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Journal Articles

Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates

T. Blaikie, Y. Shi, M. C. Tam, B. D. Moreno, Z. R. Wasilewski

J. Vac. Sci. Technol. A 42, 032704 (2024)

https://doi.org/10.1116/6.0003455

Published: April 2024

View article titled, Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates

Journal Articles

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Peng Su, Wensen Ai, Xuejiang Chen, Lijun Liu

J. Vac. Sci. Technol. A 41, 062704 (2023)

https://doi.org/10.1116/6.0003115

Published: October 2023

View article titled, Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Journal Articles

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

Michael E. Liao, Kenny Huynh, Zhe Cheng, Jingjing Shi, Samuel Graham, Mark S. Goorsky

J. Vac. Sci. Technol. A 41, 063203 (2023)

https://doi.org/10.1116/6.0002693

Published: September 2023

View article titled, Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC

Journal Articles

MBE growth of In_0.53Ga_0.47Sb on In_0.53Ga_0.47As/InP substrates using the interfacial misfit dislocation arrays

Fatih F. Ince, Mega Frost, Subhashree Seth, Darryl Shima, Thomas J. Rotter, Ganesh Balakrishnan

J. Vac. Sci. Technol. A 41, 052704 (2023)

https://doi.org/10.1116/6.0002681

Published: July 2023

View article titled, MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

Journal Articles

Variation in thermal stability of Ge_1−xSn_x films for infrared device applications

Amanda N. Lemire, Kevin A. Grossklaus, Thomas E. Vandervelde

J. Vac. Sci. Technol. A 41, 052701 (2023)

https://doi.org/10.1116/6.0002680

Published: July 2023

View article titled, Variation in thermal stability of Ge1−xSnx films for infrared device applications

Includes: Supplementary data

Journal Articles

Review of virtual substrate technologies for 6.3 Ångström lattice constants

Stefan P. Svensson, Nadeemullah A. Mahadik, Gela Kipshidze, Dmitri Donetski, Jingze Zhao, Gregory Belenky

J. Vac. Sci. Technol. A 41, 040802 (2023)

https://doi.org/10.1116/6.0002715

Published: June 2023

View article titled, Review of virtual substrate technologies for 6.3 Ångström lattice constants

Journal Articles

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck

J. Vac. Sci. Technol. A 41, 042709 (2023)

https://doi.org/10.1116/6.0002594

Published: June 2023

View article titled, N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Journal Articles

Epitaxial growth of Bi, Sb, and Sn

Shuyu Liu, Ji Li, Xianglin Peng, Xu Dong, Yongkai Li, Peiyao Xiao, Zhiwei Wang, Wende Xiao

J. Vac. Sci. Technol. A 41, 042202 (2023)

https://doi.org/10.1116/6.0002641

Published: June 2023

View article titled, Epitaxial growth of Bi, Sb, and Sn

Includes: Supplementary data

Journal Articles

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer

J. Vac. Sci. Technol. A 41, 042706 (2023)

https://doi.org/10.1116/6.0002530

Published: June 2023

View article titled, Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Journal Articles

Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga₂O₃ superlattices of μ-Fe₂O₃ and β-(Al_xGa_1−x)₂O₃

Elline C. Hettiaratchy, Binbin Wang, Ashok Dheenan, Joe McGlone, Nidhin Kurian Kalarickal, Núria Bagués, Steven Ringel, David W. McComb, Siddharth Rajan, Roberto C. Myers

J. Vac. Sci. Technol. A 40, 062708 (2022)

https://doi.org/10.1116/6.0002207

Published: November 2022

View article titled, Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3

Journal Articles

Synthesis of short-wave infrared Ge_1−ySn_y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

Chi Xu, Ting Hu, Aixin Zhang, Dhruve A. Ringwala, José Menéndez, John Kouvetakis

J. Vac. Sci. Technol. A 40, 063405 (2022)

https://doi.org/10.1116/6.0002052

Published: November 2022

View article titled, Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

Journal Articles

Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics

Nima Nateghi, Remo A. Masut

J. Vac. Sci. Technol. A 40, 052702 (2022)

https://doi.org/10.1116/6.0001958

Published: August 2022

View article titled, Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics

Includes: Supplementary data

Journal Articles

Early stage nucleation mechanism for SiC(0001) surface epitaxial growth

Wensen Ai, Xuejiang Chen, Jianmei Feng

J. Vac. Sci. Technol. A 40, 033201 (2022)

https://doi.org/10.1116/6.0001684

Published: March 2022

View article titled, Early stage nucleation mechanism for SiC(0001) surface epitaxial growth

