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Journal Articles

Significance of plasma-surface interactions in the etch behavior of low-k materials

Adam Pranda, Steven Grzeskowiak, Yu- Hao Tsai, Yusuke Yoshida, Eric Liu, Yun Han, Peter Biolsi, Ken Kobayashi, Nobuyuki Ikezawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063009 (2023)
https://doi.org/10.1116/6.0003014
Published: November 2023
View article titled, Significance of plasma-surface interactions in the etch behavior of low-k materials
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Journal Articles

Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy

Joseph R. Vella, Qinzhen Hao, Vincent M. Donnelly, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062602 (2023)
https://doi.org/10.1116/6.0003011
Published: November 2023
View article titled, Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy
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Includes: Supplementary data
Journal Articles

Modeling of microtrenching and bowing effects in nanoscale Si inductively coupled plasma etching process

Ziyi Hu, Hua Shao, Junjie Li, Panpan Lai, Wenrui Wang, Chen Li, Qi Yan, Xiaobin He, Junfeng Li, Tao Yang, Rui Chen, Yayi Wei
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063113 (2023)
https://doi.org/10.1116/6.0003032
Published: November 2023
View article titled, Modeling of microtrenching and bowing effects in nanoscale Si inductively coupled plasma etching process
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Journal Articles

Electrochromic properties of NiO films prepared by atomic layer deposition

Xi Su, Zexin Tu, Liwei Ji, Hao Wu, Hongxing Xu, Chang Liu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062407 (2023)
https://doi.org/10.1116/6.0003040
Published: October 2023
View article titled, Electrochromic properties of NiO films prepared by atomic layer deposition
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Journal Articles

Effects of C4F8 plasma polymerization film on etching profiles in the Bosch process

Tomoyuki Nonaka, Kazuo Takahashi, Akimi Uchida, Stefan Lundgaard, Osamu Tsuji
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063004 (2023)
https://doi.org/10.1116/5.0158954
Published: October 2023
View article titled, Effects of C<sub>4</sub>F<sub>8</sub> plasma polymerization film on etching profiles in the Bosch process
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Journal Articles

Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF6/H2 plasma

Azmain A. Hossain, Haozhe Wang, David S. Catherall, Martin Leung, Harm C. M. Knoops, James R. Renzas, Austin J. Minnich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062601 (2023)
https://doi.org/10.1116/6.0002965
Published: September 2023
View article titled, Isotropic plasma-thermal atomic layer etching of superconducting titanium nitride films using sequential exposures of molecular oxygen and SF<sub>6</sub>/H<sub>2</sub> plasma
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Journal Articles

Selective mask deposition using SiCl4 plasma for highly selective etching process

Miyako Matsui, Makoto Miura, Kenichi Kuwahara
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063002 (2023)
https://doi.org/10.1116/6.0002773
Published: September 2023
View article titled, Selective mask deposition using SiCl<sub>4</sub> plasma for highly selective etching process
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Journal Articles

Quasiatomic layer etching of silicon nitride enhanced by low temperature

Daniel N. Shanks, Rania K. Ahmed, John D. Femi-Oyetoro, Matthew R. Dickie, Andrew D. Beyer, Frank Greer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052601 (2023)
https://doi.org/10.1116/6.0002846
Published: August 2023
View article titled, Quasiatomic layer etching of silicon nitride enhanced by low temperature
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Journal Articles

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin, Joseph R. Vella, Igor Kaganovich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052602 (2023)
https://doi.org/10.1116/6.0002841
Published: August 2023
View article titled, Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study
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Journal Articles

Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas

Changyong Oh, Hyeong Wook Kim, Myeong Woo Ju, Jun Ho Song, Bo Sung Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053007 (2023)
https://doi.org/10.1116/6.0002798
Published: August 2023
View article titled, Study on effective dry etching of InGaZnO thin films under capacitively coupled plasma-reactive ion etching with a nonfluorine-based etching gas
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Journal Articles

Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching

Benjamin Fontaine, Christelle Boixaderas, Jérôme Dubois, Pascal Gouraud, Arnaud Rival, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053005 (2023)
https://doi.org/10.1116/6.0002751
Published: August 2023
View article titled, Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching
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Journal Articles

