article titled, Etching of molybdenum via a combination of low-temperature ozone oxidation and wet-chemical oxide dissolution

Includes: Supplementary data

Journal Articles

Inhibition of the atomic layer deposition of ZnO and SnO₂ using a vapor-based polymer thin film

Raphaël Feougier, Chloe Guerin, Vincent Jousseaume

J. Vac. Sci. Technol. A 41, 012404 (2023)

https://doi.org/10.1116/6.0002248

Published: December 2022

View article titled, Inhibition of the atomic layer deposition of ZnO and SnO2 using a vapor-based polymer thin film

Journal Articles

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Jake Soares, Steven Letourneau, Matthew Lawson, Anil U. Mane, Yu Lu, Yaqiao Wu, Steven M. Hues, Lan Li, Jeffrey W. Elam, Elton Graugnard

J. Vac. Sci. Technol. A 40, 062202 (2022)

https://doi.org/10.1116/6.0002024

Published: November 2022

View article titled, Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Includes: Supplementary data

Journal Articles

Atomically precise deposition of (Er_0.1Y_0.9)₂SiO₅ combined with digitally processed DC sputtering and non-radical oxidation

Ghent Nakamura, Hideo Isshiki

J. Vac. Sci. Technol. A 40, 053406 (2022)

https://doi.org/10.1116/6.0001917

Published: September 2022

View article titled, Atomically precise deposition of (Er0.1Y0.9)2SiO5 combined with digitally processed DC sputtering and non-radical oxidation

Includes: Supplementary data

Journal Articles

Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption

Takeru Saito, Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose

J. Vac. Sci. Technol. A 40, 042406 (2022)

https://doi.org/10.1116/6.0001908

Published: June 2022

View article titled, Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption

Journal Articles

Area-selective atomic layer deposition of Al₂O₃ on SiN_x with SiO₂ as the nongrowth surface

Wanxing Xu, Ryan J. Gasvoda, Paul C. Lemaire, Kashish Sharma, Dennis M. Hausmann, Sumit Agarwal

J. Vac. Sci. Technol. A 40, 012403 (2022)

https://doi.org/10.1116/6.0001449

Published: December 2021

View article titled, Area-selective atomic layer deposition of Al2O3 on SiNx with SiO2 as the nongrowth surface

Includes: Supplementary data

Journal Articles

General method for predicting ZnO–metal interface termination: Extension of the method for Al₂O₃–metal systems

Michiko Yoshitake

J. Vac. Sci. Technol. A 39, 063217 (2021)

https://doi.org/10.1116/6.0001312

Published: October 2021

View article titled, General method for predicting ZnO–metal interface termination: Extension of the method for Al2O3–metal systems

Journal Articles

Hard x-ray photoelectron spectroscopy at a soft x-ray source: Present and future perspectives of hard x-ray photoelectron spectroscopy at BESSY II

Roberto Félix, Mihaela Gorgoi, Regan G. Wilks, Marcus Bär

J. Vac. Sci. Technol. A 39, 063208 (2021)

https://doi.org/10.1116/6.0001184

Published: September 2021

View article titled, Hard x-ray photoelectron spectroscopy at a soft x-ray source: Present and future perspectives of hard x-ray photoelectron spectroscopy at BESSY II

Journal Articles

Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen

Shuichi Ogawa, Ryo Taga, Akitaka Yoshigoe, Yuji Takakuwa

J. Vac. Sci. Technol. A 39, 043207 (2021)

https://doi.org/10.1116/6.0001056

Published: June 2021

View article titled, Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen

Includes: Supplementary data

Journal Articles

Band alignment modulation of atomic layer deposition-prepared Al₂O₃/β-Ga₂O₃ heterojunction interface by deposition temperature

Shun Zhou, Hao Liu, Linpeng Dong, Weiguo Liu, Shigeng Song, Wenjun Liu

J. Vac. Sci. Technol. A 39, 030403 (2021)

https://doi.org/10.1116/6.0000951

Published: March 2021

View article titled, Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature

Journal Articles

Selective chemical vapor deposition of HfB₂ on Al₂O₃ over SiO₂ and the acceleration of nucleation on SiO₂ by pretreatment with Hf[N(CH₃)₂]₄

Zhejun V. Zhang, Sumeng Liu, Gregory S. Girolami, John R. Abelson

J. Vac. Sci. Technol. A 39, 023415 (2021)

https://doi.org/10.1116/6.0000691

Published: March 2021

View article titled, Selective chemical vapor deposition of HfB2 on Al2O3 over SiO2 and the acceleration of nucleation on SiO2 by pretreatment with Hf[N(CH3)2]4

