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Journal Articles

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Gengyu Wang, Wenbo Luo, Dailei Zhu, Yuedong Wang, Yao Shuai, Chuangui Wu, Wanli Zhang

J. Vac. Sci. Technol. A 42, 043405 (2024)

https://doi.org/10.1116/6.0003643

Published: May 2024

View article titled, Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Journal Articles

Friction and wear behavior of C implanted copper via ion beam-assisted bombardment

Changhui Li, Jiajun Zhu, Juanrui Hu, Leilei Hao, Bin Ji, Licai Fu, Wulin Yang, Lingping Zhou

J. Vac. Sci. Technol. A 42, 033205 (2024)

https://doi.org/10.1116/6.0003495

Published: April 2024

View article titled, Friction and wear behavior of C implanted copper via ion beam-assisted bombardment

Journal Articles

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

Michael E. Liao, Kenny Huynh, Zhe Cheng, Jingjing Shi, Samuel Graham, Mark S. Goorsky

J. Vac. Sci. Technol. A 41, 063203 (2023)

https://doi.org/10.1116/6.0002693

Published: September 2023

View article titled, Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC

Journal Articles

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt

J. Vac. Sci. Technol. A 41, 043102 (2023)

https://doi.org/10.1116/6.0002642

Published: May 2023

View article titled, Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Journal Articles

Thermal versus radiation-assisted defect annealing in β-Ga₂O₃

Alexander Azarov, Vishnukanthan Venkatachalapathy, In-Hwan Lee, Andrej Kuznetsov

J. Vac. Sci. Technol. A 41, 023101 (2023)

https://doi.org/10.1116/6.0002388

Published: January 2023

View article titled, Thermal versus radiation-assisted defect annealing in β-Ga2O3

Journal Articles

Evaluation of the accuracy of stopping and range of ions in matter simulations through secondary ion mass spectrometry and Rutherford backscattering spectrometry for low energy heavy ion implantation

Michael Titze, Jose L. Pacheco, Todd Byers, Stuart B. Van Deusen, Daniel L. Perry, Duncan Weathers, Edward S. Bielejec

J. Vac. Sci. Technol. A 39, 063222 (2021)

https://doi.org/10.1116/6.0001406

Published: November 2021

View article titled, Evaluation of the accuracy of stopping and range of ions in matter simulations through secondary ion mass spectrometry and Rutherford backscattering spectrometry for low energy heavy ion implantation

Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga₂O₃ rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 063405 (2021)

https://doi.org/10.1116/6.0001347

Published: September 2021

View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Journal Articles

Diffusion of dopants and impurities in β-Ga₂O₃

Ribhu Sharma, Mark E. Law, Fan Ren, Alexander Y. Polyakov, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 060801 (2021)

https://doi.org/10.1116/6.0001307

Published: September 2021

View article titled, Diffusion of dopants and impurities in β-Ga2O3

Journal Articles

Evaluation of nickel self-sputtering yields by molecular-dynamics simulation

Nicolas A. Mauchamp, Michiro Isobe, Satoshi Hamaguchi

J. Vac. Sci. Technol. A 39, 043005 (2021)

https://doi.org/10.1116/6.0000979

Published: June 2021

View article titled, Evaluation of nickel self-sputtering yields by molecular-dynamics simulation

Journal Articles

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Rakesh Kumar Pandey, Puspashree Mishra, Akhilesh Pandey, Shankar Dutta, Aman Arora, Shyama Rath

J. Vac. Sci. Technol. A 39, 043413 (2021)

https://doi.org/10.1116/6.0000895

Published: June 2021

View article titled, Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Journal Articles

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Vincent S. Smentkowski, Shubhodeep Goswami

J. Vac. Sci. Technol. A 39, 033204 (2021)

https://doi.org/10.1116/6.0000905

Published: April 2021

View article titled, Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Journal Articles

Ion implantation in β-Ga₂O₃: Physics and technology

Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev, Anton Stepanov, Dmitry Nikolichev, Alexey Mikhaylov, David Tetelbaum, Aleksei Almaev, Charles Airton Bolzan, Antônio Buaczik, Jr., Raquel Giulian, Pedro Luis Grande, Ashok Kumar, Mahesh Kumar, Daniela Gogova

