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Journal Articles

Comparisons of atomic layer etching of silicon in Cl2 and HBr-containing plasmas

Mahmoud A. I. Elgarhy, Qinzhen Hao, Heejung Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 012601 (2025)
https://doi.org/10.1116/6.0004092
Published: December 2024
View article titled, Comparisons of atomic layer etching of silicon in Cl<sub>2</sub> and HBr-containing plasmas
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Journal Articles

Empirical analysis of a hollow cathode’s intensity distribution in the vacuum ultraviolet range

S. C. Olsen, D. D. Allred, R. R. Vanfleet
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 043004 (2024)
https://doi.org/10.1116/6.0003633
Published: June 2024
View article titled, Empirical analysis of a hollow cathode’s intensity distribution in the vacuum ultraviolet range
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Journal Articles

Impact of vacuum ultraviolet photons on ultrathin polymethylmethacrylate during plasma etching

Shikhar Arvind, Esben W. Larsen, Philippe Bezard, John Petersen, Stefan De Gendt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 033009 (2024)
https://doi.org/10.1116/6.0003541
Published: April 2024
View article titled, Impact of vacuum ultraviolet photons on ultrathin polymethylmethacrylate during plasma etching
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Includes: Supplementary data
Journal Articles

Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy

G. Tan, H. Fukuta, K. K. H. De Silva, A. Matsuda, M. Yoshimura, M. Yoshimoto, K. Umezawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063202 (2022)
https://doi.org/10.1116/6.0001971
Published: September 2022
View article titled, Characterization of vacuum ultraviolet-irradiated surface modification of CoO(111) crystal by low-energy atom scattering spectroscopy
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Journal Articles

Spin- and time-resolved photoelectron spectroscopy and diffraction studies using time-of-flight momentum microscopes

Featured
Gerd Schönhense, Hans-Joachim Elmers
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 020802 (2022)
https://doi.org/10.1116/6.0001500
Published: January 2022
View article titled, Spin- and time-resolved photoelectron spectroscopy and diffraction studies using time-of-flight momentum microscopes
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Journal Articles

Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity

Adam Pranda, Chen Li, Youngsik Seo, Gottlieb S. Oehrlein
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 043001 (2021)
https://doi.org/10.1116/6.0001015
Published: May 2021
View article titled, Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity
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Journal Articles

Vacuum ultraviolet enhanced atomic layer etching of ruthenium films

Editor’s Pick
Brennan M. Coffey, Himamshu C. Nallan, John G. Ekerdt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 012601 (2021)
https://doi.org/10.1116/6.0000742
Published: December 2020
View article titled, Vacuum ultraviolet enhanced atomic layer etching of ruthenium films
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Includes: Supplementary data
Journal Articles

Modeling of an atmospheric pressure plasma-liquid anodic interface: Solvated electrons and silver reduction

Yashuang Zheng, Lijun Wang, Peter Bruggeman
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063005 (2020)
https://doi.org/10.1116/6.0000575
Published: October 2020
View article titled, Modeling of an atmospheric pressure plasma-liquid anodic interface: Solvated electrons and silver reduction
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Journal Articles

Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor

Robert Soriano, Gilles Cunge, Nader Sadeghi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 043002 (2020)
https://doi.org/10.1116/6.0000134
Published: June 2020
View article titled, Vacuum ultraviolet-absorption spectroscopy and delocalized plasma-induced emission used for the species detection in a down-stream soft-etch plasma reactor
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Journal Articles

Utilizing photosensitive polymers to evaluate UV radiation exposures in different plasma chamber configurations

Luxherta Buzi, Hiroyuki Miyazoe, Matthew. P. Sagianis, Nathan Marchack, John M. Papalia, Sebastian. U. Engelmann
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033006 (2020)
https://doi.org/10.1116/1.5143032
Published: March 2020
View article titled, Utilizing photosensitive polymers to evaluate UV radiation exposures in different plasma chamber configurations
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Journal Articles

Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics

Askar A. Rezvanov, Andrey V. Miakonkikh, Dmitry S. Seregin, Alexey S. Vishnevskiy, Konstantin A. Vorotilov, Konstantin V. Rudenko, Mikhail R. Baklanov
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033005 (2020)
https://doi.org/10.1116/1.5143417
Published: March 2020
View article titled, Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
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Includes: Supplementary data
Journal Articles

Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma

Editor’s Pick
Emilia W. Hirsch, Linfeng Du, Demetre J. Economou, Vincent M. Donnelly
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 023009 (2020)
https://doi.org/10.1116/1.5138189
Published: January 2020
View article titled, Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma
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Journal Articles

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Editor’s Pick
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, En-Tzu Lee, Yiming Li, Yao-Jen Lee, Takuya Ozaki, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 021003 (2019)
https://doi.org/10.1116/1.5079692
Published: January 2019
View article titled, Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam
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Journal Articles

Initial nucleation stage in photo-CVD of GeH4 on SiO2 substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time

Housei Akazawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 041505 (2018)
https://doi.org/10.1116/1.5040380
Published: June 2018
View article titled, Initial nucleation stage in photo-CVD of GeH<sub>4</sub> on SiO<sub>2</sub> substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time
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Journal Articles

Excitation mechanisms in a nonequilibrium helium plasma jet emerging in ambient air at 1 atm

Tam Nguyen, Eduardo Hernandez, Vincent M. Donnelly, Demetre J. Economou
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 04F406 (2018)
https://doi.org/10.1116/1.5023693
Published: June 2018
View article titled, Excitation mechanisms in a nonequilibrium helium plasma jet emerging in ambient air at 1 atm
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Journal Articles

Surface roughening of photoresist after change of the photon/radical and ion treatment sequence

Yan Zhang, Takuya Takeuchi, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 060606 (2017)
https://doi.org/10.1116/1.4994218
Published: September 2017
View article titled, Surface roughening of photoresist after change of the photon/radical and ion treatment sequence
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Journal Articles

Ag+ reduction and silver nanoparticle synthesis at the plasma–liquid interface by an RF driven atmospheric pressure plasma jet: Mechanisms and the effect of surfactant

V. S. Santosh K. Kondeti, Urvashi Gangal, Shurik Yatom, Peter J. Bruggeman
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 061302 (2017)
https://doi.org/10.1116/1.4995374
Published: July 2017
View article titled, Ag<sup>+</sup> reduction and silver nanoparticle synthesis at the plasma–liquid interface by an RF driven atmospheric pressure plasma jet: Mechanisms and the effect of surfactant
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Journal Articles

Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns

Hiroyuki Miyazoe, Sebastian U. Engelmann, Michael A. Guillorn, Dongfei Pei, Weiyi Li, Jason L. Lauer, J. Leon Shohet, Nicholas C. M. Fuller
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 05C306 (2017)
https://doi.org/10.1116/1.4985541
Published: June 2017
View article titled, Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns
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Journal Articles

Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation

Xiangyu Guo, Dongfei Pei, Huifeng Zheng, Weiyi Li, J. Leon Shohet, Sean W. King, Yi-Hung Lin, Hok-Sum Fung, Cheng-Chi Chen, Yoshio Nishi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021509 (2017)
https://doi.org/10.1116/1.4974315
Published: January 2017
View article titled, Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation
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Journal Articles

Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology

Onintza Ros, Erwine Pargon, Marc Fouchier, Pascal Gouraud, Sebastien Barnola
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021306 (2017)
https://doi.org/10.1116/1.4972228
Published: December 2016
View article titled, Gate patterning strategies to reduce the gate shifting phenomenon for 14 nm fully depleted silicon-on-insulator technology
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