Journal Articles

Spherical-periodic order and relevant short-range structural units in simple crystal structures

Shuang Zhang, Chuang Dong, Peter Häussler

J. Vac. Sci. Technol. A 40, 022201 (2022)

https://doi.org/10.1116/6.0001535

Published: February 2022

View article titled, Spherical-periodic order and relevant short-range structural units in simple crystal structures

Journal Articles

Effect of buffer termination on intermixing and conductivity in LaTiO₃/SrTiO₃ heterostructures integrated on Si(100)

Tongjie Chen, Kamyar Ahmadi-Majlan, Zheng Hui Lim, Zhan Zhang, Joseph H. Ngai, Divine P. Kumah

J. Vac. Sci. Technol. A 40, 013206 (2022)

https://doi.org/10.1116/6.0001464

Published: December 2021

View article titled, Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)

Journal Articles

Photoluminescence, thermoluminescence, and cathodoluminescence of optimized cubic Gd₂O₃:Bi phosphor powder

Mogahid H. M. Abdelrehman, Robin E. Kroon, Abdelrhman Yousif, Hassan A. A. Seed Ahmed, Hendrik C. Swart

J. Vac. Sci. Technol. A 38, 063207 (2020)

https://doi.org/10.1116/6.0000567

Published: October 2020

View article titled, Photoluminescence, thermoluminescence, and cathodoluminescence of optimized cubic Gd2O3:Bi phosphor powder

Journal Articles

LiF by atomic layer deposition—Made easy

Julie N. Kvalvik, Kristian B. Kvamme, Kjetil Almaas, Amund Ruud, Henrik H. Sønsteby, Ola Nilsen

J. Vac. Sci. Technol. A 38, 050401 (2020)

https://doi.org/10.1116/6.0000314

Published: August 2020

View article titled, LiF by atomic layer deposition—Made easy

Includes: Supplementary data

Journal Articles

Atomic-layer etching of GaN by using an HBr neutral beam

Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Hideyuki Kurihara, Seiji Samukawa

J. Vac. Sci. Technol. A 38, 032603 (2020)

https://doi.org/10.1116/6.0000126

Published: April 2020

View article titled, Atomic-layer etching of GaN by using an HBr neutral beam

Journal Articles

Formation of MoS₂ from elemental Mo and S using reactive molecular dynamics simulations

Rimei Chen, Arben Jusufi, Alan Schilowitz, Ashlie Martini

J. Vac. Sci. Technol. A 38, 022201 (2020)

https://doi.org/10.1116/1.5128377

Published: February 2020

View article titled, Formation of MoS2 from elemental Mo and S using reactive molecular dynamics simulations

Includes: Supplementary data

Journal Articles

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Adéla Jagerová, Petr Malinský, Romana Mikšová, Pavla Nekvindová, Jakub Cajzl, Shavkat Akhmadaliev, Václav Holý, Anna Macková

J. Vac. Sci. Technol. A 37, 061406 (2019)

https://doi.org/10.1116/1.5125320

Published: November 2019

View article titled, Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

NARROW

Topics

Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates

Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

MBE growth of In_0.53Ga_0.47Sb on In_0.53Ga_0.47As/InP substrates using the interfacial misfit dislocation arrays

Variation in thermal stability of Ge_1−xSn_x films for infrared device applications

Review of virtual substrate technologies for 6.3 Ångström lattice constants

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Epitaxial growth of Bi, Sb, and Sn

Structural characterization of epitaxial γ-Ta₂N thin films and AlN/γ-Ta₂N heterostructures on SiC substrates

Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga₂O₃ superlattices of μ-Fe₂O₃ and β-(Al_xGa_1−x)₂O₃

Synthesis of short-wave infrared Ge_1−ySn_y semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics

Early stage nucleation mechanism for SiC(0001) surface epitaxial growth

Spherical-periodic order and relevant short-range structural units in simple crystal structures

Effect of buffer termination on intermixing and conductivity in LaTiO₃/SrTiO₃ heterostructures integrated on Si(100)

Photoluminescence, thermoluminescence, and cathodoluminescence of optimized cubic Gd₂O₃:Bi phosphor powder

LiF by atomic layer deposition—Made easy

Atomic-layer etching of GaN by using an HBr neutral beam

Formation of MoS₂ from elemental Mo and S using reactive molecular dynamics simulations

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

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