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Journal Articles
Nonlinear decomposition of gallium x-ray induced Auger transitions: A new path to quantify gallium-based III–V materials
Available to PurchaseKirène Gaffar, Solène Béchu, Romain Jouanneaud, Guillaume Monier, Christine Robert-Goumet, Arnaud Etcheberry, Muriel Bouttemy
J. Vac. Sci. Technol. A 43, 043205 (2025)
Published: June 2025
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Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy
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J. Vac. Sci. Technol. A 43, 033407 (2025)
Published: April 2025
Journal Articles
Layer-dependent optical properties of PtSe2 determined from a single film
Available to PurchaseOwen Peterson, Hatim Saeed, Jackson Niedel, Ke Wang, Qihua Zhang, Stephanie Law, Maria Hilse, Frank Peiris
J. Vac. Sci. Technol. A 43, 032201 (2025)
Published: April 2025
Journal Articles
Proton irradiation effect on InAs/GaAs quantum dot solar cells
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J. Vac. Sci. Technol. A 43, 032801 (2025)
Published: April 2025
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Growth of InBi on InSb(100) via molecular beam epitaxy
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J. Vac. Sci. Technol. A 43, 033406 (2025)
Published: April 2025
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Growth regimes of (0001) AlN by ammonia molecular beam epitaxy
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J. Vac. Sci. Technol. A 43, 032706 (2025)
Published: April 2025
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In situ control of GaN growth rate in nitrogen-limited regime
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J. Vac. Sci. Technol. A 43, 032704 (2025)
Published: April 2025
Journal Articles
Molecular beam epitaxy of boron arsenide layers
Open AccessTin S. Cheng, Jonathan Bradford, Leo Norman, Xiaoyang Ji, Arpit Nandi, Gerardo T. Martinez, Stuart Robertson, Paul R. Edwards, James W. Pomeroy, David Cherns, Christopher J. Mellor, Robert W. Martin, Peter H. Beton, Martin Kuball, Sergei V. Novikov
J. Vac. Sci. Technol. A 43, 032705 (2025)
Published: April 2025
Journal Articles
Optimizing GaAs/AlGaAs growth on GaAs (111)B for enhanced nonlinear efficiency in quantum optical metasurfaces
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J. Vac. Sci. Technol. A 43, 032703 (2025)
Published: April 2025
Journal Articles
Tiffany C. Kaspar, Sarah Akers, Henry W. Sprueill, Arman H. Ter-Petrosyan, Jenna A. Bilbrey, Derek Hopkins, Ajay Harilal, Jijo Christudasjustus, Patrick Gemperline, Ryan B. Comes
J. Vac. Sci. Technol. A 43, 032702 (2025)
Published: March 2025
Journal Articles
Improvement of data analytics techniques in reflection high-energy electron diffraction to enable machine learning
J. Vac. Sci. Technol. A 43, 032701 (2025)
Published: March 2025
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Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga2O3 enhancement-mode recessed-gate MOSFETs
Available to PurchaseHannah N. Masten, Gustavo Armando Alvarez, Corey Halverson, Joyce Christiansen-Salameh, Eugene Y. Kwon, Michael Liao, James Spencer Lundh, Audrey Rose Gutierrez, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Mark S. Goorsky, Marc H. Weber, Zhiting Tian, Karl D. Hobart, Marko J. Tadjer
J. Vac. Sci. Technol. A 43, 022703 (2025)
Published: February 2025
Journal Articles
Enhancing the nucleation in atomic layer deposition: A study on vanadium sulfide and oxide layers
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J. Vac. Sci. Technol. A 43, 022408 (2025)
Published: February 2025
Journal Articles
J. Vac. Sci. Technol. A 43, 023203 (2025)
Published: February 2025
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Challenges and insights in growing epitaxial FeSn thin films on GaAs(111) substrate using molecular beam epitaxy
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J. Vac. Sci. Technol. A 43, 022701 (2025)
Published: January 2025
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Boron atoms migration during epitaxial growth of boron-doped single-crystal diamond
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J. Vac. Sci. Technol. A 43, 023402 (2025)
Published: January 2025
Journal Articles
Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
Gilbert B. Rayner, Jr., Noel O’Toole, Bangzhi Liu, Jeffrey Shallenberger, Jiadi Zhu, Tomás Palacios, Piush Behera, Suraj Cheema, Blaine Johs, Nicholas A. Strnad
J. Vac. Sci. Technol. A 43, 020401 (2025)
Published: January 2025
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Preparation and characterization of high-quality Bi1−xSbx thin films: A sputtering deposition approach
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J. Vac. Sci. Technol. A 43, 013406 (2025)
Published: January 2025
Journal Articles
Molecular dynamics investigation of heteroepitaxial growth of quaternary AlInGaN on wurtzite-GaN surface along [0001] direction
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J. Vac. Sci. Technol. A 43, 012702 (2025)
Published: December 2024
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kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates
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J. Vac. Sci. Technol. A 43, 012701 (2025)
Published: December 2024
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