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Journal Articles

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

William A. Callahan, Edwin Supple, David Ginley, Michael Sanders, Brian P. Gorman, Ryan O’Hayre, Andriy Zakutayev

J. Vac. Sci. Technol. A 41, 043211 (2023)

https://doi.org/10.1116/6.0002645

Published: June 2023

View article titled, Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices

Includes: Supplementary data

Journal Articles

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt

J. Vac. Sci. Technol. A 41, 043102 (2023)

https://doi.org/10.1116/6.0002642

Published: May 2023

View article titled, Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Journal Articles

NiO/β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton

J. Vac. Sci. Technol. A 41, 032701 (2023)

https://doi.org/10.1116/6.0002393

Published: March 2023

View article titled, NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Journal Articles

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Sneha Banerjee, Peng Zhang

J. Vac. Sci. Technol. A 40, 030802 (2022)

https://doi.org/10.1116/6.0001724

Published: May 2022

View article titled, Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Journal Articles

Errata: “Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride” [J. Vac. Sci. Technol. A 38, 050805 (2020)]”

Kayla A. Cooley, Haila M. Aldosari, Kezhou Yang, Suzanne E. Mohney

J. Vac. Sci. Technol. A 38, 067001 (2020)

https://doi.org/10.1116/6.0000712

Published: November 2020

View article titled, Errata: “Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride” [J. Vac. Sci. Technol. A 38, 050805 (2020)]”

Journal Articles

Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

Kayla A. Cooley, Haila M. Aldosari, Kezhou Yang, Suzanne E. Mohney

J. Vac. Sci. Technol. A 38, 050805 (2020)

https://doi.org/10.1116/6.0000321

Published: September 2020

View article titled, Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

Journal Articles

X-ray photoelectron spectroscopy study for band alignments of BaTiO₃/Ga₂O₃ and In₂O₃/Ga₂O₃ heterostructures

Yusong Zhi, Zeng Liu, Xia Wang, Sisi Li, Xiaolong Wang, Xulong Chu, Peigang Li, Daoyou Guo, Zhenping Wu, Weihua Tang

J. Vac. Sci. Technol. A 38, 023202 (2020)

https://doi.org/10.1116/1.5138715

Published: January 2020

View article titled, X-ray photoelectron spectroscopy study for band alignments of BaTiO3/Ga2O3 and In2O3/Ga2O3 heterostructures

Includes: Supplementary data

Journal Articles

High stability near-broken gap junction for multijunction photovoltaics

Forrest Johnson, Joel Pankow, Glenn Teeter, Brian Benton, Stephen A. Campbell

J. Vac. Sci. Technol. A 37, 011201 (2019)

https://doi.org/10.1116/1.5054401

Published: December 2018

View article titled, High stability near-broken gap junction for multijunction photovoltaics

Journal Articles

Oxidation and sublimation suppression of PbTe thermoelectric legs by plasma coated ceramic layers

Sang Hyun Park, Yeongseon Kim, Chung-Yul Yoo, Giwan Yoon

J. Vac. Sci. Technol. A 34, 061101 (2016)

https://doi.org/10.1116/1.4964131

Published: October 2016

View article titled, Oxidation and sublimation suppression of PbTe thermoelectric legs by plasma coated ceramic layers

Journal Articles

Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

Clint D. Frye, Sergei O. Kucheyev, James H. Edgar, Lars F. Voss, Adam M. Conway, Qinghui Shao, Rebecca J. Nikolić

J. Vac. Sci. Technol. A 33, 031101 (2015)

https://doi.org/10.1116/1.4917010

Published: April 2015

View article titled, Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

Journal Articles

Shielding technique for deposition of Au electrical contacts on graphene by sputtering

Bing Li, Genhua Pan, Nawfal Y. Jamil, Laith Al Taan, Shakil Awan, Neil Avent

J. Vac. Sci. Technol. A 33, 030601 (2015)

https://doi.org/10.1116/1.4916589

Published: March 2015

View article titled, Shielding technique for deposition of Au electrical contacts on graphene by sputtering

