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Journal Articles

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

William A. Callahan, Edwin Supple, David Ginley, Michael Sanders, Brian P. Gorman, Ryan O’Hayre, Andriy Zakutayev

J. Vac. Sci. Technol. A 41, 043211 (2023)

https://doi.org/10.1116/6.0002645

Published: June 2023

View article titled, Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices

Includes: Supplementary data

Journal Articles

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt

J. Vac. Sci. Technol. A 41, 043102 (2023)

https://doi.org/10.1116/6.0002642

Published: May 2023

View article titled, Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Journal Articles

Critical review of Ohmic and Schottky contacts to β-Ga₂O₃

Luke A. M. Lyle

J. Vac. Sci. Technol. A 40, 060802 (2022)

https://doi.org/10.1116/6.0002144

Published: November 2022

View article titled, Critical review of Ohmic and Schottky contacts to β-Ga2O3

Journal Articles

Thermal stability of band offsets of NiO/GaN

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, S. J. Pearton

J. Vac. Sci. Technol. A 40, 053401 (2022)

https://doi.org/10.1116/6.0002033

Published: July 2022

View article titled, Thermal stability of band offsets of NiO/GaN

Journal Articles

Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry

A. Parisini, P. Mazzolini, O. Bierwagen, C. Borelli, K. Egbo, A. Sacchi, M. Bosi, L. Seravalli, A. Tahraoui, R. Fornari

J. Vac. Sci. Technol. A 40, 042701 (2022)

https://doi.org/10.1116/6.0001857

Published: June 2022

View article titled, Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry

Includes: Supplementary data

Journal Articles

High synergy atomic layer etching of AlGaN/GaN with HBr and Ar

Kevin G. Crawford, James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne, David A. J. Moran

J. Vac. Sci. Technol. A 40, 042601 (2022)

https://doi.org/10.1116/6.0001862

Published: May 2022

View article titled, High synergy atomic layer etching of AlGaN/GaN with HBr and Ar

Journal Articles

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Sneha Banerjee, Peng Zhang

J. Vac. Sci. Technol. A 40, 030802 (2022)

https://doi.org/10.1116/6.0001724

Published: May 2022

View article titled, Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Journal Articles

Temperature dependent performance of ITO Schottky contacts on β-Ga₂O₃

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Marko Tadjer, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 053405 (2021)

https://doi.org/10.1116/6.0001211

Published: August 2021

View article titled, Temperature dependent performance of ITO Schottky contacts on β-Ga2O3

Journal Articles

Performance and reliability of β-Ga₂O₃ Schottky barrier diodes at high temperature

Karen Heinselman, Patrick Walker, Andrew Norman, Philip Parilla, David Ginley, Andriy Zakutayev

J. Vac. Sci. Technol. A 39, 040402 (2021)

https://doi.org/10.1116/6.0001003

Published: June 2021

View article titled, Performance and reliability of β-Ga2O3 Schottky barrier diodes at high temperature

Includes: Supplementary data

Journal Articles

Atomic layer deposition and characterization of Zn-doped Ga₂O₃ films

Zsófia Baji, Ildikó Cora, Zsolt Endre Horváth, Emil Agócs, Zoltán Szabó

J. Vac. Sci. Technol. A 39, 032411 (2021)

https://doi.org/10.1116/6.0000838

Published: March 2021

View article titled, Atomic layer deposition and characterization of Zn-doped Ga2O3 films

Journal Articles

Ion implantation in β-Ga₂O₃: Physics and technology

Alena Nikolskaya, Evgenia Okulich, Dmitry Korolev, Anton Stepanov, Dmitry Nikolichev, Alexey Mikhaylov, David Tetelbaum, Aleksei Almaev, Charles Airton Bolzan, Antônio Buaczik, Jr., Raquel Giulian, Pedro Luis Grande, Ashok Kumar, Mahesh Kumar, Daniela Gogova

J. Vac. Sci. Technol. A 39, 030802 (2021)

https://doi.org/10.1116/6.0000928

Published: March 2021

View article titled, Ion implantation in β-Ga2O3: Physics and technology

Journal Articles

Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

Kayla A. Cooley, Haila M. Aldosari, Kezhou Yang, Suzanne E. Mohney

J. Vac. Sci. Technol. A 38, 050805 (2020)

https://doi.org/10.1116/6.0000321

Published: September 2020

View article titled, Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

Journal Articles

Al-rich AlGaN based transistors

Albert G. Baca, Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Erica A. Douglas, Robert J. Kaplar

