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Journal Articles

Low temperature epitaxial growth of Cantor-nitride thin films by magnetic field assisted magnetron sputtering

Smita G. Rao, Pascal Manuel Illgner, Robert Boyd, Gyula Nagy, Philippe Djemia, Daniel Primetzhofer, Ivan Petrov, Arnaud le Febvrier, Per Eklund

J. Vac. Sci. Technol. A 41, 053415 (2023)

https://doi.org/10.1116/6.0002947

Published: August 2023

View article titled, Low temperature epitaxial growth of Cantor-nitride thin films by magnetic field assisted magnetron sputtering

Includes: Supplementary data

Journal Articles

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 052707 (2023)

https://doi.org/10.1116/6.0002884

Published: August 2023

View article titled, Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Journal Articles

Growth of SrMoO₃ thin films by suboxide molecular beam epitaxy

Tatiana Kuznetsova, Joseph Roth, Jason Lapano, Alexej Pogrebnyakov, Roman Engel-Herbert

J. Vac. Sci. Technol. A 41, 053412 (2023)

https://doi.org/10.1116/6.0002853

Published: August 2023

View article titled, Growth of SrMoO3 thin films by suboxide molecular beam epitaxy

Journal Articles

Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film

Yifeng Xu, Xiong Zhang, Ruiting Fang, Xuguang Luo, Lin Chen, Shenyu Xu, Zhiyi Lou, Jia Cui, Guohua Hu

J. Vac. Sci. Technol. A 41, 052706 (2023)

https://doi.org/10.1116/6.0002834

Published: August 2023

View article titled, Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film

Journal Articles

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Khan Alam, Rodrigo Ponce-Pérez, Kai Sun, Andrew Foley, Noboru Takeuchi, Arthur R. Smith

J. Vac. Sci. Technol. A 41, 053411 (2023)

https://doi.org/10.1116/6.0002546

Published: August 2023

View article titled, Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence

Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, Toshiki Makimoto

J. Vac. Sci. Technol. A 41, 052702 (2023)

https://doi.org/10.1116/6.0002522

Published: July 2023

View article titled, Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence

Journal Articles

Jahn–Teller-driven phase segregation in Mn_xCo_3−xO₄ spinel thin films

Miles D. Blanchet, Bethany E. Matthews, Steven R. Spurgeon, Steve M. Heald, Tamara Isaacs-Smith, Ryan B. Comes

J. Vac. Sci. Technol. A 41, 052703 (2023)

https://doi.org/10.1116/6.0002329

Published: July 2023

View article titled, Jahn–Teller-driven phase segregation in MnxCo3−xO4 spinel thin films

Includes: Supplementary data

Journal Articles

Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy

Zhe Chuan Feng, Deng Xie, Manika Tun Nafisa, Hao-Hsiung Lin, Weijie Lu, Jin-Ming Chen, Jeffrey Yiin, Kuei-Hsien Chen, Li-Chyong Chen, Benjamin Klein, Ian T. Ferguson

J. Vac. Sci. Technol. A 41, 053401 (2023)

https://doi.org/10.1116/6.0002665

Published: July 2023

View article titled, Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy

Journal Articles

Variation in thermal stability of Ge_1−xSn_x films for infrared device applications

Amanda N. Lemire, Kevin A. Grossklaus, Thomas E. Vandervelde

J. Vac. Sci. Technol. A 41, 052701 (2023)

https://doi.org/10.1116/6.0002680

Published: July 2023

View article titled, Variation in thermal stability of Ge1−xSnx films for infrared device applications

Includes: Supplementary data

Journal Articles

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

J. P. Olvera-Enríquez, L. I. Espinosa-Vega, I. E. Cortés-Mestizo, C. A. Mercado-Ornelas, F. E. Perea-Parrales, A. Belio-Manzano, C. M. Yee-Rendón, V. H. Méndez-García

