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Journal Articles

Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method

D. A. Bauman, D. I. Panov, V. A. Spiridonov, A. Yu. Ivanov, P. A. Bogdanov, W. V. Lundin, E. Yu. Lundina, A. F. Tsatsulnikov, M. V. Tokarev, B. Y. Ber, S. S. Rachkov, D. Yu. Kazantsev, P. N. Brunkov, A. E. Romanov

J. Vac. Sci. Technol. A 43, 042804 (2025)

https://doi.org/10.1116/6.0004535

Published: May 2025

View articletitled, Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method

Journal Articles

Trap states and hydrogenation of implanted Si in semi-insulating Ga₂O₃(Fe)

A. Y. Polyakov, I. V. Schemerov, A. A. Vasilev, A. A. Romanov, P. B. Lagov, A. V. Miakonkikh, A. V. Chernykh, E. P. Romanteeva, S. V. Chernykh, O. I. Rabinovich, S. J. Pearton

J. Vac. Sci. Technol. A 43, 033403 (2025)

https://doi.org/10.1116/6.0004463

Published: March 2025

View articletitled, Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe)

Journal Articles

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou

J. Vac. Sci. Technol. A 42, 023418 (2024)

https://doi.org/10.1116/6.0003298

Published: February 2024

View articletitled, Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures

Journal Articles

Transport and trap states in proton irradiated ultra-thick κ-Ga₂O₃

A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton

J. Vac. Sci. Technol. A 41, 032705 (2023)

https://doi.org/10.1116/6.0002673

Published: April 2023

View articletitled, Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Includes: Supplementary data

Journal Articles

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton, Jihyun Kim

J. Vac. Sci. Technol. A 40, 020804 (2022)

https://doi.org/10.1116/6.0001701

Published: February 2022

View articletitled, Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Journal Articles

Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

Hector García, Helena Castán, Salvador Dueñas, Luis Bailón, Francesca Campabadal, Oihane Beldarrain, Miguel Zabala, Mireia Bargallo González, Joan Marc Rafí

J. Vac. Sci. Technol. A 31, 01A127 (2013)

https://doi.org/10.1116/1.4768167

Published: November 2012

View articletitled, Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

Journal Articles

Deep levels and compensation effects in sulfur-doped GaPN layers grown by organometallic vapor phase epitaxy

A. F. Basile, S. Hatakenaka, H. Okada, A. Wakahara

J. Vac. Sci. Technol. A 27, 531–536 (2009)

https://doi.org/10.1116/1.3117244

Published: April 2009

View articletitled, Deep levels and compensation effects in sulfur-doped GaPN layers grown by organometallic vapor phase epitaxy

Journal Articles

Characterization of plasma etching induced interface states at Ti ∕ p - Si Ge Schottky contacts

M. Mamor, A. Sellai

J. Vac. Sci. Technol. A 26, 705–709 (2008)

https://doi.org/10.1116/1.2913576

Published: June 2008

View articletitled, Characterization of plasma etching induced interface states at Ti ∕ p - Si Ge Schottky contacts

Journal Articles

Optical properties and electrical properties of heavily Al-doped ZnSe layers

D. C. Oh, T. Takai, I. H. Im, S. H. Park, T. Hanada, T. Yao, J. S. Song, J. H. Chang, H. Makino, C. S. Han, K. H. Koo

J. Vac. Sci. Technol. A 26, 259–264 (2008)

https://doi.org/10.1116/1.2836404

Published: February 2008

View articletitled, Optical properties and electrical properties of heavily Al-doped ZnSe layers

Journal Articles

Investigation of reactive ion etching of dielectrics and Si in C H F 3 ∕ O 2 or C H F 3 ∕ Ar for photovoltaic applications

C. Gatzert, A. W. Blakers, Prakash N. K. Deenapanray, D. Macdonald, F. D. Auret

J. Vac. Sci. Technol. A 24, 1857–1865 (2006)

https://doi.org/10.1116/1.2333571

Published: August 2006

View articletitled, Investigation of reactive ion etching of dielectrics and Si in C H F 3 ∕ O 2 or C H F 3 ∕ Ar for photovoltaic applications

Journal Articles

Comparison of a dominant electron trap in n -type and p -type GaNAs using deep-level transient spectroscopy

S. W. Johnston, S. R. Kurtz

J. Vac. Sci. Technol. A 24, 1252–1257 (2006)

https://doi.org/10.1116/1.2167081

Published: June 2006

View articletitled, Comparison of a dominant electron trap in n -type and p -type GaNAs using deep-level transient spectroscopy

