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Journal Articles

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Siyuan Wang, Kai Zhang, Le Zhai, Li Huang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 063210 (2024)
https://doi.org/10.1116/6.0003824
Published: October 2024
View article titled, Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast
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Journal Articles

Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures

Editor’s Pick
Alexandre Chapotot, Jérémie Chrétien, Oleh Fesiienko, Erwine Pargon, Jinyoun Cho, Kristof Dessein, Abderraouf Boucherif, Gwenaëlle Hamon, Maxime Darnon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 013203 (2024)
https://doi.org/10.1116/6.0003236
Published: January 2024
View article titled, Enhancing minority carrier lifetime in Ge: Insights from HF and HCl cleaning procedures
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Journal Articles

Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices

O. Fesiienko, C. Petit-Etienne, M. Darnon, A. Soltani, H. Maher, E. Pargon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033004 (2023)
https://doi.org/10.1116/6.0002339
Published: April 2023
View article titled, Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices
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Journal Articles

Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si

François Boulard, Valentin Bacquié, Aurélien Tavernier, Nicolas Possémé
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033002 (2023)
https://doi.org/10.1116/6.0002434
Published: March 2023
View article titled, Role of SiCl<sub>4</sub> addition in CH<sub>3</sub>F/O<sub>2</sub> based chemistry for Si<sub>3</sub>N<sub>4</sub> etching selectively to SiO<sub>2</sub>, SiCO, and Si
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Journal Articles

Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption

Editor’s Pick
Takeru Saito, Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042406 (2022)
https://doi.org/10.1116/6.0001908
Published: June 2022
View article titled, Multiple layers of aluminum silicate and silicon dioxide deposited by room-temperature atomic layer deposition for enhanced cation sorption
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Journal Articles

Surface-to-bulk core level shift in CoFe2O4 thin films

Arjun Subedi, Detian Yang, Yu Yun, Xiaoshan Xu, Peter A. Dowben
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 023201 (2022)
https://doi.org/10.1116/6.0001436
Published: January 2022
View article titled, Surface-to-bulk core level shift in CoFe<sub>2</sub>O<sub>4</sub> thin films
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Includes: Supplementary data
Journal Articles

Titanium infiltration into ultrathin PMMA brushes

Pierre Giovanni Mani-Gonzalez, Caitlin McFeely, Matthew Snelgrove, Kyle Shiel, Jesus Alfredo Hernandez Marquez, Robert O’Connor
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 040403 (2021)
https://doi.org/10.1116/6.0001061
Published: June 2021
View article titled, Titanium infiltration into ultrathin PMMA brushes
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Journal Articles

Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition

Masaki Hirayama, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 052407 (2020)
https://doi.org/10.1116/6.0000388
Published: August 2020
View article titled, Low-energy high-flux ion bombardment-induced interfacial mixing during Al<sub>2</sub>O<sub>3</sub> plasma-enhanced atomic layer deposition
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Journal Articles

Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces

Liwang Ye, Theodosia Gougousi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 01A105 (2016)
https://doi.org/10.1116/1.4931568
Published: September 2015
View article titled, Diffusion and interface evolution during the atomic layer deposition of TiO<sub>2</sub> on GaAs(100) and InAs(100) surfaces
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Journal Articles

Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO2/Si nanofilms

Pierre Giovanni Mani-Gonzalez, Milton Oswaldo Vazquez-Lepe, Alberto Herrera-Gomez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 010602 (2015)
https://doi.org/10.1116/1.4904496
Published: December 2014
View article titled, Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO<sub>2</sub>/Si nanofilms
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Journal Articles

Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle

Haiwon Kim, Ilsub Chung, Seokyun Kim, Seungwoo Shin, Wooduck Jung, Ryong Hwang, Choonsik Jeong, Hanna Hwang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 01A146 (2015)
https://doi.org/10.1116/1.4904147
Published: December 2014
View article titled, Improved film quality of plasma enhanced atomic layer deposition SiO<sub>2</sub> using plasma treatment cycle
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Journal Articles

