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Journal Articles

Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy

Joseph R. Vella, Qinzhen Hao, Vincent M. Donnelly, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062602 (2023)
https://doi.org/10.1116/6.0003011
Published: November 2023
View article titled, Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy
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Includes: Supplementary data
Journal Articles

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

Azmain A. Hossain, Haozhe Wang, David S. Catherall, Martin Leung, Harm C. M. Knoops, James R. Renzas, Austin J. Minnich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062601 (2023)
https://doi.org/10.1116/6.0002965
Published: September 2023
View article titled, Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF<sub>6</sub>/H<sub>2</sub> plasma
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Journal Articles

Quasiatomic layer etching of silicon nitride enhanced by low temperature

Daniel N. Shanks, Rania K. Ahmed, John D. Femi-Oyetoro, Matthew R. Dickie, Andrew D. Beyer, Frank Greer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052601 (2023)
https://doi.org/10.1116/6.0002846
Published: August 2023
View article titled, Quasiatomic layer etching of silicon nitride enhanced by low temperature
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Journal Articles

Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems

Lulu Guan, Xingyu Li, Chunxiang Guo, Xinying Shi, Kaidong Xu, Shiwei Zhuang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042603 (2023)
https://doi.org/10.1116/6.0002647
Published: June 2023
View article titled, Exploring the self-limiting atomic layer etching of AlGaN: A study of O<sub>2</sub>-BCl<sub>3</sub> and chlorinate-argon systems
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Includes: Supplementary data
Journal Articles

Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for atomic layer etching of TiO2 and ZrO2 using tungsten hexafluoride

Holger Saare, Wenyi Xie, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042602 (2023)
https://doi.org/10.1116/6.0002708
Published: June 2023
View article titled, Comparison of BCl<sub>3</sub>, TiCl<sub>4</sub>, and SOCl<sub>2</sub> chlorinating agents for atomic layer etching of TiO<sub>2</sub> and ZrO<sub>2</sub> using tungsten hexafluoride
Open the PDF for Comparison of BCl<sub>3</sub>, TiCl<sub>4</sub>, and SOCl<sub>2</sub> chlorinating agents for atomic layer etching of TiO<sub>2</sub> and ZrO<sub>2</sub> using tungsten hexafluoride in another window
Includes: Supplementary data
Journal Articles

Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations

Joseph R. Vella, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042601 (2023)
https://doi.org/10.1116/6.0002719
Published: June 2023
View article titled, Near-surface damage and mixing in Si-Cl<sub>2</sub>-Ar atomic layer etching processes: Insights from molecular dynamics simulations
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Journal Articles

Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness

J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden, F. J. Heremans
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032607 (2023)
https://doi.org/10.1116/6.0002447
Published: May 2023
View article titled, Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness
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Includes: Supplementary data
Journal Articles

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF6 plasma and Al(CH3)3

Haozhe Wang, Azmain Hossain, David Catherall, Austin J. Minnich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032606 (2023)
https://doi.org/10.1116/6.0002476
Published: May 2023
View article titled, Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF<sub>6</sub> plasma and Al(CH<sub>3</sub>)<sub>3</sub>
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Journal Articles

Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Qinzhen Hao, Pilbum Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032605 (2023)
https://doi.org/10.1116/6.0002482
Published: April 2023
View article titled, Real-time monitoring of atomic layer etching in Cl<sub>2</sub>/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy
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Journal Articles

Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition

Jessica A. Murdzek, Ann Lii-Rosales, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032603 (2023)
https://doi.org/10.1116/6.0002488
Published: April 2023
View article titled, Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition
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Includes: Supplementary data
Journal Articles

Etching of molybdenum via a combination of low-temperature ozone oxidation and wet-chemical oxide dissolution

Antoine Pacco, Teppei Nakano, Shota Iwahata, Akihisa Iwasaki, Efrain Altamirano Sanchez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032601 (2023)
https://doi.org/10.1116/6.0002404
Published: March 2023
View article titled, Etching of molybdenum via a combination of low-temperature ozone oxidation and wet-chemical oxide dissolution
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Includes: Supplementary data
Journal Articles

Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange

Daniel C. Messina, Kevin A. Hatch, Saurabh Vishwakarma, David J. Smith, Yuji Zhao, Robert J. Nemanich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022603 (2023)
https://doi.org/10.1116/6.0002255
Published: March 2023
View article titled, Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange
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Includes: Supplementary data
Journal Articles

Pulsed laser induced atomic layer etching of silicon

Matthew Eliceiri, Yoonsoo Rho, Runxuan Li, Costas P. Grigoropoulos
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022602 (2023)
https://doi.org/10.1116/6.0002399
Published: February 2023
View article titled, Pulsed laser induced atomic layer etching of silicon
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Includes: Supplementary data
Journal Articles

In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes

Heta-Elisa Nieminen, Mykhailo Chundak, Mikko J. Heikkilä, Paloma Ruiz Kärkkäinen, Marko Vehkamäki, Matti Putkonen, Mikko Ritala
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022401 (2023)
https://doi.org/10.1116/6.0002312
Published: February 2023
View article titled, <em>In vacuo</em> cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes
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Journal Articles

Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Jonas C. Gertsch, Jonathan L. Partridge, Austin M. Cano, Joel W. Clancey, Victor M. Bright, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012603 (2023)
https://doi.org/10.1116/6.0002149
Published: January 2023
View article titled, Thermal atomic layer etching of VO<sub>2</sub> using sequential BCl<sub>3</sub> and SF<sub>4</sub> exposures: Observation of conversion, ligand-exchange, and oxidation state changes
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Includes: Supplementary data
Journal Articles

CF4 plasma-based atomic layer etching of Al2O3 and surface smoothing effect

Chien-Wei Chen, Wen-Hao Cho, Chan-Yuen Chang, Chien-Ying Su, Nien-Nan Chu, Chi-Chung Kei, Bor-Ran Li
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012602 (2023)
https://doi.org/10.1116/6.0002210
Published: December 2022
View article titled, CF<sub>4</sub> plasma-based atomic layer etching of Al<sub>2</sub>O<sub>3</sub> and surface smoothing effect
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Includes: Supplementary data
Journal Articles

Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures

Andreas Fischer, David Mui, Aaron Routzahn, Ryan Gasvoda, Jim Sims, Thorsten Lill
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012601 (2023)
https://doi.org/10.1116/6.0002244
Published: December 2022
View article titled, Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures
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Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Published: October 2022
View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
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Journal Articles

SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam

Kang-Yi Lin, Christian Preischl, Christian Felix Hermanns, Daniel Rhinow, Hans-Michael Solowan, Michael Budach, Klaus Edinger, G. S. Oehrlein
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063004 (2022)
https://doi.org/10.1116/6.0002038
Published: October 2022
View article titled, SiO<sub>2</sub> etching and surface evolution using combined exposure to CF<sub>4</sub>/O<sub>2</sub> remote plasma and electron beam
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Journal Articles

Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Joseph R. Vella, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063203 (2022)
https://doi.org/10.1116/6.0002027
Published: October 2022
View article titled, Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms
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Includes: Supplementary data