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Journal Articles

Significance of plasma-surface interactions in the etch behavior of low-k materials

Adam Pranda, Steven Grzeskowiak, Yu- Hao Tsai, Yusuke Yoshida, Eric Liu, Yun Han, Peter Biolsi, Ken Kobayashi, Nobuyuki Ikezawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063009 (2023)
https://doi.org/10.1116/6.0003014
Published: November 2023
View article titled, Significance of plasma-surface interactions in the etch behavior of low-k materials
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Journal Articles

Atomic layer deposition of MoOx thin films using Mo(iPrCp)2H2 and O3

Ethan Hendrix, Ben M. Garland, Vamseedhara Vemuri, Nicholas C. Strandwitz
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032409 (2023)
https://doi.org/10.1116/6.0002436
Published: April 2023
View article titled, Atomic layer deposition of MoO<sub>x</sub> thin films using Mo(<sup>i</sup>PrCp)<sub>2</sub>H<sub>2</sub> and O<sub>3</sub>
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Journal Articles

Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

M. A. Mione, V. Vandalon, W. M. M. Kessels, F. Roozeboom
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062407 (2022)
https://doi.org/10.1116/6.0002158
Published: November 2022
View article titled, Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al<sub>2</sub>O<sub>3</sub> using infrared and optical emission spectroscopy
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Includes: Supplementary data
Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Published: October 2022
View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
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Journal Articles

Temperature-resolved surface infrared spectroscopy of CO on Rh(111) and (2 × 1)-O/Rh(111)

Elizabeth A. Jamka, Maxwell Z. Gillum, Christina N. Grytsyshyn-Giger, Faith J. Lewis, Daniel R. Killelea
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 043209 (2022)
https://doi.org/10.1116/6.0001932
Published: June 2022
View article titled, Temperature-resolved surface infrared spectroscopy of CO on Rh(111) and (2 × 1)-O/Rh(111)
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Journal Articles

Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition

Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, Stacey F. Bent
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 023405 (2022)
https://doi.org/10.1116/6.0001505
Published: January 2022
View article titled, Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition
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Includes: Supplementary data
Journal Articles

Spontaneous etching of B2O3 by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory

Austin M. Cano, Suresh Kondati Natarajan, Jonathan L. Partridge, Simon D. Elliott, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022601 (2022)
https://doi.org/10.1116/6.0001542
Published: January 2022
View article titled, Spontaneous etching of B<sub>2</sub>O<sub>3</sub> by HF gas studied using infrared spectroscopy, mass spectrometry, and density functional theory
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Journal Articles

Area-selective atomic layer deposition of Al2O3 on SiNx with SiO2 as the nongrowth surface

Wanxing Xu, Ryan J. Gasvoda, Paul C. Lemaire, Kashish Sharma, Dennis M. Hausmann, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 012403 (2022)
https://doi.org/10.1116/6.0001449
Published: December 2021
View article titled, Area-selective atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on SiN<em><sub>x</sub></em> with SiO<sub>2</sub> as the nongrowth surface
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Includes: Supplementary data
Journal Articles

Reflection absorption infrared spectroscopy of the surface chemistry of furfural on Pd(111)

Robert Bavisotto, Sree Pradipta Roy, Wilfred T. Tysoe
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 013203 (2022)
https://doi.org/10.1116/6.0001355
Published: December 2021
View article titled, Reflection absorption infrared spectroscopy of the surface chemistry of furfural on Pd(111)
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Includes: Supplementary data
Journal Articles

Experimental and theoretical investigation of the formation of two-dimensional Fe silicate on Pd(111)

Nassar Doudin, Kayahan Saritas, Sohrab Ismail-Beigi, Eric I. Altman
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 062201 (2021)
https://doi.org/10.1116/6.0001397
Published: November 2021
View article titled, Experimental and theoretical investigation of the formation of two-dimensional Fe silicate on Pd(111)
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Journal Articles

