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Journal Articles

Challenges and insights in growing epitaxial FeSn thin films on GaAs(111) substrate using molecular beam epitaxy

P. Chatterjee, M. Nord, J. He, D. Meier, C. Brüne

J. Vac. Sci. Technol. A 43, 022701 (2025)

https://doi.org/10.1116/6.0004238

Published: January 2025

View article titled, Challenges and insights in growing epitaxial FeSn thin films on GaAs(111) substrate using molecular beam epitaxy

Journal Articles

Synthesis of group-IV ternary and binary semiconductors using epitaxy of GeH₃Cl and SnH₄

Aixin Zhang, Dhruve A. Ringwala, Matthew A. Mircovich, Manuel A. Roldan, John Kouvetakis, José Menéndez

J. Vac. Sci. Technol. A 42, 062704 (2024)

https://doi.org/10.1116/6.0003991

Published: October 2024

View article titled, Synthesis of group-IV ternary and binary semiconductors using epitaxy of GeH3Cl and SnH4

Journal Articles

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

T. Pan Menasuta, Kevin A. Grossklaus, John H. McElearney, Thomas E. Vandervelde

J. Vac. Sci. Technol. A 42, 032703 (2024)

https://doi.org/10.1116/6.0003458

Published: April 2024

View article titled, Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Journal Articles

Structural and magnetic properties of Ni cluster embedded (111)NiO layers grown on (0001)GaN films

Simran Arora, Shivesh Yadav, Amandeep Kaur, Bhabani Prasad Sahu, Zainab Hussain, Subhabrata Dhar

J. Vac. Sci. Technol. A 42, 022706 (2024)

https://doi.org/10.1116/6.0003195

Published: February 2024

View article titled, Structural and magnetic properties of Ni cluster embedded (111)NiO layers grown on (0001)GaN films

Journal Articles

Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Xuguang Luo, Xiong Zhang, Ruiting Fang, Lin Chen, Shenyu Xu, Jia Cui, Zhiyi Lou, Yifeng Xu, Shuchang Wang, Guohua Hu

J. Vac. Sci. Technol. A 41, 052705 (2023)

https://doi.org/10.1116/6.0002870

Published: July 2023

View article titled, Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

Journal Articles

MBE growth of In_0.53Ga_0.47Sb on In_0.53Ga_0.47As/InP substrates using the interfacial misfit dislocation arrays

Fatih F. Ince, Mega Frost, Subhashree Seth, Darryl Shima, Thomas J. Rotter, Ganesh Balakrishnan

J. Vac. Sci. Technol. A 41, 052704 (2023)

https://doi.org/10.1116/6.0002681

Published: July 2023

View article titled, MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

Journal Articles

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck

J. Vac. Sci. Technol. A 41, 042709 (2023)

https://doi.org/10.1116/6.0002594

Published: June 2023

View article titled, N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Journal Articles

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 41, 042706 (2023)

https://doi.org/10.1116/6.0002530

Published: June 2023

View article titled, Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Journal Articles

Tunable emission from Eu:SiO_xN_y thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition

Fahmida Azmi, Yuxuan Gao, Zahra Khatami, Peter Mascher

J. Vac. Sci. Technol. A 40, 043402 (2022)

https://doi.org/10.1116/6.0001761

Published: May 2022

View article titled, Tunable emission from Eu:SiOxNy thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition

Journal Articles

Interface quality in GaSb/AlSb short period superlattices

Md Nazmul Alam, Joseph R. Matson, Patrick Sohr, Joshua D. Caldwell, Stephanie Law

J. Vac. Sci. Technol. A 39, 063406 (2021)

https://doi.org/10.1116/6.0001290

Published: September 2021

View article titled, Interface quality in GaSb/AlSb short period superlattices

Includes: Supplementary data

Journal Articles

Hybrid molecular beam epitaxy growth of BaTiO₃ films

William Nunn, Sara Sandlass, Maike Wegner, Ryan Haislmaier, Abinash Kumar, Malleswararao Tangi, James LeBeau, Eckhard Quandt, Richard D. James, Bharat Jalan

J. Vac. Sci. Technol. A 39, 040404 (2021)

https://doi.org/10.1116/6.0001140

Published: June 2021

View article titled, Hybrid molecular beam epitaxy growth of BaTiO3 films

Includes: Supplementary data

Journal Articles

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Rakesh Kumar Pandey, Puspashree Mishra, Akhilesh Pandey, Shankar Dutta, Aman Arora, Shyama Rath

J. Vac. Sci. Technol. A 39, 043413 (2021)

https://doi.org/10.1116/6.0000895

Published: June 2021

View article titled, Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Journal Articles

Multi-technique investigation of Ni-doped ZnO thin films on sapphire by metalorganic chemical vapor deposition

Jiwei Chen, Jiabin Wang, Vishal Saravade, Ian T. Ferguson, Weiguo Hu, Zhe Chuan Feng, Lingyu Wan

