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Journal Articles

Molecular beam epitaxy of boron arsenide layers

Tin S. Cheng, Jonathan Bradford, Leo Norman, Xiaoyang Ji, Arpit Nandi, Gerardo T. Martinez, Stuart Robertson, Paul R. Edwards, James W. Pomeroy, David Cherns, Christopher J. Mellor, Robert W. Martin, Peter H. Beton, Martin Kuball, Sergei V. Novikov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 032705 (2025)
https://doi.org/10.1116/6.0004383
Published: April 2025
View articletitled, Molecular beam epitaxy of boron arsenide layers
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Journal Articles

Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga2O3 enhancement-mode recessed-gate MOSFETs

Hannah N. Masten, Gustavo Armando Alvarez, Corey Halverson, Joyce Christiansen-Salameh, Eugene Y. Kwon, Michael Liao, James Spencer Lundh, Audrey Rose Gutierrez, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Mark S. Goorsky, Marc H. Weber, Zhiting Tian, Karl D. Hobart, Marko J. Tadjer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 022703 (2025)
https://doi.org/10.1116/6.0004176
Published: February 2025
View articletitled, Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga2O3 enhancement-mode recessed-gate MOSFETs
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Journal Articles

Novel secondary ion mass spectrometry identification system for organic materials using random forest

Tetsuya Masuda, Miya Fujita, Tomikazu Ueno, Daisuke Hayashi, Satoka Aoyagi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 023204 (2025)
https://doi.org/10.1116/6.0004260
Published: February 2025
View articletitled, Novel secondary ion mass spectrometry identification system for organic materials using random forest
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Journal Articles

Plasma atomic layer etching of tantalum nitride with surface fluorination and Ar ion sputtering

Editor’s Pick
Hojin Kang, Sangbae Lee, Minsung Jeon, Heeyeop Chae
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 022601 (2025)
https://doi.org/10.1116/6.0004259
Published: February 2025
View articletitled, Plasma atomic layer etching of tantalum nitride with surface fluorination and Ar ion sputtering
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Journal Articles

Kinetics and mechanism of surface plutonium oxycarbide formation

Paul Roussel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 023202 (2025)
https://doi.org/10.1116/6.0004235
Published: January 2025
View articletitled, Kinetics and mechanism of surface plutonium oxycarbide formation
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Journal Articles

Secondary ion mass spectrometry relative sensitivity factor of 69Ga in ZnS

Hayat Soufiani, Mikhail Klimov, Romain Gaume
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 023201 (2025)
https://doi.org/10.1116/6.0004165
Published: January 2025
View articletitled, Secondary ion mass spectrometry relative sensitivity factor of 69Ga in ZnS
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Journal Articles

Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface

Editor’s Pick
Jyoti Sinha, Laura Nyns, Annelies Delabie
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 062412 (2024)
https://doi.org/10.1116/6.0003890
Published: November 2024
View articletitled, Substrate induced composition change during Ge2Sb2Te5 atomic layer deposition and study of initial reactions on SiO2 surface
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Journal Articles

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Siyuan Wang, Kai Zhang, Le Zhai, Li Huang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063210 (2024)
https://doi.org/10.1116/6.0003824
Published: October 2024
View articletitled, Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast
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Journal Articles

OrbiSIMS depth profiling of semiconductor materials—Useful yield and depth resolution

Featured
Yundong Zhou, Alexis Franquet, Valentina Spampinato, Alex Merkulov, Michael R. Keenan, Paul A. W. van der Heide, Gustavo F. Trindade, Wilfried Vandervorst, Ian S. Gilmore
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 053208 (2024)
https://doi.org/10.1116/6.0003821
Published: September 2024
View articletitled, OrbiSIMS depth profiling of semiconductor materials—Useful yield and depth resolution
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Journal Articles

Best practices for performing quantitative TOF-SIMS analyses

FeaturedScilight
Alan M. Spool, Lorie Finney
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 043204 (2024)
https://doi.org/10.1116/6.0003660
Published: July 2024
View articletitled, Best practices for performing quantitative TOF-SIMS analyses
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Journal Articles

Inhibition of atomic layer deposition of TiO2 by functionalizing silicon surface with 4-fluorophenylboronic acid

Dhamelyz Silva-Quinones, John R. Mason, Robert Norden, Andrew V. Teplyakov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 032402 (2024)
https://doi.org/10.1116/6.0003316
Published: March 2024
View articletitled, Inhibition of atomic layer deposition of TiO2 by functionalizing silicon surface with 4-fluorophenylboronic acid
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Includes: Supplementary data
Journal Articles

ToF-SIMS analysis of ultrathin films and their fragmentation patterns

Shin Muramoto, Daniel J. Graham, David G. Castner
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 023416 (2024)
https://doi.org/10.1116/6.0003249
Published: February 2024
View articletitled, ToF-SIMS analysis of ultrathin films and their fragmentation patterns
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Includes: Supplementary data
Journal Articles

Application of machine learning to spectrum and image data

Editor’s Pick
Satoka Aoyagi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063202 (2023)
https://doi.org/10.1116/6.0002858
Published: September 2023
View articletitled, Application of machine learning to spectrum and image data
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Includes: Supplementary data
Journal Articles

Work function measurement by ultraviolet photoelectron spectroscopy: Versailles project on advanced materials and standards interlaboratory study

Jeong Won Kim, Ansoon Kim, Hui Ung Hwang, Jun Hyung Kim, Seungwook Choi, Norbert Koch, Dongguen Shin, Zhijuan Zhao, Fen Liu, Minki Choi, Kyu Myung Lee, Yongsup Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053211 (2023)
https://doi.org/10.1116/6.0002852
Published: August 2023
View articletitled, Work function measurement by ultraviolet photoelectron spectroscopy: Versailles project on advanced materials and standards interlaboratory study
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Journal Articles

Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Changyong Oh, Hyeong Wook Kim, Myeong Woo Ju, Jun Ho Song, Bo Sung Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053007 (2023)
https://doi.org/10.1116/6.0002798
Published: August 2023
View articletitled, Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas
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Journal Articles

ToF-SIMS in battery research: Advantages, limitations, and best practices

Scilight
Teo Lombardo, Felix Walther, Christine Kern, Yannik Moryson, Timo Weintraut, Anja Henss, Marcus Rohnke
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053207 (2023)
https://doi.org/10.1116/6.0002850
Published: August 2023
View articletitled, ToF-SIMS in battery research: Advantages, limitations, and best practices
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Includes: Supplementary data
Journal Articles

Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application

Editor’s Pick
N. Sano, A. Bellew, P. Blenkinsopp
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053204 (2023)
https://doi.org/10.1116/6.0002864
Published: July 2023
View articletitled, Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application
Open the PDF for Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application in another window
Journal Articles

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Charles W. Magee, Temel H. Buyuklimanli
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043413 (2023)
https://doi.org/10.1116/6.0002844
Published: June 2023
View articletitled, Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]
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Journal Articles

Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Siegfried Hofmann, Feng-Min Zhong, Hao Yang, Jiang-Yong Wang, Cong-Kang Xu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013408 (2023)
https://doi.org/10.1116/6.0002233
Published: January 2023
View articletitled, Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation
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Journal Articles

Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, David C. Hays, Brent P. Gila, Valentin Craciun, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013405 (2023)
https://doi.org/10.1116/6.0002250
Published: December 2022
View articletitled, Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3
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