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Journal Articles

Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions

Gilles Delie, Peter M. Litwin, Gaby C. Abad, Stephen J. McDonnell, Daniele Chiappe, Valeri V. Afanasiev

J. Vac. Sci. Technol. A 40, 062201 (2022)

https://doi.org/10.1116/6.0001987

Published: September 2022

View article titled, Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions

Journal Articles

Role of physisorption in atomic layer etching of silicon nitride

Shyam Sridhar, Peter L. G. Ventzek, Alok Ranjan

J. Vac. Sci. Technol. A 38, 043007 (2020)

https://doi.org/10.1116/6.0000154

Published: June 2020

View article titled, Role of physisorption in atomic layer etching of silicon nitride

Journal Articles

Mass spectrometric method for estimating dissociation rates in hydrogen discharge plasmas

A. Cotter, Alexander Stowell, John Carlson, James R. Doyle

J. Vac. Sci. Technol. A 36, 031304 (2018)

https://doi.org/10.1116/1.5020723

Published: April 2018

View article titled, Mass spectrometric method for estimating dissociation rates in hydrogen discharge plasmas

Journal Articles

Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017

J. E. Greene

J. Vac. Sci. Technol. A 35, 05C204 (2017)

https://doi.org/10.1116/1.4998940

Published: September 2017

View article titled, Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017

Journal Articles

Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson, Mark J. Kushner

J. Vac. Sci. Technol. A 35, 05C301 (2017)

https://doi.org/10.1116/1.4973953

Published: January 2017

View article titled, Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Journal Articles

Local structure study of (In_0.95−xFe_xCu_0.05)₂O₃ thin films using x-ray absorption spectroscopy

Yuan Ren, Yaya Xing, Guanxiong Ma, Xingliang Zhao, Shiqi Wang, Yukai An, Jiwen Liu

J. Vac. Sci. Technol. A 33, 041513 (2015)

https://doi.org/10.1116/1.4922643

Published: June 2015

View article titled, Local structure study of (In0.95−xFexCu0.05)2O3 thin films using x-ray absorption spectroscopy

Journal Articles

Etching mechanism of the single-step through-silicon-via dry etch using SF₆/C₄F₈ chemistry

Zihao Ouyang, D. N. Ruzic, Mark Kiehlbauch, Alex Schrinsky, Kevin Torek

J. Vac. Sci. Technol. A 32, 041306 (2014)

https://doi.org/10.1116/1.4885500

Published: June 2014

View article titled, Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry

Journal Articles

Soft x-ray appearance potential spectroscopy study of MgO (100) and α-Al₂O₃ (100) single crystals

Yasuo Fukuda, Noriaki Sanada, Sachie Mochizuki, Ikuko Yatsuzuka

J. Vac. Sci. Technol. A 31, 06F110 (2013)

https://doi.org/10.1116/1.4828785

Published: November 2013

View article titled, Soft x-ray appearance potential spectroscopy study of MgO (100) and α-Al2O3 (100) single crystals

Journal Articles

Material dependence of argon cluster ion sputter yield in polymers: Method and measurements of relative sputter yields for 19 polymers

Peter J. Cumpson, Jose F. Portoles, Naoko Sano

J. Vac. Sci. Technol. A 31, 020605 (2013)

https://doi.org/10.1116/1.4791669

Published: February 2013

View article titled, Material dependence of argon cluster ion sputter yield in polymers: Method and measurements of relative sputter yields for 19 polymers

Journal Articles

Reaction mechanisms of oxygen plasma interaction with organosilicate low-k materials containing organic crosslinking groups

Mrunalkumar Chaudhari, Jincheng Du

J. Vac. Sci. Technol. A 30, 061302 (2012)

https://doi.org/10.1116/1.4755898

Published: October 2012

View article titled, Reaction mechanisms of oxygen plasma interaction with organosilicate low-k materials containing organic crosslinking groups

Journal Articles

Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas

Hyungjoo Shin, Weiye Zhu, Vincent M. Donnelly, Demetre J. Economou

J. Vac. Sci. Technol. A 30, 021306 (2012)

https://doi.org/10.1116/1.3681285

Published: February 2012

View article titled, Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas

Journal Articles

Modeling of implantation and mixing damage during etching of SiO₂ over Si in fluorocarbon plasmas

Mingmei Wang, Mark J. Kushner

J. Vac. Sci. Technol. A 29, 051306 (2011)

https://doi.org/10.1116/1.3626533

Published: August 2011

View article titled, Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas

Journal Articles

Modelling of fluorine based high density plasma for the etching of silica glasses

