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Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062406 (2023)
https://doi.org/10.1116/6.0003004
Published: October 2023
View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of crystalline Ga2S3 thin films

Femi Mathew, Nithin Poonkottil, Eduardo Solano, Dirk Poelman, Zeger Hens, Christophe Detavernier, Jolien Dendooven
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 060401 (2023)
https://doi.org/10.1116/6.0002993
Published: October 2023
View article titled, Plasma-enhanced atomic layer deposition of crystalline Ga<sub>2</sub>S<sub>3</sub> thin films
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Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H2/N2/Ar plasma

Wangu Kang, Ji Sang Ahn, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062401 (2023)
https://doi.org/10.1116/6.0002970
Published: September 2023
View article titled, Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H<sub>2</sub>/N<sub>2</sub>/Ar plasma
Open the PDF for Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H<sub>2</sub>/N<sub>2</sub>/Ar plasma in another window
Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces

Sanjie Liu, Yangfeng Li, Qing Liu, Jiayou Tao, Xinhe Zheng
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052405 (2023)
https://doi.org/10.1116/6.0002639
Published: August 2023
View article titled, Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces
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Journal Articles

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

Heli Seppänen, Igor Prozheev, Christoffer Kauppinen, Sami Suihkonen, Kenichiro Mizohata, Harri Lipsanen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052401 (2023)
https://doi.org/10.1116/6.0002705
Published: July 2023
View article titled, Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
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Journal Articles

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

Marco Lisker, Mamathamba Kalishettyhalli Mahadevaiah, Keerthi Dorai Swamy Reddy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042406 (2023)
https://doi.org/10.1116/6.0002424
Published: July 2023
View article titled, Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
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Journal Articles

Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma

Sen Chen, Jiaxuan Ren, Douhao Yang, Lijun Sang, Bowen Liu, Qiang Chen, Zhongwei Liu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042401 (2023)
https://doi.org/10.1116/6.0002484
Published: May 2023
View article titled, Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma
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Includes: Supplementary data
Journal Articles

Microkinetic based growth and property modeling of plasma enhanced atomic layer deposition silicon nitride thin film

Toshihiko Iwao, Tsung-Hsuan Yang, Gyeong S. Hwang, Peter L. G. Ventzek
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032410 (2023)
https://doi.org/10.1116/6.0002499
Published: May 2023
View article titled, Microkinetic based growth and property modeling of plasma enhanced atomic layer deposition silicon nitride thin film
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Journal Articles

Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments

Clémence Badie, Héloïse Tissot, Beniamino Sciacca, Maïssa K. Barr, Julien Bachmann, Christophe Vallée, Gaël Gautier, Thomas Defforge, Vincent Astie, Jean-Manuel Decams, Mikhael Bechelany, Lionel Santinacci
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032401 (2023)
https://doi.org/10.1116/6.0002288
Published: March 2023
View article titled, Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments
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Includes: Supplementary data
Journal Articles

Characterization of neutral species in an NH3-Ar plasma generated by a capacitively coupled plasma source at various radio frequencies

S. M. Johnson, J. P. Zhao, C. Schlechte, J. Carroll, T. Iwao, P. L. G. Ventzek, J. G. Ekerdt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023002 (2023)
https://doi.org/10.1116/6.0002247
Published: February 2023
View article titled, Characterization of neutral species in an NH<sub>3</sub>-Ar plasma generated by a capacitively coupled plasma source at various radio frequencies
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Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor

Kamesh Mullapudi, Konner E. K. Holden, Jessica L. Peterson, Charles L. Dezelah, Daniel F. Moser, Ravindra K. Kanjolia, Douglas J. Tweet, John F. Conley, Jr
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012406 (2023)
https://doi.org/10.1116/6.0002214
Published: December 2022
View article titled, Plasma-enhanced atomic layer deposition of WO<sub>3</sub>-SiO<sub>2</sub> films using a heteronuclear precursor
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Includes: Supplementary data
Journal Articles

Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition

Jeffrey M. Woodward, Samantha G. Rosenberg, David R. Boris, Michael J. Johnson, Scott G. Walton, Scooter D. Johnson, Zachary R. Robinson, Neeraj Nepal, Karl F. Ludwig, Jr., Jennifer K. Hite, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062405 (2022)
https://doi.org/10.1116/6.0002021
Published: October 2022
View article titled, Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

Ashwin Jayaraman, Sang Bok Kim, Luke M. Davis, Xiabing Lou, Xizhu Zhao, Roy G. Gordon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062402 (2022)
https://doi.org/10.1116/6.0001997
Published: September 2022
View article titled, Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films
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Includes: Supplementary data
Journal Articles

Synthesis and characteristics of Sn-doped SiO2 via plasma-enhanced atomic layer deposition for self-aligned patterning

Suhyeon Park, Junyung An, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062401 (2022)
https://doi.org/10.1116/6.0001895
Published: September 2022
View article titled, Synthesis and characteristics of Sn-doped SiO<sub>2</sub> via plasma-enhanced atomic layer deposition for self-aligned patterning
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Journal Articles

Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Kevin A. Hatch, Daniel C. Messina, Robert J. Nemanich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042603 (2022)
https://doi.org/10.1116/6.0001871
Published: June 2022
View article titled, Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
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Journal Articles

Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content

Daniela Fontecha, R. Blake Nuwayhid, Alexander C. Kozen, David M. Stewart, Gary W. Rubloff, Keith E. Gregorczyk
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 032403 (2022)
https://doi.org/10.1116/6.0001752
Published: April 2022
View article titled, Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
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Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications

Won-Bum Lee, Hyun-Jun Jeong, Hye-Mi Kim, Jin-Seong Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 032402 (2022)
https://doi.org/10.1116/6.0001643
Published: April 2022
View article titled, Plasma-enhanced atomic layer deposition of aluminum-indium oxide thin films and associated device applications
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Includes: Supplementary data
Journal Articles

High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Su Min Hwang, Harrison Sejoon Kim, Dan N. Le, Akshay Sahota, Jaebeom Lee, Yong Chan Jung, Sang Woo Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Jiyoung Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022406 (2022)
https://doi.org/10.1116/6.0001519
Published: February 2022
View article titled, High wet-etch resistance SiO<sub>2</sub> films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
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Journal Articles

Oxygen incorporation in AlN films grown by plasma-enhanced atomic layer deposition

Nese Gungor, Mustafa Alevli
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022404 (2022)
https://doi.org/10.1116/6.0001498
Published: January 2022
View article titled, Oxygen incorporation in AlN films grown by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Erratum: “Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths” [J. Vac. Sci. Technol. A 39, 043408 (2021)]

Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, Osamu Takayama
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 027001 (2022)
https://doi.org/10.1116/6.0001574
Published: January 2022
View article titled, Erratum: “Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths” [J. Vac. Sci. Technol. A 39, 043408 (2021)]
Open the PDF for Erratum: “Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths” [J. Vac. Sci. Technol. A 39, 043408 (2021)] in another window