J. Vac. Sci. Technol. A 38, 020803 (2020)

https://doi.org/10.1116/1.5129803

Published: January 2020

View article titled, Al-rich AlGaN based transistors

Journal Articles

Characterization of electron-beam deposited SnS films: Processing, properties, and ohmic contacts

Jenifer R. Hajzus, Lisa M. Porter

J. Vac. Sci. Technol. A 37, 061504 (2019)

https://doi.org/10.1116/1.5122785

Published: October 2019

View article titled, Characterization of electron-beam deposited SnS films: Processing, properties, and ohmic contacts

Includes: Supplementary data

Journal Articles

Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity

Yafeng Zhu, Fangsen Li, Rong Huang, Tong Liu, Yanfei Zhao, Yang Shen, Jian Zhang, An Dingsun, Yun Guo

J. Vac. Sci. Technol. A 36, 041501 (2018)

https://doi.org/10.1116/1.5025557

Published: May 2018

View article titled, Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity

Includes: Supplementary data

Journal Articles

Proposal of alternative sensitive region for MOS based radiation sensors: Yb₂O₃

Aysegul Kahraman, Ercan Yilmaz

J. Vac. Sci. Technol. A 35, 061511 (2017)

https://doi.org/10.1116/1.4993545

Published: October 2017

View article titled, Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3

Journal Articles

NiO/GaN heterojunction diode deposited through magnetron reactive sputtering

Liuan Li, Xinzhi Wang, Yang Liu, Jin-Ping Ao

J. Vac. Sci. Technol. A 34, 02D104 (2016)

https://doi.org/10.1116/1.4937737

Published: December 2015

View article titled, NiO/GaN heterojunction diode deposited through magnetron reactive sputtering

Journal Articles

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

Przemysław Witczak, Pawel Kempisty, Pawel Strak, Stanisław Krukowski

J. Vac. Sci. Technol. A 33, 061101 (2015)

https://doi.org/10.1116/1.4927166

Published: July 2015

View article titled, Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

Journal Articles

Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

Clint D. Frye, Sergei O. Kucheyev, James H. Edgar, Lars F. Voss, Adam M. Conway, Qinghui Shao, Rebecca J. Nikolić

J. Vac. Sci. Technol. A 33, 031101 (2015)

https://doi.org/10.1116/1.4917010

Published: April 2015

View article titled, Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

Journal Articles

Ni-induced graphitization for enhanced long-term stability of ohmic contact to polycrystalline 3C-SiC

Shuo Chen, Lunet E. Luna, Zheng You, Carlo Carraro, Roya Maboudian

J. Vac. Sci. Technol. A 33, 031507 (2015)

https://doi.org/10.1116/1.4916578

Published: April 2015

View article titled, Ni-induced graphitization for enhanced long-term stability of ohmic contact to polycrystalline 3C-SiC

NARROW

Topics

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga₂O₃ devices

Ge-ion implantation and activation in (100) β-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealing

Critical review of Ohmic and Schottky contacts to β-Ga₂O₃

Thermal stability of band offsets of NiO/GaN

Study of SnO/ɛ-Ga₂O₃ p–n diodes in planar geometry

High synergy atomic layer etching of AlGaN/GaN with HBr and Ar

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

Temperature dependent performance of ITO Schottky contacts on β-Ga₂O₃

Performance and reliability of β-Ga₂O₃ Schottky barrier diodes at high temperature

Atomic layer deposition and characterization of Zn-doped Ga₂O₃ films

Ion implantation in β-Ga₂O₃: Physics and technology

Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride

Al-rich AlGaN based transistors

Characterization of electron-beam deposited SnS films: Processing, properties, and ohmic contacts

Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity

Proposal of alternative sensitive region for MOS based radiation sensors: Yb₂O₃

NiO/GaN heterojunction diode deposited through magnetron reactive sputtering

Ab initio study of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction

Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

Ni-induced graphitization for enhanced long-term stability of ohmic contact to polycrystalline 3C-SiC

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