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Journal Articles

Unveiling interface structure and polarity of wurtzite ZnO film epitaxially grown on a-plane sapphire substrate

Lu Lu, Weiwei Meng, Yingmin Wang, Jianbing Qiang, Shao-Bo Mi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063211 (2023)
https://doi.org/10.1116/6.0003163
Published: November 2023
View article titled, Unveiling interface structure and polarity of wurtzite ZnO film epitaxially grown on <em>a</em>-plane sapphire substrate
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Includes: Supplementary data
Journal Articles

Influence of nitrogen vacancies on the decomposition route and age hardening of wurtzite Ti1−xAlxNy thin films

J. Salamania, A. F. Farhadizadeh, K. M. Calamba Kwick, I. C. Schramm, T. W. Hsu, L. J. S. Johnson, L. Rogström, M. Odén
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063413 (2023)
https://doi.org/10.1116/6.0003074
Published: November 2023
View article titled, Influence of nitrogen vacancies on the decomposition route and age hardening of wurtzite Ti<sub>1−x</sub>Al<sub>x</sub>N<sub>y</sub> thin films
Open the PDF for Influence of nitrogen vacancies on the decomposition route and age hardening of wurtzite Ti<sub>1−x</sub>Al<sub>x</sub>N<sub>y</sub> thin films in another window
Includes: Supplementary data
Journal Articles

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Peng Su, Wensen Ai, Xuejiang Chen, Lijun Liu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062704 (2023)
https://doi.org/10.1116/6.0003115
Published: October 2023
View article titled, Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth
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Journal Articles

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

Hwan-Seok Seo, Taeyoon Lee, Hyungjun Kim, Ivan Petrov, J. E. Greene
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063406 (2023)
https://doi.org/10.1116/6.0003072
Published: October 2023
View article titled, Phase composition of polycrystalline HfN<sub>x</sub> (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties
Open the PDF for Phase composition of polycrystalline HfN<sub>x</sub> (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties in another window
Journal Articles

Toward decoupling the effects of kinetic and potential ion energies: Ion flux dependent structural properties of thin (V,Al)N films deposited by pulsed filtered cathodic arc

Yeliz Unutulmazsoy, Dmitry Kalanov, Kyunghwan Oh, Soheil Karimi Aghda, Jürgen W. Gerlach, Nils Braun, Frans Munnik, Andriy Lotnyk, Jochen M. Schneider, André Anders
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063106 (2023)
https://doi.org/10.1116/6.0002927
Published: October 2023
View article titled, Toward decoupling the effects of kinetic and potential ion energies: Ion flux dependent structural properties of thin (V,Al)N films deposited by pulsed filtered cathodic arc
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Journal Articles

Evolution of β-Ga2O3 to γ-Ga2O3 solid-solution epitaxial films after high-temperature annealing

Kunyao Jiang, Jingyu Tang, Chengchao Xu, Kelly Xiao, Robert F. Davis, Lisa M. Porter
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062702 (2023)
https://doi.org/10.1116/6.0002962
Published: October 2023
View article titled, Evolution of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> to <em><em>γ</em></em>-Ga<sub>2</sub>O<sub>3</sub> solid-solution epitaxial films after high-temperature annealing
Open the PDF for Evolution of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> to <em><em>γ</em></em>-Ga<sub>2</sub>O<sub>3</sub> solid-solution epitaxial films after high-temperature annealing in another window
Includes: Supplementary data
Journal Articles

β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063205 (2023)
https://doi.org/10.1116/6.0003039
Published: September 2023
View article titled, β-Ga<sub>2</sub>O<sub>3</sub> orientation dependence of band offsets with SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>
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Journal Articles

Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering

Faezeh A. F. Lahiji, Samiran Bairagi, Roger Magnusson, Mauricio A. Sortica, Daniel Primetzhofer, Erik Ekström, Biplab Paul, Arnaud le Febvrier, Per Eklund
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063402 (2023)
https://doi.org/10.1116/6.0002914
Published: September 2023
View article titled, Growth and optical properties of NiO thin films deposited by pulsed dc reactive magnetron sputtering
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Includes: Supplementary data
Journal Articles

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC

Michael E. Liao, Kenny Huynh, Zhe Cheng, Jingjing Shi, Samuel Graham, Mark S. Goorsky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063203 (2023)
https://doi.org/10.1116/6.0002693
Published: September 2023
View article titled, Thermal transport and structural improvements due to annealing of wafer bonded β-Ga<sub>2</sub>O<sub>3</sub>|4H-SiC
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Journal Articles

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Khan Alam, Rodrigo Ponce-Pérez, Kai Sun, Andrew Foley, Noboru Takeuchi, Arthur R. Smith
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053411 (2023)
https://doi.org/10.1116/6.0002546
Published: August 2023
View article titled, Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