Ludovic Lallement, Ahmed Rhallabi, Christophe Cardinaud, Marie Claude Peignon Fernandez

J. Vac. Sci. Technol. A 29, 051304 (2011)

https://doi.org/10.1116/1.3624786

Published: August 2011

View article titled, Modelling of fluorine based high density plasma for the etching of silica glasses

Journal Articles

Identification at high mass resolution of the positive ion at m / z 19 produced by electron-stimulated desorption: F + (rather than H 3 O + )

Peter Williams, Klaus Franzreb

J. Vac. Sci. Technol. A 28, 622–624 (2010)

https://doi.org/10.1116/1.3420442

Published: June 2010

View article titled, Identification at high mass resolution of the positive ion at m / z 19 produced by electron-stimulated desorption: F + (rather than H 3 O + )

Journal Articles

Etching of Si O 2 in C 4 F 8 ∕ Ar plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Wei Guo, Herbert H. Sawin

J. Vac. Sci. Technol. A 28, 250–258 (2010)

https://doi.org/10.1116/1.3290760

Published: February 2010

View article titled, Etching of Si O 2 in C 4 F 8 ∕ Ar plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Journal Articles

Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator

Wei Guo, Bo Bai, Herbert H. Sawin

J. Vac. Sci. Technol. A 27, 388–403 (2009)

https://doi.org/10.1116/1.3085722

Published: February 2009

View article titled, Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator

Journal Articles

Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms

Ryan M. Martin, Jane P. Chang

J. Vac. Sci. Technol. A 27, 224–229 (2009)

https://doi.org/10.1116/1.3065705

Published: February 2009

View article titled, Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms

Journal Articles

Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms

Ryan M. Martin, Hans-Olof Blom, Jane P. Chang

J. Vac. Sci. Technol. A 27, 217–223 (2009)

https://doi.org/10.1116/1.3065695

Published: February 2009

View article titled, Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms

Journal Articles

Effect of gas mixing ratio on etch behavior of Zr O 2 thin films in Cl 2 -based inductively coupled plasmas

Alexander Efremov, Nam-Ki Min, Sun Jin Yun, Kwang-Ho Kwon

J. Vac. Sci. Technol. A 26, 1480–1486 (2008)

https://doi.org/10.1116/1.2998806

Published: October 2008

View article titled, Effect of gas mixing ratio on etch behavior of Zr O 2 thin films in Cl 2 -based inductively coupled plasmas

Journal Articles

Surface reactions during low- k etching using H 2 ∕ N 2 plasma

Masanaga Fukasawa, Tetsuya Tatsumi, Keiji Oshima, Kazunori Nagahata, Saburo Uchida, Seigo Takashima, Masaru Hori, Yukihiro Kamide

J. Vac. Sci. Technol. A 26, 870–874 (2008)

https://doi.org/10.1116/1.2839764

Published: July 2008

View article titled, Surface reactions during low- k etching using H 2 ∕ N 2 plasma

NARROW

Topics

Variability of band alignment between WS₂ and SiO₂: Intrinsic versus extrinsic contributions

Role of physisorption in atomic layer etching of silicon nitride

Mass spectrometric method for estimating dissociation rates in hydrogen discharge plasmas

Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017

Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Local structure study of (In_0.95−xFe_xCu_0.05)₂O₃ thin films using x-ray absorption spectroscopy

Etching mechanism of the single-step through-silicon-via dry etch using SF₆/C₄F₈ chemistry

Soft x-ray appearance potential spectroscopy study of MgO (100) and α-Al₂O₃ (100) single crystals

Material dependence of argon cluster ion sputter yield in polymers: Method and measurements of relative sputter yields for 19 polymers

Reaction mechanisms of oxygen plasma interaction with organosilicate low-k materials containing organic crosslinking groups

Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas

Modeling of implantation and mixing damage during etching of SiO₂ over Si in fluorocarbon plasmas

Modelling of fluorine based high density plasma for the etching of silica glasses

Identification at high mass resolution of the positive ion at m / z 19 produced by electron-stimulated desorption: F + (rather than H 3 O + )

Etching of Si O 2 in C 4 F 8 ∕ Ar plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator

Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator

Plasma etching of Hf-based high- k thin films. Part III. Modeling the reaction mechanisms

Plasma etching of Hf-based high- k thin films. Part II. Ion-enhanced surface reaction mechanisms

Effect of gas mixing ratio on etch behavior of Zr O 2 thin films in Cl 2 -based inductively coupled plasmas

Surface reactions during low- k etching using H 2 ∕ N 2 plasma

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