Includes: Supplementary data

Journal Articles

Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering

Gavin Yeung, Colin A. Wolden

J. Vac. Sci. Technol. A 39, 022802 (2021)

https://doi.org/10.1116/6.0000784

Published: February 2021

View article titled, Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering

Journal Articles

Preferential sputtering of metal oxide mixture thin films

Mathias Mende, Florian Carstens, Henrik Ehlers, Detlev Ristau

J. Vac. Sci. Technol. A 39, 023406 (2021)

https://doi.org/10.1116/6.0000799

Published: January 2021

View article titled, Preferential sputtering of metal oxide mixture thin films

Journal Articles

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono

J. Vac. Sci. Technol. A 39, 012401 (2021)

https://doi.org/10.1116/6.0000626

Published: December 2020

View article titled, Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

Journal Articles

Theoretical study of the adsorption of Lewis acids on MoS₂ in relation to atomic layer deposition of Al₂O₃

Victor M. Bermudez

J. Vac. Sci. Technol. A 38, 062412 (2020)

https://doi.org/10.1116/6.0000467

Published: November 2020

View article titled, Theoretical study of the adsorption of Lewis acids on MoS2 in relation to atomic layer deposition of Al2O3

Includes: Supplementary data

Journal Articles

On the response of gamma irradiation on atomic layer deposition-grown β-Ga₂O₃ films and Au-β-Ga₂O₃-Au deep ultraviolet solar-blind photodetectors

Chun-Ying Huang, Guan-Yu Lin, Yen-Yang Liu, Fu-Yuan Chang, Pei-Te Lin, Feng-Hsuan Hsu, Yu-Hsiang Peng, Zi-Ling Huang, Tai-Yuan Lin, Jyh-Rong Gong

J. Vac. Sci. Technol. A 38, 062409 (2020)

https://doi.org/10.1116/6.0000512

Published: November 2020

View article titled, On the response of gamma irradiation on atomic layer deposition-grown β-Ga2O3 films and Au-β-Ga2O3-Au deep ultraviolet solar-blind photodetectors

Journal Articles

The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxides

Andrea E. A. Bracesco, Claire H. Burgess, Anna Todinova, Valerio Zardetto, Dibyashree Koushik, Wilhelmus M. M (Erwin) Kessels, Ilker Dogan, Christ H. L. Weijtens, Sjoerd Veenstra, Ronn Andriessen, Mariadriana Creatore

J. Vac. Sci. Technol. A 38, 063206 (2020)

https://doi.org/10.1116/6.0000447

Published: October 2020

View article titled, The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxides

Includes: Supplementary data

NARROW

Topics

Growth of p-doped 2D- Mo S 2 on A l 2 O 3 from spatial atomic layer deposition

Atomic layer etching of indium tin oxide

Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Etching of molybdenum via a combination of low-temperature ozone oxidation and wet-chemical oxide dissolution

Inhibition of the atomic layer deposition of ZnO and SnO₂ using a vapor-based polymer thin film

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Atomically precise deposition of (Er_0.1Y_0.9)₂SiO₅ combined with digitally processed DC sputtering and non-radical oxidation

Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption

Area-selective atomic layer deposition of Al₂O₃ on SiN_x with SiO₂ as the nongrowth surface

General method for predicting ZnO–metal interface termination: Extension of the method for Al₂O₃–metal systems

Hard x-ray photoelectron spectroscopy at a soft x-ray source: Present and future perspectives of hard x-ray photoelectron spectroscopy at BESSY II

Two-step model for reduction reaction of ultrathin nickel oxide by hydrogen

Band alignment modulation of atomic layer deposition-prepared Al₂O₃/β-Ga₂O₃ heterojunction interface by deposition temperature

Selective chemical vapor deposition of HfB₂ on Al₂O₃ over SiO₂ and the acceleration of nucleation on SiO₂ by pretreatment with Hf[N(CH₃)₂]₄

Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering

Preferential sputtering of metal oxide mixture thin films

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Theoretical study of the adsorption of Lewis acids on MoS₂ in relation to atomic layer deposition of Al₂O₃

On the response of gamma irradiation on atomic layer deposition-grown β-Ga₂O₃ films and Au-β-Ga₂O₃-Au deep ultraviolet solar-blind photodetectors

The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxides

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