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Journal Articles

Boron atoms migration during epitaxial growth of boron-doped single-crystal diamond

Yulong Zhu, Xingyan Li, Li Gou

J. Vac. Sci. Technol. A 43, 023402 (2025)

https://doi.org/10.1116/6.0004186

Published: January 2025

View article titled, Boron atoms migration during epitaxial growth of boron-doped single-crystal diamond

Journal Articles

Lattice kinetic Monte Carlo method on fractal growth of transition metal dichalcogenides

Xuejiang Chen, Yishan Lin, Wensen Ai, Xinyao Zhang

J. Vac. Sci. Technol. A 43, 012202 (2025)

https://doi.org/10.1116/6.0004104

Published: January 2025

View article titled, Lattice kinetic Monte Carlo method on fractal growth of transition metal dichalcogenides

Journal Articles

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 018501 (2025)

https://doi.org/10.1116/6.0004146

Published: December 2024

View article titled, Perspective on breakdown in Ga2O3 vertical rectifiers

Journal Articles

Low temperature growth of single-phase and preferentially oriented ɛ-Ga₂O₃ films on sapphire substrates via atomic layer deposition

Xiangtai Liu, Jiayang Wang, Lu Jin, Jiao Fu, Qin Lu, Shaoqing Wang, Yifan Jia, Zhan Wang, Yunhe Guan, Haifeng Chen

J. Vac. Sci. Technol. A 43, 012402 (2025)

https://doi.org/10.1116/6.0004048

Published: December 2024

View article titled, Low temperature growth of single-phase and preferentially oriented ɛ-Ga2O3 films on sapphire substrates via atomic layer deposition

Journal Articles

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Siyuan Wang, Kai Zhang, Le Zhai, Li Huang

J. Vac. Sci. Technol. A 42, 063210 (2024)

https://doi.org/10.1116/6.0003824

Published: October 2024

View article titled, Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Journal Articles

OrbiSIMS depth profiling of semiconductor materials—Useful yield and depth resolution

Yundong Zhou, Alexis Franquet, Valentina Spampinato, Alex Merkulov, Michael R. Keenan, Paul A. W. van der Heide, Gustavo F. Trindade, Wilfried Vandervorst, Ian S. Gilmore

J. Vac. Sci. Technol. A 42, 053208 (2024)

https://doi.org/10.1116/6.0003821

Published: September 2024

View article titled, OrbiSIMS depth profiling of semiconductor materials—Useful yield and depth resolution

Journal Articles

MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Yu-Xuan Zeng, Xi-Rui Wang, Ruo-Yun Yang, Wei Huang, Lei Yang, Hong-Ping Ma, Qing-Chun Zhang

J. Vac. Sci. Technol. A 42, 053207 (2024)

https://doi.org/10.1116/5.0202640

Published: August 2024

View article titled, MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Journal Articles

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Behnam Zeinalvand Farzin, Jong Su Kim, Geun Hyeong Kim, DongKun Lee, Im Sik Han, Sang Jun Lee

J. Vac. Sci. Technol. A 42, 053203 (2024)

https://doi.org/10.1116/6.0003787

Published: August 2024

View article titled, Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

Journal Articles

High growth rate metal organic chemical vapor deposition grown Ga₂O₃ (010) Schottky diodes

Sudipto Saha, Lingyu Meng, Dong Su Yu, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Uttam Singisetti

J. Vac. Sci. Technol. A 42, 042705 (2024)

https://doi.org/10.1116/6.0003533

Published: July 2024

View article titled, High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes

Journal Articles

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Yao Shuai, Chuangui Wu, Wanli Zhang

J. Vac. Sci. Technol. A 42, 043405 (2024)

https://doi.org/10.1116/6.0003643

Published: May 2024

View article titled, Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Journal Articles

Electroconductive and photoelectric properties of Pt/(100) β-Ga₂O₃ Schottky barrier diode based on Czochralski grown crystal

Aleksei Almaev, Vladimir Nikolaev, Nikita Yakovlev, Pavel Butenko, Alexander Tsymbalov, Michael Boiko, Viktor Kopyev, Vladimir Krymov, Bogdan Kushnarev, Sevastian Shapenkov, Michael Sharkov, Anton Zarichny

J. Vac. Sci. Technol. A 42, 042802 (2024)

https://doi.org/10.1116/6.0003618

Published: May 2024

View article titled, Electroconductive and photoelectric properties of Pt/(100) β-Ga2O3 Schottky barrier diode based on Czochralski grown crystal

