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Journal Articles

Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications

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Sana Rachidi, Alain Campo, Virginie Loup, Christian Vizioz, Jean-Michel Hartmann, Sébastien Barnola, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033002 (2020)
https://doi.org/10.1116/1.5143118
Published: March 2020
View article titled, Isotropic dry etching of Si selectively to Si0.7Ge0.3 for CMOS sub-10 nm applications
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Journal Articles

Reaction of aqueous ammonium sulfide on SiGe 25%

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Stacy L. Heslop, Lauren Peckler, Anthony J. Muscat
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 03E110 (2017)
https://doi.org/10.1116/1.4982223
Published: April 2017
View article titled, Reaction of aqueous ammonium sulfide on SiGe 25%
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Includes: Supplementary data
Journal Articles

Plasma etching: Yesterday, today, and tomorrow

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Vincent M. Donnelly, Avinoam Kornblit
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 31, 050825 (2013)
https://doi.org/10.1116/1.4819316
Published: September 2013
View article titled, Plasma etching: Yesterday, today, and tomorrow
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Journal Articles

Chlorination of hydrogen-terminated silicon (111) surfaces

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Sandrine Rivillon, Yves J. Chabal, Lauren J. Webb, David J. Michalak, Nathan S. Lewis, Mathew D. Halls, Krishnan Raghavachari
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 23, 1100–1106 (2005)
https://doi.org/10.1116/1.1861941
Published: June 2005
View article titled, Chlorination of hydrogen-terminated silicon (111) surfaces
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Journal Articles

Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor deposition

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S. Habermehl, N. Dietz, Z. Lu, K. J. Bachmann, G. Lucovsky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 12, 990–994 (1994)
https://doi.org/10.1116/1.579077
Published: July 1994
View article titled, Heteroepitaxial growth of Si on GaP and GaAs surfaces by remote, plasma enhanced chemical vapor deposition
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