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Journal Articles

Best practices for performing quantitative TOF-SIMS analyses

Alan M. Spool, Lorie Finney

J. Vac. Sci. Technol. A 42, 043204 (2024)

https://doi.org/10.1116/6.0003660

Published: July 2024

View article titled, Best practices for performing quantitative TOF-SIMS analyses

Journal Articles

Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects

Atefeh Fathzadeh, Philippe Bezard, Maxime Darnon, Inge Manders, Thierry Conard, Ilse Hoflijk, Frederic Lazzarino, Stefan de Gendt

J. Vac. Sci. Technol. A 42, 033006 (2024)

https://doi.org/10.1116/6.0003380

Published: April 2024

View article titled, Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects

Journal Articles

Bottom angle control mechanism and optimization of slanted gratings for optical applications

Jiuru Gao, Chanjuan Liu, Zhiwei He, Shuo Dong, Kaidong Xu, Shiwei Zhuang

J. Vac. Sci. Technol. A 42, 023403 (2024)

https://doi.org/10.1116/6.0003221

Published: January 2024

View article titled, Bottom angle control mechanism and optimization of slanted gratings for optical applications

Journal Articles

Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge

J. Zgheib, L. Berthelot, J. Tranchant, N. Ginot, M.-P. Besland, A. Caillard, T. Minea, A. Rhallabi, P.-Y. Jouan

J. Vac. Sci. Technol. A 41, 063003 (2023)

https://doi.org/10.1116/6.0002857

Published: September 2023

View article titled, Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge

Journal Articles

Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors

Fang-Fang Ma, Quan-Zhi Zhang, Dao-Man Han, Zi-Lan Xiong, Ming Gao, You-Nian Wang

J. Vac. Sci. Technol. A 41, 053002 (2023)

https://doi.org/10.1116/6.0002585

Published: July 2023

View article titled, Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors

Journal Articles

Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Siegfried Hofmann, Feng-Min Zhong, Hao Yang, Jiang-Yong Wang, Cong-Kang Xu

J. Vac. Sci. Technol. A 41, 013408 (2023)

https://doi.org/10.1116/6.0002233

Published: January 2023

View article titled, Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Journal Articles

Temporal evolution of the ion flux to the target in rotational RF multimagnetron plasma

Yasunori Ohtsu, Koya Yasuda, Julian Schulze

J. Vac. Sci. Technol. A 40, 053006 (2022)

https://doi.org/10.1116/6.0001994

Published: August 2022

View article titled, Temporal evolution of the ion flux to the target in rotational RF multimagnetron plasma

Journal Articles

Plasma-enhanced atomic layer deposition: Correlating O 2 plasma parameters and species to blister formation and conformal film growth

Andreas Werbrouck, Kevin Van de Kerckhove, Diederik Depla, Dirk Poelman, Philippe F. Smet, Jolien Dendooven, Christophe Detavernier

J. Vac. Sci. Technol. A 39, 062402 (2021)

https://doi.org/10.1116/6.0001094

Published: September 2021

View article titled, Plasma-enhanced atomic layer deposition: Correlating O 2 plasma parameters and species to blister formation and conformal film growth

Includes: Supplementary data

Journal Articles

Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask

William J. Mitchell, Brian J. Thibeault, Demis D. John, Thomas E. Reynolds

J. Vac. Sci. Technol. A 39, 043204 (2021)

https://doi.org/10.1116/6.0001030

Published: May 2021

View article titled, Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask

Journal Articles

Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

Masahito Mori, Shoki Irie, Yugo Osano, Koji Eriguchi, Kouichi Ono

J. Vac. Sci. Technol. A 39, 043002 (2021)

https://doi.org/10.1116/6.0000970

Published: May 2021

View article titled, Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

Journal Articles

Universal scaling relationship for atomic layer etching

Keren J. Kanarik, Samantha Tan, Wenbing Yang, Ivan L. Berry, Yang Pan, Richard A. Gottscho

J. Vac. Sci. Technol. A 39, 010401 (2021)

https://doi.org/10.1116/6.0000762

Published: December 2020

View article titled, Universal scaling relationship for atomic layer etching

Journal Articles

Growth of dense, hard yet low-stress Ti_0.40Al_0.27W_0.33N nanocomposite films with rotating substrate and no external substrate heating

Zhengtao Wu, Olof Tengstrand, Babak Bakhit, Jun Lu, J. E. Greene, Lars Hultman, Ivan Petrov, Grzegorz Greczynski

J. Vac. Sci. Technol. A 38, 023006 (2020)

https://doi.org/10.1116/1.5140357

Published: January 2020

View article titled, Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating

Journal Articles

Mechanism of highly selective SiO₂ etching over Si₃N₄ using a cyclic process with BCl₃ and fluorocarbon gas chemistries

