1-10 of 10
Material characterization methods
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Improvement of data analytics techniques in reflection high-energy electron diffraction to enable machine learning

Editor’s Pick
Patrick T. Gemperline, Rajendra Paudel, Rama K. Vasudevan, Ryan B. Comes
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 032701 (2025)
https://doi.org/10.1116/6.0004400
Published: March 2025
View article titled, Improvement of data analytics techniques in reflection high-energy electron diffraction to enable machine learning
Open the PDF for Improvement of data analytics techniques in reflection high-energy electron diffraction to enable machine learning in another window
Journal Articles

Applications of machine learning in ion beam analysis of materials

Tiago Fiorini da Silva
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 020803 (2025)
https://doi.org/10.1116/6.0004277
Published: February 2025
View article titled, Applications of machine learning in ion beam analysis of materials
Open the PDF for Applications of machine learning in ion beam analysis of materials in another window
Journal Articles

Immersion ellipsometry for the uncorrelated determination of ultrathin film thickness and index of refraction: Theory and examples

Featured
Samira Jafari, Blaine Johs, Matthew R. Linford
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 053401 (2024)
https://doi.org/10.1116/6.0003511
Published: July 2024
View article titled, Immersion ellipsometry for the uncorrelated determination of ultrathin film thickness and index of refraction: Theory and examples
Open the PDF for Immersion ellipsometry for the uncorrelated determination of ultrathin film thickness and index of refraction: Theory and examples in another window
Journal Articles

Best practices for performing quantitative TOF-SIMS analyses

FeaturedScilight
Alan M. Spool, Lorie Finney
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 043204 (2024)
https://doi.org/10.1116/6.0003660
Published: July 2024
View article titled, Best practices for performing quantitative TOF-SIMS analyses
Open the PDF for Best practices for performing quantitative TOF-SIMS analyses in another window
Journal Articles

Materials characterization: Can artificial intelligence be used to address reproducibility challenges?

Miu Lun Lau, Abraham Burleigh, Jeff Terry, Min Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 060801 (2023)
https://doi.org/10.1116/6.0002809
Published: November 2023
View article titled, Materials characterization: Can artificial intelligence be used to address reproducibility challenges?
Open the PDF for Materials characterization: Can artificial intelligence be used to address reproducibility challenges? in another window
Journal Articles

Photoemission spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials

Faegheh S. Sajjadian, Laura Galleni, Kevin M. Dorney, Dhirendra P. Singh, Fabian Holzmeier, Michiel J. van Setten, Stefan De Gendt, Thierry Conard
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053206 (2023)
https://doi.org/10.1116/6.0002808
Published: August 2023
View article titled, Photoemission spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials
Open the PDF for Photoemission spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials in another window
Journal Articles

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

Marco Lisker, Mamathamba Kalishettyhalli Mahadevaiah, Keerthi Dorai Swamy Reddy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042406 (2023)
https://doi.org/10.1116/6.0002424
Published: July 2023
View article titled, Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
Open the PDF for Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications in another window
Journal Articles

Shake loss intensities in x-ray photoelectron spectroscopy: Theory, experiment, and atomic composition accuracy for MgO and related compounds

Paul S. Bagus, C. R. Brundle, B. Vincent Crist
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063206 (2021)
https://doi.org/10.1116/6.0001188
Published: September 2021
View article titled, Shake loss intensities in x-ray photoelectron spectroscopy: Theory, experiment, and atomic composition accuracy for MgO and related compounds
Open the PDF for Shake loss intensities in x-ray photoelectron spectroscopy: Theory, experiment, and atomic composition accuracy for MgO and related compounds in another window
Includes: Supplementary data
Journal Articles

Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes

Manoj K Yadav, Arnab Mondal, Satinder K. Sharma, Ankush Bag
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 033203 (2021)
https://doi.org/10.1116/6.0000858
Published: March 2021
View article titled, Substrate orientation dependent current transport mechanisms in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/Si based Schottky barrier diodes
Open the PDF for Substrate orientation dependent current transport mechanisms in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/Si based Schottky barrier diodes in another window
Journal Articles

Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

U. Nandi, M. Mohammadi, H. Lu, J. Norman, A. C. Gossard, L. Alff, S. Preu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023407 (2021)
https://doi.org/10.1116/6.0000773
Published: February 2021
View article titled, Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation
Open the PDF for Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation in another window