Fatih F. Ince, Mega Frost, Subhashree Seth, Darryl Shima, Thomas J. Rotter, Ganesh Balakrishnan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052704 (2023)
https://doi.org/10.1116/6.0002681
Published: July 2023
View article titled, MBE growth of In<sub>0.53</sub>Ga<sub>0.47</sub>Sb on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP substrates using the interfacial misfit dislocation arrays
Open the PDF for MBE growth of In<sub>0.53</sub>Ga<sub>0.47</sub>Sb on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP substrates using the interfacial misfit dislocation arrays in another window
Journal Articles

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

Heli Seppänen, Igor Prozheev, Christoffer Kauppinen, Sami Suihkonen, Kenichiro Mizohata, Harri Lipsanen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052401 (2023)
https://doi.org/10.1116/6.0002705
Published: July 2023
View article titled, Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
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Journal Articles

Variation in thermal stability of Ge1−xSnx films for infrared device applications

Amanda N. Lemire, Kevin A. Grossklaus, Thomas E. Vandervelde
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052701 (2023)
https://doi.org/10.1116/6.0002680
Published: July 2023
View article titled, Variation in thermal stability of Ge<sub>1−x</sub>Sn<sub>x</sub> films for infrared device applications
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Includes: Supplementary data
Journal Articles

Need for complementary techniques for reliable characterization of MoS2-like layers

Aditya Deshpande, Koki Hojo, Koichi Tanaka, Pedro Arias, Hicham Zaid, Michael Liao, Mark Goorsky, Suneel Kodambaka
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042203 (2023)
https://doi.org/10.1116/6.0002701
Published: June 2023
View article titled, Need for complementary techniques for reliable characterization of MoS<sub>2</sub>-like layers
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Journal Articles

Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition

Takumi Ohtsuki, Masataka Higashiwaki
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042712 (2023)
https://doi.org/10.1116/6.0002625
Published: June 2023
View article titled, Crystallinity degradation and defect development in (Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films with increased Al composition
Open the PDF for Crystallinity degradation and defect development in (Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films with increased Al composition in another window
Includes: Supplementary data
Journal Articles

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Stefan P. Svensson, Nadeemullah A. Mahadik, Gela Kipshidze, Dmitri Donetski, Jingze Zhao, Gregory Belenky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 040802 (2023)
https://doi.org/10.1116/6.0002715
Published: June 2023
View article titled, Review of virtual substrate technologies for 6.3 Ångström lattice constants
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Journal Articles

Molecular beam epitaxy and crystal structure of majority a-plane-oriented and substrate-strained Mn3Sn thin films grown directly on sapphire (0001)

Sneha Upadhyay, Tyler Erickson, Hannah Hall, Ashok Shrestha, David C. Ingram, Kai Sun, Juan Carlos Moreno Hernandez, Gregorio Hernandez Cocoletzi, Noboru Takeuchi, Arthur R. Smith
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042710 (2023)
https://doi.org/10.1116/6.0002535
Published: June 2023
View article titled, Molecular beam epitaxy and crystal structure of majority <em>a</em>-plane-oriented and substrate-strained Mn<sub>3</sub>Sn thin films grown directly on sapphire (0001)
Open the PDF for Molecular beam epitaxy and crystal structure of majority <em>a</em>-plane-oriented and substrate-strained Mn<sub>3</sub>Sn thin films grown directly on sapphire (0001) in another window
Journal Articles

N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042709 (2023)
https://doi.org/10.1116/6.0002594
Published: June 2023
View article titled, N<sub>2</sub>O grown high Al composition nitrogen doped β-(AlGa)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> using MOCVD
Open the PDF for N<sub>2</sub>O grown high Al composition nitrogen doped β-(AlGa)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> using MOCVD in another window
Journal Articles

Epitaxial growth of Bi, Sb, and Sn

Shuyu Liu, Ji Li, Xianglin Peng, Xu Dong, Yongkai Li, Peiyao Xiao, Zhiwei Wang, Wende Xiao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042202 (2023)
https://doi.org/10.1116/6.0002641
Published: June 2023
View article titled, Epitaxial growth of Bi, Sb, and Sn
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Includes: Supplementary data
Journal Articles

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042706 (2023)
https://doi.org/10.1116/6.0002530
Published: June 2023
View article titled, Structural characterization of epitaxial γ-Ta<sub>2</sub>N thin films and AlN/γ-Ta<sub>2</sub>N heterostructures on SiC substrates
Open the PDF for Structural characterization of epitaxial γ-Ta<sub>2</sub>N thin films and AlN/γ-Ta<sub>2</sub>N heterostructures on SiC substrates in another window