Interface quality in GaSb/AlSb short period superlattices

Md Nazmul Alam, Joseph R. Matson, Patrick Sohr, Joshua D. Caldwell, Stephanie Law
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063406 (2021)
https://doi.org/10.1116/6.0001290
Published: September 2021
View article titled, Interface quality in GaSb/AlSb short period superlattices
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Includes: Supplementary data
Journal Articles

High resolution synchrotron extended x-ray absorption fine structure and infrared spectroscopy analysis of MBE grown CdTe/InSb epifilms

Devki N. Talwar, Na Lu, Ian T. Ferguson, Zhe Chuan Feng
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063401 (2021)
https://doi.org/10.1116/6.0001145
Published: September 2021
View article titled, High resolution synchrotron extended x-ray absorption fine structure and infrared spectroscopy analysis of MBE grown CdTe/InSb epifilms
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Journal Articles

Selective functionalization of partially etched SiNx to enhance SiO2 to SiNx etch selectivity

Ryan J. Gasvoda, Xue Wang, Prabhat Kumar, Eric A. Hudson, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 050401 (2021)
https://doi.org/10.1116/6.0001110
Published: July 2021
View article titled, Selective functionalization of partially etched SiN<em><sub>x</sub></em> to enhance SiO<sub>2</sub> to SiN<em><sub>x</sub></em> etch selectivity
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Includes: Supplementary data
Journal Articles

Gas-phase surface functionalization of SiNx with benzaldehyde to increase SiO2 to SiNx etch selectivity in atomic layer etching

Ryan J. Gasvoda, Zhonghao Zhang, Eric A. Hudson, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 040401 (2021)
https://doi.org/10.1116/6.0001046
Published: May 2021
View article titled, Gas-phase surface functionalization of SiN<em><sub>x</sub></em> with benzaldehyde to increase SiO<sub>2</sub> to SiN<em><sub>x</sub></em> etch selectivity in atomic layer etching
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Includes: Supplementary data
Journal Articles

Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Wanxing Xu, Paul C. Lemaire, Kashish Sharma, Ryan J. Gasvoda, Dennis M. Hausmann, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032402 (2021)
https://doi.org/10.1116/6.0000699
Published: March 2021
View article titled, Mechanism for growth initiation on aminosilane-functionalized SiO<sub>2</sub> during area-selective atomic layer deposition of ZrO<sub>2</sub>
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Journal Articles

Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

U. Nandi, M. Mohammadi, H. Lu, J. Norman, A. C. Gossard, L. Alff, S. Preu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023407 (2021)
https://doi.org/10.1116/6.0000773
Published: February 2021
View article titled, Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation
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Journal Articles

Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2

Marc J. M. Merkx, Rick G. J. Jongen, Alfredo Mameli, Paul C. Lemaire, Kashish Sharma, Dennis M. Hausmann, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 012402 (2021)
https://doi.org/10.1116/6.0000652
Published: December 2020
View article titled, Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO<sub>2</sub>
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Includes: Supplementary data
Journal Articles

Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist

Adam Pranda, Kang-Yi Lin, Sebastian Engelmann, Robert L. Bruce, Eric A. Joseph, Dominik Metzler, Gottlieb S. Oehrlein
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 052601 (2020)
https://doi.org/10.1116/6.0000289
Published: July 2020
View article titled, Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist
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Journal Articles

Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources

Wanxing Xu, Paul C. Lemaire, Kashish Sharma, Dennis M. Hausmann, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 012401 (2020)
https://doi.org/10.1116/1.5122994
Published: December 2019
View article titled, Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources
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Journal Articles

Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

Rafaiel A. Ovanesyan, Ekaterina A. Filatova, Simon D. Elliott, Dennis M. Hausmann, David C. Smith, Sumit Agarwal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 060904 (2019)
https://doi.org/10.1116/1.5113631
Published: September 2019
View article titled, Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
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