Journal Articles

Over 6 MV/cm operation in β-Ga₂O₃ Schottky barrier diodes with IrO₂ and RuO₂ anodes deposited by molecular beam epitaxy

B. Cromer, D. Saraswat, N. Pieczulewski, W. Li, K. Nomoto, F. V. E. Hensling, K. Azizie, H. P. Nair, D. G. Schlom, D. A. Muller, D. Jena, H. G. Xing

J. Vac. Sci. Technol. A 42, 033206 (2024)

https://doi.org/10.1116/6.0003468

Published: April 2024

View article titled, Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

PbS quantum dot thin film dry etching

Nicolas Le Brun, Gilles Cunge, Pascal Gouraud, Camille Petit-Etienne, Linda Parmigiani, Stéphane Allegret-Maret, Denis Guiheux, Jonathan S. Steckel

J. Vac. Sci. Technol. A 42, 033007 (2024)

https://doi.org/10.1116/6.0003335

Published: April 2024

View article titled, PbS quantum dot thin film dry etching

Journal Articles

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

T. Pan Menasuta, Kevin A. Grossklaus, John H. McElearney, Thomas E. Vandervelde

J. Vac. Sci. Technol. A 42, 032703 (2024)

https://doi.org/10.1116/6.0003458

Published: April 2024

View article titled, Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Journal Articles

Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Lewen Qian, Xin Sun, Tao Liu, Ziqiang Huang, Xinlong Guo, Maolin Pan, Dawei Wang, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang

J. Vac. Sci. Technol. A 42, 023423 (2024)

https://doi.org/10.1116/6.0003357

Published: February 2024

View article titled, Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Journal Articles

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou

J. Vac. Sci. Technol. A 42, 023418 (2024)

https://doi.org/10.1116/6.0003298

Published: February 2024

View article titled, Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures

Journal Articles

Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar ( 11 2 ¯ 2 ) substrate using cathodoluminescence in transmission electron microscopy

Mi-Hyang Sheen, Yong-Hee Lee, Okhyun Nam, Young-Woon Kim

J. Vac. Sci. Technol. A 42, 023413 (2024)

https://doi.org/10.1116/6.0003232

Published: February 2024

View article titled, Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar ( 11 2 ¯ 2 ) substrate using cathodoluminescence in transmission electron microscopy

Includes: Supplementary data

Journal Articles

Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface

Xuejiang Chen, Xinyao Zhang, Wensen Ai

J. Vac. Sci. Technol. A 42, 022703 (2024)

https://doi.org/10.1116/6.0003144

Published: January 2024

View article titled, Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface

Journal Articles

Effect of He diluted plasma on the deposition of flexible low-temperature polycrystalline silicon thin film

Jia Liu, Longgang Wang, Chunjuan Tang, Chuanwei Liu, Feng Shan, Ruirui Sun, Guanglei Guo

J. Vac. Sci. Technol. A 42, 013407 (2024)

https://doi.org/10.1116/6.0003174

Published: December 2023

View article titled, Effect of He diluted plasma on the deposition of flexible low-temperature polycrystalline silicon thin film

Includes: Supplementary data

Journal Articles

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst

J. Vac. Sci. Technol. A 41, 062705 (2023)

https://doi.org/10.1116/6.0002997

Published: November 2023

View article titled, Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

NARROW

Topics

Boron atoms migration during epitaxial growth of boron-doped single-crystal diamond

Lattice kinetic Monte Carlo method on fractal growth of transition metal dichalcogenides

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Low temperature growth of single-phase and preferentially oriented ɛ-Ga₂O₃ films on sapphire substrates via atomic layer deposition

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

OrbiSIMS depth profiling of semiconductor materials—Useful yield and depth resolution

MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance

High growth rate metal organic chemical vapor deposition grown Ga₂O₃ (010) Schottky diodes

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Electroconductive and photoelectric properties of Pt/(100) β-Ga₂O₃ Schottky barrier diode based on Czochralski grown crystal

Over 6 MV/cm operation in β-Ga₂O₃ Schottky barrier diodes with IrO₂ and RuO₂ anodes deposited by molecular beam epitaxy

PbS quantum dot thin film dry etching

Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures

Fabrication of the low-k films with tunable k value as spacers in advanced CMOS technology

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar ( 11 2 ¯ 2 ) substrate using cathodoluminescence in transmission electron microscopy

Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface

Effect of He diluted plasma on the deposition of flexible low-temperature polycrystalline silicon thin film

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

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