J. Vac. Sci. Technol. A 39, 030802 (2021)

https://doi.org/10.1116/6.0000928

Published: March 2021

View article titled, Ion implantation in β-Ga2O3: Physics and technology

Journal Articles

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

April D. Jewell, Quinn Looker, Marcos O. Sanchez, Shouleh Nikzad, Michael E. Hoenk

J. Vac. Sci. Technol. A 38, 023203 (2020)

https://doi.org/10.1116/1.5140979

Published: January 2020

View article titled, Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

Journal Articles

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Adéla Jagerová, Petr Malinský, Romana Mikšová, Pavla Nekvindová, Jakub Cajzl, Shavkat Akhmadaliev, Václav Holý, Anna Macková

J. Vac. Sci. Technol. A 37, 061406 (2019)

https://doi.org/10.1116/1.5125320

Published: November 2019

View article titled, Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Journal Articles

Use of ellipsometry to monitor methane plasma ion implant process

Nicholas P. T. Bateman

J. Vac. Sci. Technol. A 37, 021302 (2019)

https://doi.org/10.1116/1.5068759

Published: January 2019

View article titled, Use of ellipsometry to monitor methane plasma ion implant process

Journal Articles

Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Vincent Ah-Leung, Olivier Pollet, Nicolas Possémé, Maxime Garcia Barros, Névine Rochat, Cyril Guedj, Guillaume Audoit, Sébastien Barnola

J. Vac. Sci. Technol. A 35, 021408 (2017)

https://doi.org/10.1116/1.4977077

Published: March 2017

View article titled, Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Journal Articles

Quasi-atomic layer etching of silicon nitride

Sonam D. Sherpa, Alok Ranjan

J. Vac. Sci. Technol. A 35, 01A102 (2017)

https://doi.org/10.1116/1.4967236

Published: November 2016

View article titled, Quasi-atomic layer etching of silicon nitride

Journal Articles

RBS-channeling study of radiation damage in Ar⁺ implanted CuInSe₂ crystals

Michael V. Yakushev, Vladimir A. Volkov, Niyazi N. Mursakulov, Chimnaz E. Sabzaliyeva, Robert W. Martin

J. Vac. Sci. Technol. A 34, 051203 (2016)

https://doi.org/10.1116/1.4961882

Published: August 2016

View article titled, RBS-channeling study of radiation damage in Ar+ implanted CuInSe2 crystals

Journal Articles

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Nobuyuki Kuboi, Tetsuya Tatsumi, Takashi Kinoshita, Takushi Shigetoshi, Masanaga Fukasawa, Jun Komachi, Hisahiro Ansai

J. Vac. Sci. Technol. A 33, 061308 (2015)

https://doi.org/10.1116/1.4931782

Published: September 2015

View article titled, Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Journal Articles

Nitrogen mass transfer models for plasma-based low-energy ion implantation

Bocong Zheng, Kesheng Wang, Zhipeng Zhang, Honglong Che, Mingkai Lei

J. Vac. Sci. Technol. A 33, 021311 (2015)

https://doi.org/10.1116/1.4907713

Published: February 2015

View article titled, Nitrogen mass transfer models for plasma-based low-energy ion implantation

NARROW

Topics

Lattice defects distribution of H⁺ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy

Friction and wear behavior of C implanted copper via ion beam-assisted bombardment

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

Thermal versus radiation-assisted defect annealing in β-Ga₂O₃

Evaluation of the accuracy of stopping and range of ions in matter simulations through secondary ion mass spectrometry and Rutherford backscattering spectrometry for low energy heavy ion implantation

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga₂O₃ rectifiers

Diffusion of dopants and impurities in β-Ga₂O₃

Evaluation of nickel self-sputtering yields by molecular-dynamics simulation

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

Quantitative depth profiling of Al in SiC using time of flight–secondary ion mass spectroscopy

Ion implantation in β-Ga₂O₃: Physics and technology

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Use of ellipsometry to monitor methane plasma ion implant process

Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Quasi-atomic layer etching of silicon nitride

RBS-channeling study of radiation damage in Ar⁺ implanted CuInSe₂ crystals

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Nitrogen mass transfer models for plasma-based low-energy ion implantation

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