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Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View article titled, Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules
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Journal Articles

Theoretical analysis of thermal spikes during ion bombardment of amorphous silicon nitride surfaces

Erik S. Cheng, Peter L. G. Ventzek, Gyeong S. Hwang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043207 (2023)
https://doi.org/10.1116/6.0002656
Published: June 2023
View article titled, Theoretical analysis of thermal spikes during ion bombardment of amorphous silicon nitride surfaces
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Includes: Supplementary data
Journal Articles

Control of the ion flux and energy distribution of dual-frequency capacitive RF plasmas by the variation of the driving voltages

Hwan Ho Kim, Ji Hyun Shin, Hae June Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023004 (2023)
https://doi.org/10.1116/6.0002242
Published: February 2023
View article titled, Control of the ion flux and energy distribution of dual-frequency capacitive RF plasmas by the variation of the driving voltages
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Journal Articles

Nonlinear effects in low-energy ion sputtering of solids

Yuriy Kudriavtsev, Rene Asomoza, Angelica Hernandez, Dmitry Yu. Kazantsev, Boris Ya. Ber, Alexander N. Gorokhov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 053203 (2020)
https://doi.org/10.1116/6.0000262
Published: July 2020
View article titled, Nonlinear effects in low-energy ion sputtering of solids
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Journal Articles

Formation of MoS2 from elemental Mo and S using reactive molecular dynamics simulations

Rimei Chen, Arben Jusufi, Alan Schilowitz, Ashlie Martini
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 022201 (2020)
https://doi.org/10.1116/1.5128377
Published: February 2020
View article titled, Formation of MoS<sub>2</sub> from elemental Mo and S using reactive molecular dynamics simulations
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Includes: Supplementary data
Journal Articles

Consistency and reproducibility in atomic layer deposition

Henrik H. Sønsteby, Angel Yanguas-Gil, Jeffrey W. Elam
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 020804 (2020)
https://doi.org/10.1116/1.5140603
Published: February 2020
View article titled, Consistency and reproducibility in atomic layer deposition
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Journal Articles

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

Dmitry Kalanov, André Anders, Carsten Bundesmann
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 051507 (2019)
https://doi.org/10.1116/1.5114973
Published: August 2019
View article titled, Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions
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Journal Articles

Argon clustering in silicon under low-energy irradiation: Molecular dynamics simulation with different Ar–Si potentials

Anastasia A. Sycheva, Ekaterina N. Voronina, Tatyana V. Rakhimova, Alexander T. Rakhimov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 061303 (2018)
https://doi.org/10.1116/1.5050325
Published: November 2018
View article titled, Argon clustering in silicon under low-energy irradiation: Molecular dynamics simulation with different Ar–Si potentials
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Journal Articles

Measurement and simulation of rarefied Couette Poiseuille flow with variable cross section

Christopher Huck, Heiko Pleskun, Andreas Brümmer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 031606 (2018)
https://doi.org/10.1116/1.5024899
Published: May 2018
View article titled, Measurement and simulation of rarefied Couette Poiseuille flow with variable cross section
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Journal Articles

Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures

Matthias C. Schwille, Timo Schössler, Jonas Barth, Martin Knaut, Florian Schön, Arnim Höchst, Martin Oettel, Johann W. Bartha
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 01B118 (2017)
https://doi.org/10.1116/1.4971196
Published: December 2016
View article titled, Experimental and simulation approach for process optimization of atomic layer deposited thin films in high aspect ratio 3D structures
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Journal Articles

Fluid simulation of the bias effect in inductive/capacitive discharges

Yu-Ru Zhang, Fei Gao, Xue-Chun Li, Annemie Bogaerts, You-Nian Wang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 061303 (2015)
https://doi.org/10.1116/1.4928033
Published: August 2015
View article titled, Fluid simulation of the bias effect in inductive/capacitive discharges
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Journal Articles

Nucleation of diindenoperylene and pentacene at thermal and hyperthermal incident kinetic energies

Edward R. Kish, Tushar V. Desai, Douglas R. Greer, Arthur R. Woll, James R. Engstrom
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 031511 (2015)
https://doi.org/10.1116/1.4916885
Published: April 2015
View article titled, Nucleation of diindenoperylene and pentacene at thermal and hyperthermal incident kinetic energies
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Includes: Supplementary data
Journal Articles

Measurements and modeling of the impact of weak magnetic fields on the plasma properties of a planar slot antenna driven plasma source

Jun Yoshikawa, Yoshio Susa, Peter L. G. Ventzek
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 031303 (2015)
https://doi.org/10.1116/1.4916018
Published: March 2015
View article titled, Measurements and modeling of the impact of weak magnetic fields on the plasma properties of a planar slot antenna driven plasma source
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Journal Articles

Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes

Kohei Mizotani, Michiro Isobe, Satoshi Hamaguchi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 021313 (2015)
https://doi.org/10.1116/1.4907724
Published: February 2015
View article titled, Molecular dynamic simulation of damage formation at Si vertical walls by grazing incidence of energetic ions in gate etching processes
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Journal Articles

On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach

Dongqing Pan, Lulu Ma, Yuanyuan Xie, Tien Chien Jen, Chris Yuan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 021511 (2015)
https://doi.org/10.1116/1.4905726
Published: January 2015
View article titled, On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach
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Journal Articles

Comprehensive computer model for magnetron sputtering. II. Charged particle transport

Francisco J. Jimenez, Steven K. Dew, David J. Field
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 061301 (2014)
https://doi.org/10.1116/1.4894270
Published: September 2014
View article titled, Comprehensive computer model for magnetron sputtering. II. Charged particle transport
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Journal Articles

Etching mechanism of the single-step through-silicon-via dry etch using SF6/C4F8 chemistry

Zihao Ouyang, D. N. Ruzic, Mark Kiehlbauch, Alex Schrinsky, Kevin Torek
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 041306 (2014)
https://doi.org/10.1116/1.4885500
Published: June 2014
View article titled, Etching mechanism of the single-step through-silicon-via dry etch using SF<sub>6</sub>/C<sub>4</sub>F<sub>8</sub> chemistry
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Journal Articles

Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties

Amand Pateau, Ahmed Rhallabi, Marie-Claude Fernandez, Mohamed Boufnichel, Fabrice Roqueta
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 021303 (2014)
https://doi.org/10.1116/1.4853675
Published: December 2013
View article titled, Modeling of inductively coupled plasma SF<sub>6</sub>/O<sub>2</sub>/Ar plasma discharge: Effect of O<sub>2</sub> on the plasma kinetic properties
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Journal Articles

Optimization of closed ion source for a high-sensitivity residual gas analyzer

Cheolsu Han, Jong Rok Ahn, Sang Jung Ahn, Chang Joon Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 021603 (2014)
https://doi.org/10.1116/1.4835635
Published: December 2013
View article titled, Optimization of closed ion source for a high-sensitivity residual gas analyzer
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Journal Articles

Ion optical effects in a low pressure rf plasma

Hans Oechsner, Hubert Paulus
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 31, 061309 (2013)
https://doi.org/10.1116/1.4823104
Published: September 2013
View article titled, Ion optical effects in a low pressure rf plasma
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