J. Vac. Sci. Technol. A 39, 023408 (2021)

https://doi.org/10.1116/6.0000816

Published: February 2021

View article titled, Multi-technique investigation of Ni-doped ZnO thin films on sapphire by metalorganic chemical vapor deposition

Journal Articles

Interface-induced ferromagnetism in μ-Fe₂O₃/β-Ga₂O₃ superlattices

Elline C. Hettiaratchy, John S. Jamison, Binbin Wang, Núria Bagués, Rachel A. Guest, David W. McComb, Roberto C. Myers

J. Vac. Sci. Technol. A 38, 063413 (2020)

https://doi.org/10.1116/6.0000612

Published: November 2020

View article titled, Interface-induced ferromagnetism in μ-Fe2O3/β-Ga2O3 superlattices

Journal Articles

Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism

Suparna Pal, Chandrachur Mukherjee, Vasant G. Sathe, Ravi Kumar, Pragya Tiwari, Vijay Kumar Dixit, Tarun Kumar Sharma

J. Vac. Sci. Technol. A 35, 061501 (2017)

https://doi.org/10.1116/1.4996104

Published: July 2017

View article titled, Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism

Journal Articles

Metamorphic growth of relaxed single crystalline aluminum on silicon (111)

Brian M. McSkimming, Ashish Alexander, Margaret H. Samuels, Bruce Arey, Ilke Arslan, Christopher J. K. Richardson

J. Vac. Sci. Technol. A 35, 021401 (2017)

https://doi.org/10.1116/1.4971200

Published: December 2016

View article titled, Metamorphic growth of relaxed single crystalline aluminum on silicon (111)

Journal Articles

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

KwaDwo Konadu Ansah-Antwi, Chew Beng Soh, Hongfei Liu, Soo Jin Chua

J. Vac. Sci. Technol. A 33, 061517 (2015)

https://doi.org/10.1116/1.4933201

Published: October 2015

View article titled, Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

Journal Articles

β-(Al_xGa_1−x)₂O₃/Ga₂O₃ (010) heterostructures grown on β-Ga₂O₃ (010) substrates by plasma-assisted molecular beam epitaxy

Stephen W. Kaun, Feng Wu, James S. Speck

J. Vac. Sci. Technol. A 33, 041508 (2015)

https://doi.org/10.1116/1.4922340

Published: June 2015

View article titled, β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

Journal Articles

Increased bismuth concentration in MBE GaAs_1−xBi_x films by oscillating III/V flux ratio during growth

Adam W. Wood, Susan E. Babcock, Jincheng Li, April S. Brown

J. Vac. Sci. Technol. A 33, 031506 (2015)

https://doi.org/10.1116/1.4916575

Published: March 2015

View article titled, Increased bismuth concentration in MBE GaAs1−xBix films by oscillating III/V flux ratio during growth

Journal Articles

Atomic layer deposition of epitaxial TiO₂ II on c-sapphire

Aivar Tarre, Kristel Möldre, Ahti Niilisk, Hugo Mändar, Jaan Aarik, Arnold Rosental

J. Vac. Sci. Technol. A 31, 01A118 (2013)

https://doi.org/10.1116/1.4764892

Published: November 2012

View article titled, Atomic layer deposition of epitaxial TiO2 II on c-sapphire

NARROW

Topics

Challenges and insights in growing epitaxial FeSn thin films on GaAs(111) substrate using molecular beam epitaxy

Synthesis of group-IV ternary and binary semiconductors using epitaxy of GeH₃Cl and SnH₄

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Structural and magnetic properties of Ni cluster embedded (111)NiO layers grown on (0001)GaN films

Enhanced structural and optical properties of semipolar ( 11 2 ¯ 2 ) AlGaN film with insertion of AlN/AlGaN superlattice

MBE growth of In_0.53Ga_0.47Sb on In_0.53Ga_0.47As/InP substrates using the interfacial misfit dislocation arrays

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Tunable emission from Eu:SiO_xN_y thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition

Interface quality in GaSb/AlSb short period superlattices

Hybrid molecular beam epitaxy growth of BaTiO₃ films

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Multi-technique investigation of Ni-doped ZnO thin films on sapphire by metalorganic chemical vapor deposition

Interface-induced ferromagnetism in μ-Fe₂O₃/β-Ga₂O₃ superlattices

Self-catalyst assisted and catalyst-free epitaxial growth of InAs on Ge (111): Role of substrate surface and evolution of polytypism

Metamorphic growth of relaxed single crystalline aluminum on silicon (111)

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

β-(Al_xGa_1−x)₂O₃/Ga₂O₃ (010) heterostructures grown on β-Ga₂O₃ (010) substrates by plasma-assisted molecular beam epitaxy

Increased bismuth concentration in MBE GaAs_1−xBi_x films by oscillating III/V flux ratio during growth

Atomic layer deposition of epitaxial TiO₂ II on c-sapphire

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