Journal Articles

Integrated AlN/diamond heat spreaders for silicon device processing

S. N. Yoganand, K. Jagannadham, A. Karoui, H. Wang

J. Vac. Sci. Technol. A 20, 1974–1982 (2002)

https://doi.org/10.1116/1.1513643

Published: November 2002

View articletitled, Integrated AlN/diamond heat spreaders for silicon device processing

Journal Articles

Giant polarization in organic heterostructures

Ilja Thurzo, Thorsten U. Kampen, Dietrich R. T. Zahn

J. Vac. Sci. Technol. A 20, 1597–1602 (2002)

https://doi.org/10.1116/1.1495508

Published: September 2002

View articletitled, Giant polarization in organic heterostructures

Journal Articles

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Qin-Sheng Zhu, H. Nagai, Y. Kawaguchi, K. Hiramatsu, N. Sawaki

J. Vac. Sci. Technol. A 18, 261–267 (2000)

https://doi.org/10.1116/1.582144

Published: January 2000

View articletitled, Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Journal Articles

Thermally induced improvements on SiN x : H/InP devices

E. Redondo, N. Blanco, I. Mártil, G. González-Dı́az, R. Pelaez, S. Dueñas, H. Castán

J. Vac. Sci. Technol. A 17, 2178–2182 (1999)

https://doi.org/10.1116/1.582107

Published: July 1999

View articletitled, Thermally induced improvements on SiN x : H/InP devices

Journal Articles

Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

J. Jiang, O. O. Awadelkarim, J. Werking, G. Bersuker, Y. D. Chan

J. Vac. Sci. Technol. A 15, 875–879 (1997)

https://doi.org/10.1116/1.580724

Published: May 1997

View articletitled, Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

Journal Articles

Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes

R. M. Sieg, R. N. Sacks, P. N. Grillot, S. A. Ringel

J. Vac. Sci. Technol. A 14, 3283–3287 (1996)

https://doi.org/10.1116/1.580227

Published: November 1996

View articletitled, Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes

Journal Articles

Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy

L. Hernández, O. de Melo, M. Meléndez‐Lira, Z. Rivera‐Alvarez, I. Hernández‐Calderón

J. Vac. Sci. Technol. A 14, 2269–2274 (1996)

https://doi.org/10.1116/1.580059

Published: July 1996

View articletitled, Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy

Journal Articles

Characteristics of oxygen implanted indium phosphide

L. He, W. A. Anderson

J. Vac. Sci. Technol. A 11, 1474–1479 (1993)

https://doi.org/10.1116/1.578687

Published: July 1993

View articletitled, Characteristics of oxygen implanted indium phosphide

Journal Articles

Creation of deep gap states in Si during Cl₂ or HBr plasma etch exposures

O. O. Awadelkarim, T. Gu, R. A. Ditizio, P. I. Mikulan, S. J. Fonash, J. F. Rembetski, Y. D. Chan

J. Vac. Sci. Technol. A 11, 1332–1336 (1993)

https://doi.org/10.1116/1.578549

Published: July 1993

View articletitled, Creation of deep gap states in Si during Cl2 or HBr plasma etch exposures

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Control of iron doping during the growth of bulk gallium oxide crystals by the Czochralski method

Trap states and hydrogenation of implanted Si in semi-insulating Ga₂O₃(Fe)

Reliable electrical performance of β-Ga₂O₃ Schottky barrier diode at cryogenic temperatures

Transport and trap states in proton irradiated ultra-thick κ-Ga₂O₃

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

Deep levels and compensation effects in sulfur-doped GaPN layers grown by organometallic vapor phase epitaxy

Characterization of plasma etching induced interface states at Ti ∕ p - Si Ge Schottky contacts

Optical properties and electrical properties of heavily Al-doped ZnSe layers

Investigation of reactive ion etching of dielectrics and Si in C H F 3 ∕ O 2 or C H F 3 ∕ Ar for photovoltaic applications

Comparison of a dominant electron trap in n -type and p -type GaNAs using deep-level transient spectroscopy

Integrated AlN/diamond heat spreaders for silicon device processing

Giant polarization in organic heterostructures

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Thermally induced improvements on SiN x : H/InP devices

Fowler–Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

Improved substrate temperature stability during molecular beam epitaxy growth using indium free mounting of small substrates of various shapes

Investigation of deep levels in ZnSe:Cl films grown by molecular beam epitaxy

Characteristics of oxygen implanted indium phosphide

Creation of deep gap states in Si during Cl₂ or HBr plasma etch exposures

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