Miyako Matsui, Tatehito Usui, Kenichi Kuwahara

J. Vac. Sci. Technol. A 38, 023004 (2020)

https://doi.org/10.1116/1.5129568

Published: January 2020

View article titled, Mechanism of highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Journal Articles

Low temperature (T_s/T_m < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Michelle Marie S. Villamayor, Julien Keraudy, Tetsuhide Shimizu, Rommel Paulo B. Viloan, Robert Boyd, Daniel Lundin, Joseph E. Greene, Ivan Petrov, Ulf Helmersson

J. Vac. Sci. Technol. A 36, 061511 (2018)

https://doi.org/10.1116/1.5052702

Published: November 2018

View article titled, Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Journal Articles

Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties

Guillaume Le Dain, Ahmed Rhallabi, Christophe Cardinaud, Aurélie Girard, Marie-Claude Fernandez, Mohamed Boufnichel, Fabrice Roqueta

J. Vac. Sci. Technol. A 36, 03E109 (2018)

https://doi.org/10.1116/1.5023590

Published: May 2018

View article titled, Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties

Journal Articles

Space-resolved plasma diagnostics in a hybrid (Cr,Al)N process

Kirsten Bobzin, Tobias Brögelmann, Nathan C. Kruppe, Martin Engels

J. Vac. Sci. Technol. A 36, 031515 (2018)

https://doi.org/10.1116/1.5020151

Published: May 2018

View article titled, Space-resolved plasma diagnostics in a hybrid (Cr,Al)N process

Journal Articles

Effect of synchronized bias in the deposition of TiB₂ thin films using high power impulse magnetron sputtering

Nils Nedfors, Oleksiy Vozniy, Johanna Rosen

J. Vac. Sci. Technol. A 36, 031510 (2018)

https://doi.org/10.1116/1.5003194

Published: April 2018

View article titled, Effect of synchronized bias in the deposition of TiB2 thin films using high power impulse magnetron sputtering

Journal Articles

New insight into desorption step by Ar⁺ ion-bombardment during the atomic layer etching of silicon

Sonam D. Sherpa, Peter L. G. Ventzek, Myungsuk Lee, Gyeong S. Hwang, Alok Ranjan

J. Vac. Sci. Technol. A 36, 031303 (2018)

https://doi.org/10.1116/1.5016530

Published: April 2018

View article titled, New insight into desorption step by Ar+ ion-bombardment during the atomic layer etching of silicon

Journal Articles

Surface morphology control of Nb thin films by biased target ion beam deposition

Salinporn Kittiwatanakul, Nattawut Anuniwat, Nam Dao, Stuart A. Wolf, Jiwei Lu

J. Vac. Sci. Technol. A 36, 031507 (2018)

https://doi.org/10.1116/1.5023723

Published: March 2018

View article titled, Surface morphology control of Nb thin films by biased target ion beam deposition

Journal Articles

Noninvasive electrical plasma monitoring method using reactor substrates as alternative current-sensing electrodes

Ji-Hwan Park, Chin-Wook Chung

J. Vac. Sci. Technol. A 36, 031302 (2018)

https://doi.org/10.1116/1.5017944

Published: March 2018

View article titled, Noninvasive electrical plasma monitoring method using reactor substrates as alternative current-sensing electrodes

NARROW

Topics

Best practices for performing quantitative TOF-SIMS analyses

Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects

Bottom angle control mechanism and optimization of slanted gratings for optical applications

Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge

Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors

Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Temporal evolution of the ion flux to the target in rotational RF multimagnetron plasma

Plasma-enhanced atomic layer deposition: Correlating O 2 plasma parameters and species to blister formation and conformal film growth

Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask

Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas

Universal scaling relationship for atomic layer etching

Growth of dense, hard yet low-stress Ti_0.40Al_0.27W_0.33N nanocomposite films with rotating substrate and no external substrate heating

Mechanism of highly selective SiO₂ etching over Si₃N₄ using a cyclic process with BCl₃ and fluorocarbon gas chemistries

Low temperature (T_s/T_m < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias

Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties

Space-resolved plasma diagnostics in a hybrid (Cr,Al)N process

Effect of synchronized bias in the deposition of TiB₂ thin films using high power impulse magnetron sputtering

New insight into desorption step by Ar⁺ ion-bombardment during the atomic layer etching of silicon

Surface morphology control of Nb thin films by biased target ion beam deposition

Noninvasive electrical plasma monitoring method using reactor substrates as alternative current-sensing electrodes

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