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Journal Articles

Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency

Cheng Liu, Nikhil Pokharel, Qinchen Lin, Miguel A. Betancourt Ponce, Jian Sun, Dominic Lane, Thomas J. De Prinse, Nelson Tansu, Padma Gopalan, Chirag Gupta, Shubhra S. Pasayat, Luke J. Mawst
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062705 (2023)
https://doi.org/10.1116/6.0002997
Published: November 2023
View article titled, Ultrahigh density InGaN/GaN nanopyramid quantum dots for visible emissions with high quantum efficiency
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Journal Articles

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

J. P. Olvera-Enríquez, L. I. Espinosa-Vega, I. E. Cortés-Mestizo, C. A. Mercado-Ornelas, F. E. Perea-Parrales, A. Belio-Manzano, C. M. Yee-Rendón, V. H. Méndez-García
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042714 (2023)
https://doi.org/10.1116/6.0002674
Published: July 2023
View article titled, Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes
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Journal Articles

Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

Malak Refaei, Andrian Kuchuk, Rohith Allaparthi, Mirsaeid Sarollahia, Md Helal Uddin Maruf, Morgan E. Ware
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042711 (2023)
https://doi.org/10.1116/6.0002679
Published: June 2023
View article titled, Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy
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Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Published: June 2023
View article titled, Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films
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Includes: Supplementary data
Journal Articles

7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 030401 (2023)
https://doi.org/10.1116/6.0002580
Published: April 2023
View article titled, 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup>
Open the PDF for 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup> in another window
Journal Articles

InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy

Margaret A. Stevens, Wayne McKenzie, Gerald Baumgartner, Joel Q. Grim, Samuel G. Carter, Allan S. Bracker
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032703 (2023)
https://doi.org/10.1116/6.0002572
Published: April 2023
View article titled, InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy
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Journal Articles

Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity

Zelong Fan, Zuoyan Qin, Lei Jin, Yuan Cao, Zhongyu Yue, Baikui Li, Honglei Wu, Zhenhua Sun
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013204 (2023)
https://doi.org/10.1116/5.0133162
Published: December 2022
View article titled, Aluminum nitride crystal-based photodetector with bias polarity-dependent spectral selectivity
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Includes: Supplementary data
Journal Articles

Critical review of Ohmic and Schottky contacts to β-Ga2O3

Luke A. M. Lyle
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 060802 (2022)
https://doi.org/10.1116/6.0002144
Published: November 2022
View article titled, Critical review of Ohmic and Schottky contacts to β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063407 (2022)
https://doi.org/10.1116/6.0002186
Published: November 2022
View article titled, Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers
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Journal Articles

Ga+-focused ion beam damage in n-type Ga2O3

Xinyi Xia, Nahid Sultan Al-Mamun, Daudi Warywoba, Fan Ren, Aman Haque, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053403 (2022)
https://doi.org/10.1116/5.0099892
Published: August 2022
View article titled, Ga<sup>+</sup>-focused ion beam damage in n-type Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Sneha Banerjee, Peng Zhang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 030802 (2022)
https://doi.org/10.1116/6.0001724
Published: May 2022
View article titled, Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering
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Journal Articles

Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers

Mehmet Fidan, Özhan Ünverdi, Cem Çelebi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 032203 (2022)
https://doi.org/10.1116/6.0001758
Published: April 2022
View article titled, Enhancing the photo-response characteristics of graphene/n-Si based Schottky barrier photodiodes by increasing the number of graphene layers
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Journal Articles

Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

Beibei Ge, Daisuke Ohori, Yi-Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022405 (2022)
https://doi.org/10.1116/6.0001607
Published: February 2022
View article titled, Room-temperature and high-quality HfO<sub>2</sub>/SiO<sub>2</sub> gate stacked film grown by neutral beam enhanced atomic layer deposition
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Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063405 (2021)
https://doi.org/10.1116/6.0001347
Published: September 2021
View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga<sub>2</sub>O<sub>3</sub> rectifiers
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Journal Articles

Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode

Ayeong Kim, Geonyeop Lee, Jihyun Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 053412 (2021)
https://doi.org/10.1116/6.0001217
Published: August 2021
View article titled, Capacitive β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector with graphene electrode
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Includes: Supplementary data
Journal Articles

Growth of topological insulator Bi2Se3 particles on GaAs via droplet epitaxy

Sivakumar Vishnuvardhan Mambakkam, Saadia Nasir, Wilder Acuna, Joshua M. O. Zide, Stephanie Law
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 053407 (2021)
https://doi.org/10.1116/6.0001157
Published: August 2021
View article titled, Growth of topological insulator Bi<sub>2</sub>Se<sub>3</sub> particles on GaAs via droplet epitaxy
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Includes: Supplementary data
Journal Articles

Temperature dependent performance of ITO Schottky contacts on β-Ga2O3

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Marko Tadjer, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 053405 (2021)
https://doi.org/10.1116/6.0001211
Published: August 2021
View article titled, Temperature dependent performance of ITO Schottky contacts on β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature

Karen Heinselman, Patrick Walker, Andrew Norman, Philip Parilla, David Ginley, Andriy Zakutayev
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 040402 (2021)
https://doi.org/10.1116/6.0001003
Published: June 2021
View article titled, Performance and reliability of β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes at high temperature
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Includes: Supplementary data
Journal Articles

Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film

Ala H. Sabeeh, Alyssa N. Brigman, Jerzy Ruzyllo
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032802 (2021)
https://doi.org/10.1116/6.0000833
Published: May 2021
View article titled, Effect of anti-reflection coating on the performance of silicon solar cells with nanocrystalline quantum dots downshifting film
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Journal Articles

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Yong-Hang Zhang, David J. Smith
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 030803 (2021)
https://doi.org/10.1116/6.0000802
Published: April 2021
View article titled, Heterovalent semiconductor structures and devices grown by molecular beam epitaxy
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