J. Vac. Sci. Technol. A 41, 042714 (2023)

https://doi.org/10.1116/6.0002674

Published: July 2023

View article titled, Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

Journal Articles

Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

Wensen Ai, Xuejiang Chen

J. Vac. Sci. Technol. A 41, 042713 (2023)

https://doi.org/10.1116/6.0002686

Published: June 2023

View article titled, Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

Journal Articles

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

William A. Callahan, Edwin Supple, David Ginley, Michael Sanders, Brian P. Gorman, Ryan O’Hayre, Andriy Zakutayev

J. Vac. Sci. Technol. A 41, 043211 (2023)

https://doi.org/10.1116/6.0002645

Published: June 2023

View article titled, Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices

Includes: Supplementary data

Journal Articles

Crystallinity degradation and defect development in (Al_xGa_1−x)₂O₃ thin films with increased Al composition

Takumi Ohtsuki, Masataka Higashiwaki

J. Vac. Sci. Technol. A 41, 042712 (2023)

https://doi.org/10.1116/6.0002625

Published: June 2023

View article titled, Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition

Includes: Supplementary data

Journal Articles

Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Malak Refaei, Andrian Kuchuk, Rohith Allaparthi, Mirsaeid Sarollahia, Md Helal Uddin Maruf, Morgan E. Ware

J. Vac. Sci. Technol. A 41, 042711 (2023)

https://doi.org/10.1116/6.0002679

Published: June 2023

View article titled, Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Journal Articles

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Stefan P. Svensson, Nadeemullah A. Mahadik, Gela Kipshidze, Dmitri Donetski, Jingze Zhao, Gregory Belenky

J. Vac. Sci. Technol. A 41, 040802 (2023)

https://doi.org/10.1116/6.0002715

Published: June 2023

View article titled, Review of virtual substrate technologies for 6.3 Ångström lattice constants

Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern

J. Vac. Sci. Technol. A 41, 043411 (2023)

https://doi.org/10.1116/6.0002651

Published: June 2023

View article titled, Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Includes: Supplementary data

Journal Articles

Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn₃Sn thin films grown directly on sapphire (0001)

Sneha Upadhyay, Tyler Erickson, Hannah Hall, Ashok Shrestha, David C. Ingram, Kai Sun, Juan Carlos Moreno Hernandez, Gregorio Hernandez Cocoletzi, Noboru Takeuchi, Arthur R. Smith

J. Vac. Sci. Technol. A 41, 042710 (2023)

https://doi.org/10.1116/6.0002535

Published: June 2023

View article titled, Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001)

Journal Articles

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck

J. Vac. Sci. Technol. A 41, 042709 (2023)

https://doi.org/10.1116/6.0002594

Published: June 2023

View article titled, N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Journal Articles

Epitaxial growth of Bi, Sb, and Sn

Shuyu Liu, Ji Li, Xianglin Peng, Xu Dong, Yongkai Li, Peiyao Xiao, Zhiwei Wang, Wende Xiao

J. Vac. Sci. Technol. A 41, 042202 (2023)

https://doi.org/10.1116/6.0002641

Published: June 2023

View article titled, Epitaxial growth of Bi, Sb, and Sn

Includes: Supplementary data

Journal Articles

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 41, 042706 (2023)

https://doi.org/10.1116/6.0002530

Published: June 2023

View article titled, Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

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Topics

Low temperature epitaxial growth of Cantor-nitride thin films by magnetic field assisted magnetron sputtering

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Growth of SrMoO₃ thin films by suboxide molecular beam epitaxy

Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence

Jahn–Teller-driven phase segregation in Mn_xCo_3−xO₄ spinel thin films

Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy

Variation in thermal stability of Ge_1−xSn_x films for infrared device applications

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

Crystallinity degradation and defect development in (Al_xGa_1−x)₂O₃ thin films with increased Al composition

Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Properties of Schottky barrier diodes on heteroeptixial α-Ga₂O₃ thin films

Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn₃Sn thin films grown directly on sapphire (0001)

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Epitaxial growth of Bi, Sb, and Sn

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

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