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Journal Articles

Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H2/N2/Ar plasma

Wangu Kang, Ji Sang Ahn, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062401 (2023)
https://doi.org/10.1116/6.0002970
Published: September 2023
View article titled, Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H<sub>2</sub>/N<sub>2</sub>/Ar plasma
Open the PDF for Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H<sub>2</sub>/N<sub>2</sub>/Ar plasma in another window
Includes: Supplementary data
Journal Articles

Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film

Yifeng Xu, Xiong Zhang, Ruiting Fang, Xuguang Luo, Lin Chen, Shenyu Xu, Zhiyi Lou, Jia Cui, Guohua Hu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052706 (2023)
https://doi.org/10.1116/6.0002834
Published: August 2023
View article titled, Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar <em>a</em>-plane GaN film
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Journal Articles

Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system

Hsin-Ying Lee, Guo-Long Zhu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053406 (2023)
https://doi.org/10.1116/6.0002826
Published: July 2023
View article titled, Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system
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Journal Articles

Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy

Zhe Chuan Feng, Deng Xie, Manika Tun Nafisa, Hao-Hsiung Lin, Weijie Lu, Jin-Ming Chen, Jeffrey Yiin, Kuei-Hsien Chen, Li-Chyong Chen, Benjamin Klein, Ian T. Ferguson
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053401 (2023)
https://doi.org/10.1116/6.0002665
Published: July 2023
View article titled, Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy
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Journal Articles

Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

Marco Lisker, Mamathamba Kalishettyhalli Mahadevaiah, Keerthi Dorai Swamy Reddy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042406 (2023)
https://doi.org/10.1116/6.0002424
Published: July 2023
View article titled, Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
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Journal Articles

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices

William A. Callahan, Edwin Supple, David Ginley, Michael Sanders, Brian P. Gorman, Ryan O’Hayre, Andriy Zakutayev
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043211 (2023)
https://doi.org/10.1116/6.0002645
Published: June 2023
View article titled, Ultrathin stable Ohmic contacts for high-temperature operation of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> devices
Open the PDF for Ultrathin stable Ohmic contacts for high-temperature operation of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> devices in another window
Includes: Supplementary data
Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Published: June 2023
View article titled, Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films
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Includes: Supplementary data
Journal Articles

Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations

Joseph R. Vella, David B. Graves
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042601 (2023)
https://doi.org/10.1116/6.0002719
Published: June 2023
View article titled, Near-surface damage and mixing in Si-Cl<sub>2</sub>-Ar atomic layer etching processes: Insights from molecular dynamics simulations
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Journal Articles

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Fedor Hrubišák, Kristína Hušeková, Xiang Zheng, Alica Rosová, Edmund Dobročka, Milan Ťapajna, Matej Mičušík, Peter Nádaždy, Fridrich Egyenes, Javad Keshtkar, Eva Kováčová, James W. Pomeroy, Martin Kuball, Filip Gucmann
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042708 (2023)
https://doi.org/10.1116/6.0002649
Published: June 2023
View article titled, Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices
Open the PDF for Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices in another window
Includes: Supplementary data
Journal Articles

Growth mechanisms of interfacial carbon layers at the epitaxial Al2O3(0001)/Cu(111) interface as application for epitaxial film lift-off

Hung-Chieh Tsai, Brecht Marien, François Chancerel, Stefan De Gendt, Steven Brems
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042201 (2023)
https://doi.org/10.1116/6.0002568
Published: May 2023
View article titled, Growth mechanisms of interfacial carbon layers at the epitaxial Al<sub>2</sub>O<sub>3</sub>(0001)/Cu(111) interface as application for epitaxial film lift-off
Open the PDF for Growth mechanisms of interfacial carbon layers at the epitaxial Al<sub>2</sub>O<sub>3</sub>(0001)/Cu(111) interface as application for epitaxial film lift-off in another window
Includes: Supplementary data
Journal Articles

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043102 (2023)
https://doi.org/10.1116/6.0002642
Published: May 2023
View article titled, Ge-ion implantation and activation in (100) β-Ga<sub>2</sub>O<sub>3</sub> for ohmic contact improvement using pulsed rapid thermal annealing
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Journal Articles

Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness

J. A. Michaels, N. Delegan, Y. Tsaturyan, J. R. Renzas, D. D. Awschalom, J. G. Eden, F. J. Heremans
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032607 (2023)
https://doi.org/10.1116/6.0002447
Published: May 2023
View article titled, Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness
Open the PDF for Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness in another window
Includes: Supplementary data
Journal Articles

Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023205 (2023)
https://doi.org/10.1116/6.0002453
Published: March 2023
View article titled, Type-II band alignment for atomic layer deposited HfSiO<sub>4</sub> on α-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Type-II band alignment for atomic layer deposited HfSiO<sub>4</sub> on α-Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO2 surfaces

Charisse Marie D. Cagomoc, Michiro Isobe, Eric A. Hudson, Satoshi Hamaguchi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023003 (2023)
https://doi.org/10.1116/6.0002381
Published: February 2023
View article titled, Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO<sub>2</sub> surfaces
Open the PDF for Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO<sub>2</sub> surfaces in another window
Journal Articles

Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance

Roberta Hawkins, Xinglu Wang, Naim Moumen, Robert M. Wallace, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023203 (2023)
https://doi.org/10.1116/6.0002264
Published: February 2023
View article titled, Impact of process anneals on high-k/β-Ga<sub>2</sub>O<sub>3</sub> interfaces and capacitance
Open the PDF for Impact of process anneals on high-k/β-Ga<sub>2</sub>O<sub>3</sub> interfaces and capacitance in another window
Journal Articles

Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions

Charisse Marie D. Cagomoc, Michiro Isobe, Satoshi Hamaguchi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023001 (2023)
https://doi.org/10.1116/6.0002380
Published: February 2023
View article titled, Molecular dynamics study of SiO<sub>2</sub> nanohole etching by fluorocarbon ions
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Includes: Supplementary data
Journal Articles

Feasibility study of dative bond formation for bilayer silicon growth under excessive strain

Kumar Vishal, Zhonghang Ji, Yan Zhuang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022201 (2023)
https://doi.org/10.1116/6.0002222
Published: February 2023
View article titled, Feasibility study of dative bond formation for bilayer silicon growth under excessive strain
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Journal Articles

Optimization of chemical mechanical polishing of (010) β-Ga2O3

Michael E. Liao, Kenny Huynh, Lezli Matto, Dorian P. Luccioni, Mark S. Goorsky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013205 (2023)
https://doi.org/10.1116/6.0002241
Published: January 2023
View article titled, Optimization of chemical mechanical polishing of (010) β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H2

Ji Sang Ahn, Wangu Kang, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012405 (2023)
https://doi.org/10.1116/6.0002308
Published: December 2022
View article titled, Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H<sub>2</sub>
Open the PDF for Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H<sub>2</sub> in another window
Includes: Supplementary data
Journal Articles

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Eitan Hershkovitz, Fan Ren, Honggyu Kim, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063408 (2022)
https://doi.org/10.1116/6.0002257
Published: November 2022
View article titled, Type II band alignment of NiO/α-Ga<sub>2</sub>O<sub>3</sub> for annealing temperatures up to 600 °C
Open the PDF for Type II band alignment of NiO/α-Ga<sub>2</sub>O<sub>3</sub> for annealing temperatures up to 600 °C in another window