Process optimization for shallow trench isolation etch using computational models

Shuo Huang, Prem Panneerchelvam, Chad M. Huard, Shyam Sridhar, Peter L. G. Ventzek, Mark D. Smith
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053004 (2023)
https://doi.org/10.1116/6.0002838
Published: August 2023
View article titled, Process optimization for shallow trench isolation etch using computational models
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Journal Articles

In situ plasmonic tip preparation and validation techniques for scanning tunneling microscopy

Benjamen N. Taber, Matthew L. Neill, Trevor N. Thom, Octavia D. Clapp, Vartkess Ara Apkarian, Joonhee Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053205 (2023)
https://doi.org/10.1116/6.0002807
Published: July 2023
View article titled, <em>In situ</em> plasmonic tip preparation and validation techniques for scanning tunneling microscopy
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Journal Articles

Characterization of a broad beam Kaufman-type ion source operated with CHF3 and O2

Gregor Dornberg, Erik Rohkamm, Peter Birtel, Frank Scholze, Frank Frost
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053104 (2023)
https://doi.org/10.1116/6.0002766
Published: July 2023
View article titled, Characterization of a broad beam Kaufman-type ion source operated with CHF<sub>3</sub> and O<sub>2</sub>
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Includes: Supplementary data
Journal Articles

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

Marco Lisker, Mamathamba Kalishettyhalli Mahadevaiah, Keerthi Dorai Swamy Reddy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042406 (2023)
https://doi.org/10.1116/6.0002424
Published: July 2023
View article titled, Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
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Journal Articles

Atomic layer deposition of calcium fluoride for barrier coating applications

John Hennessy, Robin E. Rodríguez, William C. West, Erik J. Brandon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042405 (2023)
https://doi.org/10.1116/6.0002563
Published: June 2023
View article titled, Atomic layer deposition of calcium fluoride for barrier coating applications
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Includes: Supplementary data
Journal Articles

Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems

Lulu Guan, Xingyu Li, Chunxiang Guo, Xinying Shi, Kaidong Xu, Shiwei Zhuang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042603 (2023)
https://doi.org/10.1116/6.0002647
Published: June 2023
View article titled, Exploring the self-limiting atomic layer etching of AlGaN: A study of O<sub>2</sub>-BCl<sub>3</sub> and chlorinate-argon systems
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Includes: Supplementary data
Journal Articles

Electron-enhanced SiO2 atomic layer deposition at 35 °C using disilane and ozone or water as reactants

Jonas C. Gertsch, Zachary C. Sobell, Andrew S. Cavanagh, Harsono Simka, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042404 (2023)
https://doi.org/10.1116/6.0002726
Published: June 2023
View article titled, Electron-enhanced SiO<sub>2</sub> atomic layer deposition at 35 °C using disilane and ozone or water as reactants
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Journal Articles

Comparison of BCl3, TiCl4, and SOCl2 chlorinating agents for atomic layer etching of TiO2 and ZrO2 using tungsten hexafluoride

Holger Saare, Wenyi Xie, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042602 (2023)
https://doi.org/10.1116/6.0002708
Published: June 2023
View article titled, Comparison of BCl<sub>3</sub>, TiCl<sub>4</sub>, and SOCl<sub>2</sub> chlorinating agents for atomic layer etching of TiO<sub>2</sub> and ZrO<sub>2</sub> using tungsten hexafluoride
Open the PDF for Comparison of BCl<sub>3</sub>, TiCl<sub>4</sub>, and SOCl<sub>2</sub> chlorinating agents for atomic layer etching of TiO<sub>2</sub> and ZrO<sub>2</sub> using tungsten hexafluoride in another window
Includes: Supplementary data
Journal Articles

Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations

Joseph R. Vella, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042601 (2023)
https://doi.org/10.1116/6.0002719
Published: June 2023
View article titled, Near-surface damage and mixing in Si-Cl<sub>2</sub>-Ar atomic layer etching processes: Insights from molecular dynamics simulations
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