Atomic layer deposition of ZnO on Cu-nanoclusters for methanol synthesis

Ziyu Zhang, Matthew Patterson, Maoming Ren, Ying Wang, John C. Flake, Phillip T. Sprunger, Richard L. Kurtz
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 31, 01A144 (2013)
https://doi.org/10.1116/1.4772460
Published: December 2012
View article titled, Atomic layer deposition of ZnO on Cu-nanoclusters for methanol synthesis
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Journal Articles

Interface layer in hafnia/Si films as a function of ALD cycles

Pierre-Giovanni Mani-Gonzalez, Milton-Oswaldo Vazquez-Lepe, Francisco Espinosa-Magaña, Alberto Herrera-Gomez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 31, 010601 (2013)
https://doi.org/10.1116/1.4747324
Published: August 2012
View article titled, Interface layer in hafnia/Si films as a function of ALD cycles
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Journal Articles

Cross characterization of ultrathin interlayers in HfO2 high-k stacks by angle resolved x-ray photoelectron spectroscopy, medium energy ion scattering, and grazing incidence extreme ultraviolet reflectometry

Matus Banyay, Larissa Juschkin, Eric Bersch, Daniel Franca, Michael Liehr, Alain Diebold
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 30, 041506 (2012)
https://doi.org/10.1116/1.4718433
Published: May 2012
View article titled, Cross characterization of ultrathin interlayers in HfO<sub>2</sub> high-k stacks by angle resolved x-ray photoelectron spectroscopy, medium energy ion scattering, and grazing incidence extreme ultraviolet reflectometry
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Journal Articles

Combination of characterization techniques for atomic layer deposition MoO3 coatings: From the amorphous to the orthorhombic α-MoO3 crystalline phase

Madeleine Diskus, Ola Nilsen, Helmer Fjellvåg, Spyros Diplas, Pablo Beato, Clare Harvey, Evelien van Schrojenstein Lantman, Bert M. Weckhuysen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 30, 01A107 (2012)
https://doi.org/10.1116/1.3643350
Published: September 2011
View article titled, Combination of characterization techniques for atomic layer deposition MoO<sub>3</sub> coatings: From the amorphous to the orthorhombic α-MoO<sub>3</sub> crystalline phase
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Journal Articles

Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry

Kevin J. Hughes, James R. Engstrom
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 30, 01A102 (2012)
https://doi.org/10.1116/1.3625564
Published: September 2011
View article titled, Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry
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Includes: Supplementary data
Journal Articles

Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100)

P. R. Fitzpatrick, J. G. Ekerdt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 1397–1406 (2008)
https://doi.org/10.1116/1.2976564
Published: October 2008
View article titled, Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100)
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Journal Articles

Synthesis and characterization of nanoscale Al–Si–O gradient membranes

V. Trouillet, H. Tröße, M. Bruns, E. Nold, R. G. White
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 25, 927–931 (2007)
https://doi.org/10.1116/1.2731342
Published: July 2007
View article titled, Synthesis and characterization of nanoscale Al–Si–O gradient membranes
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Journal Articles

Low-resistivity atomic-layer-deposited- TaN with atomic-layer-deposited- TaN /physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect

Akira Furuya, Nobuyuki Ohtsuka, Naofumi Ohashi, Seiichi Kondo, Shinichi Ogawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 103–105 (2006)
https://doi.org/10.1116/1.2137332
Published: December 2005
View article titled, Low-resistivity atomic-layer-deposited- TaN with atomic-layer-deposited- TaN /physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect
Open the PDF for Low-resistivity atomic-layer-deposited- TaN with atomic-layer-deposited- TaN /physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect in another window
Journal Articles

Site-selective electroless plating on amino-terminated diamond substrate patterned by 126 nm vacuum ultraviolet light lithography

Atsushi Hozumi, Shuichi Asakura, Akio Fuwa, Naoto Shirahata
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 23, 1029–1033 (2005)
https://doi.org/10.1116/1.1863937
Published: June 2005
View article titled, Site-selective electroless plating on amino-terminated diamond substrate patterned by 126 nm vacuum ultraviolet light lithography
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