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Journal Articles

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Charles W. Magee, Temel H. Buyuklimanli

J. Vac. Sci. Technol. A 41, 043413 (2023)

https://doi.org/10.1116/6.0002844

Published: June 2023

View article titled, Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Journal Articles

Systematic compositional analysis of sputter-deposited boron-containing thin films

Babak Bakhit, Daniel Primetzhofer, Eduardo Pitthan, Mauricio A. Sortica, Eleni Ntemou, Johanna Rosen, Lars Hultman, Ivan Petrov, Grzegorz Greczynski

J. Vac. Sci. Technol. A 39, 063408 (2021)

https://doi.org/10.1116/6.0001234

Published: September 2021

View article titled, Systematic compositional analysis of sputter-deposited boron-containing thin films

Journal Articles

Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts

Yuta Nakagawa, Kazuhiro Gotoh, Markus Wilde, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami

J. Vac. Sci. Technol. A 38, 022415 (2020)

https://doi.org/10.1116/1.5134719

Published: February 2020

View article titled, Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts

Journal Articles

Effect of hydrogen plasma treatment on the passivation performance of TiO_x on crystalline silicon prepared by atomic layer deposition

Shinsuke Miyagawa, Kazuhiro Gotoh, Shohei Ogura, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami

J. Vac. Sci. Technol. A 38, 022410 (2020)

https://doi.org/10.1116/1.5134720

Published: January 2020

View article titled, Effect of hydrogen plasma treatment on the passivation performance of TiO<em><sub>x</sub></em> on crystalline silicon prepared by atomic layer deposition

Journal Articles

Hydrogen incorporation and release from nonevaporable getter coatings based on oxygen-free Pd/Ti thin films

Masuaki Matsumoto, Tomohiro Okada, Tetsuya Miyazawa, Kazuhiko Mase, Misao Yamanaka, Ayako Hashimoto, Markus Wilde, Katsuyuki Fukutani

J. Vac. Sci. Technol. A 37, 051601 (2019)

https://doi.org/10.1116/1.5108983

Published: July 2019

View article titled, Hydrogen incorporation and release from nonevaporable getter coatings based on oxygen-free Pd/Ti thin films

Journal Articles

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

Lakshmanan H. Vanamurthy, Mengbing Huang, Hassaram Bakhru, Toshiharu Furukawa, Nathaniel Berliner, Joshua Herman, Zhengmao Zhu, Paul Ronsheim, Bruce Doris

J. Vac. Sci. Technol. A 31, 031403 (2013)

https://doi.org/10.1116/1.4795208

Published: March 2013

View article titled, Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

Journal Articles

Comprehensive study of the p -type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

J. C. Fan, C. Y. Zhu, B. Yang, S. Fung, C. D. Beling, G. Brauer, W. Anwand, D. Grambole, W. Skorupa, K. S. Wong, Y. C. Zhong, Z. Xie, C. C. Ling

J. Vac. Sci. Technol. A 29, 03A103 (2011)

https://doi.org/10.1116/1.3525639

Published: January 2011

View article titled, Comprehensive study of the p -type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

Journal Articles

Tilted fiber texture in aluminum nitride thin films

D. Deniz, J. M. E. Harper, J. W. Hoehn, F. Chen

J. Vac. Sci. Technol. A 25, 1214–1218 (2007)

https://doi.org/10.1116/1.2712190

Published: July 2007

View article titled, Tilted fiber texture in aluminum nitride thin films

Journal Articles

Fluorine content of SiOF films as determined by IR spectroscopy and resonant nuclear reaction analysis

J. C. Alonso, X. M. Díaz-Bucio, A. Ortiz, A. Benami, J. C. Cheang-Wong, L. Rodríguez-Fernández

J. Vac. Sci. Technol. A 25, 448–454 (2007)

https://doi.org/10.1116/1.2712195

Published: March 2007

View article titled, Fluorine content of SiOF films as determined by IR spectroscopy and resonant nuclear reaction analysis

Journal Articles

Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

C. Durand, C. Vallée, C. Dubourdieu, M. Kahn, M. Derivaz, S. Blonkowski, D. Jalabert, P. Hollinger, Q. Fang, I. W. Boyd

J. Vac. Sci. Technol. A 24, 459–466 (2006)

https://doi.org/10.1116/1.2190649

Published: April 2006

View article titled, Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

Journal Articles

Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

H. Baumann, R. E. Sah

J. Vac. Sci. Technol. A 23, 545–550 (2005)

https://doi.org/10.1116/1.1901665

Published: April 2005

View article titled, Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

Journal Articles

Electron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing

Yoshito Jin, Masaru Shimada, Toshiro Ono

J. Vac. Sci. Technol. A 22, 2431–2436 (2004)

https://doi.org/10.1116/1.1809128

Published: October 2004

View article titled, Electron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing

