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Journal Articles

Growth of SrMoO3 thin films by suboxide molecular beam epitaxy

Tatiana Kuznetsova, Joseph Roth, Jason Lapano, Alexej Pogrebnyakov, Roman Engel-Herbert
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053412 (2023)
https://doi.org/10.1116/6.0002853
Published: August 2023
View article titled, Growth of SrMoO<sub>3</sub> thin films by suboxide molecular beam epitaxy
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Journal Articles

Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma

Sen Chen, Jiaxuan Ren, Douhao Yang, Lijun Sang, Bowen Liu, Qiang Chen, Zhongwei Liu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042401 (2023)
https://doi.org/10.1116/6.0002484
Published: May 2023
View article titled, Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma
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Includes: Supplementary data
Journal Articles

Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition

Jessica A. Murdzek, Ann Lii-Rosales, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032603 (2023)
https://doi.org/10.1116/6.0002488
Published: April 2023
View article titled, Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition
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Includes: Supplementary data
Journal Articles

Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes

Jonas C. Gertsch, Jonathan L. Partridge, Austin M. Cano, Joel W. Clancey, Victor M. Bright, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 012603 (2023)
https://doi.org/10.1116/6.0002149
Published: January 2023
View article titled, Thermal atomic layer etching of VO<sub>2</sub> using sequential BCl<sub>3</sub> and SF<sub>4</sub> exposures: Observation of conversion, ligand-exchange, and oxidation state changes
Open the PDF for Thermal atomic layer etching of VO<sub>2</sub> using sequential BCl<sub>3</sub> and SF<sub>4</sub> exposures: Observation of conversion, ligand-exchange, and oxidation state changes in another window
Includes: Supplementary data
Journal Articles

Investigation of the magnetron balancing effect on the ionized flux fraction and deposition rate of sputtered titanium species for the high-power impulse magnetron sputtering pulses of different lengths

Anna Kapran, Vinicius G. Antunes, Zdeněk Hubička, Charles Ballage, Tiberiu Minea
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013003 (2023)
https://doi.org/10.1116/6.0002309
Published: December 2022
View article titled, Investigation of the magnetron balancing effect on the ionized flux fraction and deposition rate of sputtered titanium species for the high-power impulse magnetron sputtering pulses of different lengths
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Journal Articles

Growth behavior and substrate selective deposition of polypyrrole, polythiophene, and polyaniline by oxidative chemical vapor deposition and molecular layer deposition

Jung-Sik Kim, Hwan Oh, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063401 (2022)
https://doi.org/10.1116/6.0002036
Published: September 2022
View article titled, Growth behavior and substrate selective deposition of polypyrrole, polythiophene, and polyaniline by oxidative chemical vapor deposition and molecular layer deposition
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Journal Articles

Desorption characteristics of selenium and tellurium thin films

Derrick S. H. Liu, Maria Hilse, Roman Engel-Herbert
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053407 (2022)
https://doi.org/10.1116/6.0002013
Published: September 2022
View article titled, Desorption characteristics of selenium and tellurium thin films
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Journal Articles

Operating modes and target erosion in high power impulse magnetron sputtering

M. Rudolph, N. Brenning, H. Hajihoseini, M. A. Raadu, J. Fischer, J. T. Gudmundsson, D. Lundin
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 043005 (2022)
https://doi.org/10.1116/6.0001919
Published: June 2022
View article titled, Operating modes and target erosion in high power impulse magnetron sputtering
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Journal Articles

Room-temperature atomic layer deposition of iron oxide using plasma excited humidified argon

Kazuki Yoshida, Issei Nagata, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022408 (2022)
https://doi.org/10.1116/6.0001622
Published: February 2022
View article titled, Room-temperature atomic layer deposition of iron oxide using plasma excited humidified argon
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Journal Articles

Reaction mechanism studies on atomic layer deposition process of AlF3

Heta-Elisa Nieminen, Mikko Ritala
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022401 (2022)
https://doi.org/10.1116/6.0001624
Published: January 2022
View article titled, Reaction mechanism studies on atomic layer deposition process of AlF<sub>3</sub>
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Journal Articles

Reactor scale simulations of ALD and ALE: Ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor

Angel Yanguas-Gil, Joseph A. Libera, Jeffrey W. Elam
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 062404 (2021)
https://doi.org/10.1116/6.0001212
Published: September 2021
View article titled, Reactor scale simulations of ALD and ALE: Ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor
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Journal Articles

