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Journal Articles

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst

J. Vac. Sci. Technol. A 41, 062705 (2023)

https://doi.org/10.1116/6.0002997

Published: November 2023

View article titled, Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han

J. Vac. Sci. Technol. A 41, 062406 (2023)

https://doi.org/10.1116/6.0003004

Published: October 2023

View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Includes: Supplementary data

Journal Articles

Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature

Lakshman Srinivasan, Cyril Jadaud, François Silva, Jean-Charles Vanel, Jean-Luc Maurice, Erik Johnson, Pere Roca i Cabarrocas, Karim Ouaras

J. Vac. Sci. Technol. A 41, 053407 (2023)

https://doi.org/10.1116/6.0002718

Published: July 2023

View article titled, Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature

Journal Articles

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

J. P. Olvera-Enríquez, L. I. Espinosa-Vega, I. E. Cortés-Mestizo, C. A. Mercado-Ornelas, F. E. Perea-Parrales, A. Belio-Manzano, C. M. Yee-Rendón, V. H. Méndez-García

J. Vac. Sci. Technol. A 41, 042714 (2023)

https://doi.org/10.1116/6.0002674

Published: July 2023

View article titled, Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

Journal Articles

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Charles W. Magee, Temel H. Buyuklimanli

J. Vac. Sci. Technol. A 41, 043413 (2023)

https://doi.org/10.1116/6.0002844

Published: June 2023

View article titled, Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Journal Articles

Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Malak Refaei, Andrian Kuchuk, Rohith Allaparthi, Mirsaeid Sarollahia, Md Helal Uddin Maruf, Morgan E. Ware

J. Vac. Sci. Technol. A 41, 042711 (2023)

https://doi.org/10.1116/6.0002679

Published: June 2023

View article titled, Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern

J. Vac. Sci. Technol. A 41, 043411 (2023)

https://doi.org/10.1116/6.0002651

Published: June 2023

View article titled, Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Includes: Supplementary data

Journal Articles

7.5 kV, 6.2 GW cm⁻² NiO/β-Ga₂O₃ vertical rectifiers with on–off ratio greater than 10¹³

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 41, 030401 (2023)

https://doi.org/10.1116/6.0002580

Published: April 2023

View article titled, 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

Journal Articles

InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy

Margaret A. Stevens, Wayne McKenzie, Gerald Baumgartner, Joel Q. Grim, Samuel G. Carter, Allan S. Bracker

J. Vac. Sci. Technol. A 41, 032703 (2023)

https://doi.org/10.1116/6.0002572

Published: April 2023

View article titled, InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy

Journal Articles

Atomic layer deposition of Cu₂O using copper acetylacetonate

Gabriel Bartholazzi, M. M. Shehata, Daniel H. Macdonald, Lachlan E. Black

J. Vac. Sci. Technol. A 41, 022402 (2023)

https://doi.org/10.1116/6.0002238

Published: February 2023

View article titled, Atomic layer deposition of Cu2O using copper acetylacetonate

Journal Articles

Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Zelong Fan, Zuoyan Qin, Lei Jin, Yuan Cao, Zhongyu Yue, Baikui Li, Honglei Wu, Zhenhua Sun

J. Vac. Sci. Technol. A 41, 013204 (2023)

https://doi.org/10.1116/5.0133162

Published: December 2022

View article titled, Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Includes: Supplementary data

Journal Articles

Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma

Kang-Yi Lin, Christian Preischl, Christian Felix Hermanns, Daniel Rhinow, Hans-Michael Solowan, Michael Budach, Hubertus Marbach, Klaus Edinger, G. S. Oehrlein

J. Vac. Sci. Technol. A 41, 013004 (2023)

https://doi.org/10.1116/6.0002234

Published: December 2022

View article titled, Electron beam-induced etching of SiO2, Si3N4, and poly-Si assisted by CF4/O2 remote plasma

Journal Articles

Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Hardik Jain, Mariadriana Creatore, Paul Poodt

J. Vac. Sci. Technol. A 41, 012401 (2023)

https://doi.org/10.1116/6.0002249

Published: December 2022

View article titled, Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Journal Articles

Critical review of Ohmic and Schottky contacts to β-Ga₂O₃

Luke A. M. Lyle

J. Vac. Sci. Technol. A 40, 060802 (2022)

https://doi.org/10.1116/6.0002144

Published: November 2022

View article titled, Critical review of Ohmic and Schottky contacts to β-Ga2O3

Journal Articles

Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga₂O₃ heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 40, 063407 (2022)

https://doi.org/10.1116/6.0002186

Published: November 2022

View article titled, Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers

Journal Articles

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Jonathan Emanuel Thomet, Aman Kamlesh Singh, Mélanie Nelly Rouèche, Nils Toggwyler, Franz-Josef Haug, Gabriel Christmann, Sylvain Nicolay, Christophe Ballif, Nicolas Wyrsch, Aïcha Hessler-Wyser, Mathieu Boccard

J. Vac. Sci. Technol. A 40, 063102 (2022)

https://doi.org/10.1116/6.0002039

Published: November 2022

View article titled, Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Journal Articles

SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam

Kang-Yi Lin, Christian Preischl, Christian Felix Hermanns, Daniel Rhinow, Hans-Michael Solowan, Michael Budach, Klaus Edinger, G. S. Oehrlein

J. Vac. Sci. Technol. A 40, 063004 (2022)

https://doi.org/10.1116/6.0002038

Published: October 2022

View article titled, SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam

Journal Articles

Ga⁺-focused ion beam damage in n-type Ga₂O₃

Xinyi Xia, Nahid Sultan Al-Mamun, Daudi Warywoba, Fan Ren, Aman Haque, S. J. Pearton

J. Vac. Sci. Technol. A 40, 053403 (2022)

https://doi.org/10.1116/5.0099892

Published: August 2022

View article titled, Ga+-focused ion beam damage in n-type Ga2O3

Journal Articles

Effect of fabrication processes before atomic layer deposition on β-Ga₂O₃/HfO₂/Cr/Au metal–oxide–semiconductor capacitors

Roberta Hawkins, Chadwin D. Young

J. Vac. Sci. Technol. A 40, 053202 (2022)

https://doi.org/10.1116/6.0001818

Published: July 2022

View article titled, Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors

Journal Articles

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Sneha Banerjee, Peng Zhang

J. Vac. Sci. Technol. A 40, 030802 (2022)

https://doi.org/10.1116/6.0001724

Published: May 2022

View article titled, Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

NARROW

Topics

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperature

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

7.5 kV, 6.2 GW cm⁻² NiO/β-Ga₂O₃ vertical rectifiers with on–off ratio greater than 10¹³

InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy

Atomic layer deposition of Cu₂O using copper acetylacetonate

Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma

Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage

Critical review of Ohmic and Schottky contacts to β-Ga₂O₃

Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga₂O₃ heterojunction rectifiers

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam

Ga⁺-focused ion beam damage in n-type Ga₂O₃

Effect of fabrication processes before atomic layer deposition on β-Ga₂O₃/HfO₂/Cr/Au metal–oxide–semiconductor capacitors

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

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