Journal Articles

Intercomparison of silicon dioxide thickness measurements made by multiple techniques: The route to accuracy

M. P. Seah

J. Vac. Sci. Technol. A 22, 1564–1571 (2004)

https://doi.org/10.1116/1.1705594

Published: July 2004

View article titled, Intercomparison of silicon dioxide thickness measurements made by multiple techniques: The route to accuracy

Journal Articles

Study of the optical properties of SiO x N y thin films by effective medium theories

X. Tan, J. Wojcik, P. Mascher

J. Vac. Sci. Technol. A 22, 1115–1119 (2004)

https://doi.org/10.1116/1.1752898

Published: May 2004

View article titled, Study of the optical properties of SiO x N y thin films by effective medium theories

Journal Articles

Characterization of GaAs 1−x N x epitaxial layers by ion beam analysis

P. Wei, M. Chicoine, S. Gujrathi, F. Schiettekatte, J.-N. Beaudry, R. A. Masut, P. Desjardins

J. Vac. Sci. Technol. A 22, 908–911 (2004)

https://doi.org/10.1116/1.1648671

Published: May 2004

View article titled, Characterization of GaAs 1−x N x epitaxial layers by ion beam analysis

Journal Articles

Organometallic vapor phase epitaxy of GaAs 1−x N x alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

J.-N. Beaudry, R. A. Masut, P. Desjardins, P. Wei, M. Chicoine, G. Bentoumi, R. Leonelli, F. Schiettekatte, S. Guillon

J. Vac. Sci. Technol. A 22, 771–775 (2004)

https://doi.org/10.1116/1.1689296

Published: May 2004

View article titled, Organometallic vapor phase epitaxy of GaAs 1−x N x alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

Journal Articles

Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF 4 / NH 3 mixtures

J. Fandiño, A. Ortiz, L. Rodrı́guez-Fernandez, J. C. Alonso

J. Vac. Sci. Technol. A 22, 570–577 (2004)

https://doi.org/10.1116/1.1699335

Published: April 2004

View article titled, Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF 4 / NH 3 mixtures

Journal Articles

Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of CF 4 –CH 4 gas mixtures

L. G. Jacobsohn, D. F. Franceschini, M. E. H. Maia da Costa, F. L. Freire, Jr.

J. Vac. Sci. Technol. A 18, 2230–2238 (2000)

https://doi.org/10.1116/1.1289540

Published: September 2000

View article titled, Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of CF 4 –CH 4 gas mixtures

Journal Articles

Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide ( Ta 2 O 5 ) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF 5 ) source

E. Z. Luo, B. Sundaravel, H. Y. Guo, I. H. Wilson, S. Four, R. A. B. Devine

J. Vac. Sci. Technol. A 17, 3235–3239 (1999)

https://doi.org/10.1116/1.582048

Published: November 1999

View article titled, Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide ( Ta 2 O 5 ) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF 5 ) source

Journal Articles

Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy

J. R. Shallenberger, D. A. Cole, S. W. Novak

J. Vac. Sci. Technol. A 17, 1086–1090 (1999)

https://doi.org/10.1116/1.582038

Published: July 1999

View article titled, Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy

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Topics

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Systematic compositional analysis of sputter-deposited boron-containing thin films

Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts

Effect of hydrogen plasma treatment on the passivation performance of TiO_x on crystalline silicon prepared by atomic layer deposition

Hydrogen incorporation and release from nonevaporable getter coatings based on oxygen-free Pd/Ti thin films

Subnanometer-resolution depth profiling of boron atoms and lattice defects in silicon ultrashallow junctions by ion beam techniques

Comprehensive study of the p -type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

Tilted fiber texture in aluminum nitride thin films

Fluorine content of SiOF films as determined by IR spectroscopy and resonant nuclear reaction analysis

Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors

Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

Electron-cyclotron-resonance sputtering apparatus for multilayered optical bandpass filters applicable to wavelength division multiplexing

Intercomparison of silicon dioxide thickness measurements made by multiple techniques: The route to accuracy

Study of the optical properties of SiO x N y thin films by effective medium theories

Characterization of GaAs 1−x N x epitaxial layers by ion beam analysis

Organometallic vapor phase epitaxy of GaAs 1−x N x alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation

Composition, structural, and electrical properties of fluorinated silicon–nitride thin films grown by remote plasma-enhanced chemical-vapor deposition from SiF 4 / NH 3 mixtures

Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of CF 4 –CH 4 gas mixtures

Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide ( Ta 2 O 5 ) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF 5 ) source

Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy

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