Journal Articles

Formation of PtSi Schottky barrier MOSFETs using plasma etching

Young Min Woo, Wan Sik Hwang, Won Jong Yoo

J. Vac. Sci. Technol. A 33, 021307 (2015)

https://doi.org/10.1116/1.4904361

Published: December 2014

View article titled, Formation of PtSi Schottky barrier MOSFETs using plasma etching

Journal Articles

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Sami Bolat, Burak Tekcan, Cagla Ozgit-Akgun, Necmi Biyikli, Ali Kemal Okyay

J. Vac. Sci. Technol. A 33, 01A143 (2015)

https://doi.org/10.1116/1.4903365

Published: December 2014

View article titled, Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Journal Articles

Study on contact distortion during high aspect ratio contact SiO₂ etching

Jong Kyu Kim, Sung Ho Lee, Sung Il Cho, Geun Young Yeom

J. Vac. Sci. Technol. A 33, 021303 (2015)

https://doi.org/10.1116/1.4901872

Published: December 2014

View article titled, Study on contact distortion during high aspect ratio contact SiO2 etching

Journal Articles

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Olof Tengstrand, Nils Nedfors, Lars Fast, Axel Flink, Ulf Jansson, Per Eklund, Lars Hultman

J. Vac. Sci. Technol. A 32, 041509 (2014)

https://doi.org/10.1116/1.4882856

Published: June 2014

View article titled, Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Journal Articles

Nb-B-C thin films for electrical contact applications deposited by magnetron sputtering

Nils Nedfors, Olof Tengstrand, Per Eklund, Lars Hultman, Ulf Jansson

J. Vac. Sci. Technol. A 32, 041503 (2014)

https://doi.org/10.1116/1.4875135

Published: May 2014

View article titled, Nb-B-C thin films for electrical contact applications deposited by magnetron sputtering

Journal Articles

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

Jong Kyu Kim, Sung Il Cho, Sung Ho Lee, Chan Kyu Kim, Kyung Suk Min, Seung Hyun Kang, Geun Young Yeom

J. Vac. Sci. Technol. A 31, 061310 (2013)

https://doi.org/10.1116/1.4823335

Published: September 2013

View article titled, Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

Journal Articles

Toward a new world of molecular devices: Making metallic contacts to molecules

Amy V. Walker

J. Vac. Sci. Technol. A 31, 050816 (2013)

https://doi.org/10.1116/1.4816843

Published: August 2013

View article titled, Toward a new world of molecular devices: Making metallic contacts to molecules

Journal Articles

Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi₂Sr₂CaCu₂O_8+δ/Au contacts

Hiroki Ishida, Takahiro Kato, Atsushi Saito, Kanji Yasui

J. Vac. Sci. Technol. A 30, 031101 (2012)

https://doi.org/10.1116/1.4707151

Published: April 2012

View article titled, Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi2Sr2CaCu2O8+δ/Au contacts

Journal Articles

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

M. M. R. Howlader, F. Zhang, M. J. Deen, T. Suga, A. Yamauchi

J. Vac. Sci. Technol. A 29, 021007 (2011)

https://doi.org/10.1116/1.3549114

Published: January 2011

View article titled, Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

NARROW

Topics

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

NiO/β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Errata: “Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride” [J. Vac. Sci. Technol. A 38, 050805 (2020)]”

Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

X-ray photoelectron spectroscopy study for band alignments of BaTiO₃/Ga₂O₃ and In₂O₃/Ga₂O₃ heterostructures

High stability near-broken gap junction for multijunction photovoltaics

Oxidation and sublimation suppression of PbTe thermoelectric legs by plasma coated ceramic layers

Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

Shielding technique for deposition of Au electrical contacts on graphene by sputtering

Formation of PtSi Schottky barrier MOSFETs using plasma etching

Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Study on contact distortion during high aspect ratio contact SiO₂ etching

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Nb-B-C thin films for electrical contact applications deposited by magnetron sputtering

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

Toward a new world of molecular devices: Making metallic contacts to molecules

Improved characteristics of mesa-type intrinsic Josephson junctions by vacuum cleavage process for Bi₂Sr₂CaCu₂O_8+δ/Au contacts

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

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