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Bireswar Mandol, Neha Mahuli, Kenichi Ohno, Lance Scudder, Shaibal K. Sarkar
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032414 (2021)
https://doi.org/10.1116/6.0000896
Published: April 2021
View article titled, Atomic layer deposition of chromium oxide—An interplay between deposition and etching
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Journal Articles

Sticking coefficients of selenium and tellurium

Derrick S. H. Liu, Maria Hilse, Roman Engel-Herbert
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 023413 (2021)
https://doi.org/10.1116/6.0000736
Published: February 2021
View article titled, Sticking coefficients of selenium and tellurium
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Includes: Supplementary data
Journal Articles

Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum

Tyler J. Myers, Austin M. Cano, Diane K. Lancaster, Joel W. Clancey, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 021001 (2021)
https://doi.org/10.1116/6.0000680
Published: February 2021
View article titled, Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al<sub>2</sub>O<sub>3</sub> by trimethylaluminum
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Journal Articles

Atomic layer deposition of hafnium and zirconium oxyfluoride thin films

Neha Mahuli, Andrew S. Cavanagh, Steven M. George
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 022403 (2021)
https://doi.org/10.1116/6.0000731
Published: January 2021
View article titled, Atomic layer deposition of hafnium and zirconium oxyfluoride thin films
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Journal Articles

Ultrasonic atomization of titanium isopropoxide at room temperature for TiO2 atomic layer deposition

Moon-Hyung Jang, Yu Lei
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 062405 (2020)
https://doi.org/10.1116/6.0000464
Published: October 2020
View article titled, Ultrasonic atomization of titanium isopropoxide at room temperature for TiO<sub>2</sub> atomic layer deposition
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Includes: Supplementary data
Journal Articles

Atomic layer deposition of HfO2 films using carbon-free tetrakis(tetrahydroborato)hafnium and water

Devika Choudhury, David J. Mandia, Ryan R. Langeslay, Angel Yanguas-Gil, Steven Letourneau, Alfred P. Sattelberger, Mahalingam Balasubramanium, Anil U. Mane, Massimiliano Delferro, Jeffrey W. Elam
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 042407 (2020)
https://doi.org/10.1116/6.0000053
Published: June 2020
View article titled, Atomic layer deposition of HfO<sub>2</sub> films using carbon-free tetrakis(tetrahydroborato)hafnium and water
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Journal Articles

Assessment of atomic layer deposited TiO2 photocatalytic self-cleaning by quartz crystal microbalance

Théo Henry, Paolo Martins, Etienne Eustache, Bernard Servet, Laurent Divay, Pierre Jouanne, Philippe Grasset, Jean-Paul Dudon, Patrick Hugonnot, Karl Fleury-Frenette
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 043404 (2020)
https://doi.org/10.1116/6.0000198
Published: June 2020
View article titled, Assessment of atomic layer deposited TiO<sub>2</sub> photocatalytic self-cleaning by quartz crystal microbalance
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Journal Articles

Atomic layer deposition of amorphous antimony sulfide (a-Sb2S3) as semiconductor sensitizer in extremely thin absorber solar cell

Neha Mahuli, Debabrata Halder, Ankan Paul, Shaibal K. Sarkar
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032407 (2020)
https://doi.org/10.1116/6.0000031
Published: March 2020
View article titled, Atomic layer deposition of amorphous antimony sulfide (a-Sb<sub>2</sub>S<sub>3</sub>) as semiconductor sensitizer in extremely thin absorber solar cell
Open the PDF for Atomic layer deposition of amorphous antimony sulfide (a-Sb<sub>2</sub>S<sub>3</sub>) as semiconductor sensitizer in extremely thin absorber solar cell in another window
Includes: Supplementary data
Journal Articles

Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O2 or O3 for oxidation and WCl6 as the chlorinating etchant

Wenyi Xie, Gregory N. Parsons
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 022605 (2020)
https://doi.org/10.1116/1.5134430
Published: January 2020
View article titled, Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O<sub>2</sub> or O<sub>3</sub> for oxidation and WCl<sub>6</sub> as the chlorinating etchant
Open the PDF for Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O<sub>2</sub> or O<sub>3</sub> for oxidation and WCl<sub>6</sub> as the chlorinating etchant in another window
Includes: Supplementary data