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Journal Articles

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Jong Hyeon Won, Hyeonhui Jo, Pil Ju Youn, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 062406 (2023)
https://doi.org/10.1116/6.0003004
Published: October 2023
View article titled, Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system

Hsin-Ying Lee, Guo-Long Zhu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053406 (2023)
https://doi.org/10.1116/6.0002826
Published: July 2023
View article titled, Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system
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Journal Articles

Role of SiCl4 addition in CH3F/O2 based chemistry for Si3N4 etching selectively to SiO2, SiCO, and Si

François Boulard, Valentin Bacquié, Aurélien Tavernier, Nicolas Possémé
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 033002 (2023)
https://doi.org/10.1116/6.0002434
Published: March 2023
View article titled, Role of SiCl<sub>4</sub> addition in CH<sub>3</sub>F/O<sub>2</sub> based chemistry for Si<sub>3</sub>N<sub>4</sub> etching selectively to SiO<sub>2</sub>, SiCO, and Si
Open the PDF for Role of SiCl<sub>4</sub> addition in CH<sub>3</sub>F/O<sub>2</sub> based chemistry for Si<sub>3</sub>N<sub>4</sub> etching selectively to SiO<sub>2</sub>, SiCO, and Si in another window
Journal Articles

Atomic layer deposition of Cu2O using copper acetylacetonate

Gabriel Bartholazzi, M. M. Shehata, Daniel H. Macdonald, Lachlan E. Black
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 022402 (2023)
https://doi.org/10.1116/6.0002238
Published: February 2023
View article titled, Atomic layer deposition of Cu<sub>2</sub>O using copper acetylacetonate
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Journal Articles

Variability of band alignment between WS2 and SiO2: Intrinsic versus extrinsic contributions

Gilles Delie, Peter M. Litwin, Gaby C. Abad, Stephen J. McDonnell, Daniele Chiappe, Valeri V. Afanasiev
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062201 (2022)
https://doi.org/10.1116/6.0001987
Published: September 2022
View article titled, Variability of band alignment between WS<sub>2</sub> and SiO<sub>2</sub>: Intrinsic versus extrinsic contributions
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Journal Articles

Thermal stability of band offsets of NiO/GaN

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053401 (2022)
https://doi.org/10.1116/6.0002033
Published: July 2022
View article titled, Thermal stability of band offsets of NiO/GaN
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Journal Articles

Plasma enhanced atomic layer etching of high-k layers on WS2

J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, S. De Gendt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042602 (2022)
https://doi.org/10.1116/6.0001726
Published: May 2022
View article titled, Plasma enhanced atomic layer etching of high-k layers on WS<sub>2</sub>
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Journal Articles

Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042402 (2022)
https://doi.org/10.1116/6.0001787
Published: May 2022
View article titled, Amorphous semi-insulating Al-doped In<sub>2</sub>O<sub>3</sub> growth by atomic layer deposition for thin-film transistors
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Includes: Supplementary data
Journal Articles

Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton, Jihyun Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 020804 (2022)
https://doi.org/10.1116/6.0001701
Published: February 2022
View article titled, Deep level defect states in β-, α-, and <em>ɛ</em>-Ga<sub>2</sub>O<sub>3</sub> crystals and films: Impact on device performance
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Journal Articles

Optoelectronic properties of transparent oxide semiconductor ASnO3 (A = Ba, Sr, and Ca) epitaxial films and thin film transistors

Anup V. Sanchela, Mian Wei, Hai Jun Cho, Hiromichi Ohta
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 020803 (2022)
https://doi.org/10.1116/6.0001474
Published: February 2022
View article titled, Optoelectronic properties of transparent oxide semiconductor <em>A</em>SnO<sub>3</sub> (<em>A</em> = Ba, Sr, and Ca) epitaxial films and thin film transistors
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Journal Articles

Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces—Crystalline orientation dependence

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063207 (2021)
https://doi.org/10.1116/6.0001260
Published: September 2021
View article titled, Band offsets at metalorganic chemical vapor deposited β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> interfaces—Crystalline orientation dependence
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Includes: Supplementary data
Journal Articles

Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes

Antony Premkumar Peter, Takayama Tomomi, Ebisudani Taishi, Shiba Eiichiro, Alfonso Sepulveda, Timothee Blanquart, Yosuke Kimura, Sujith Subramanian, Sylvain Baudot, Briggs Basoene, Anshul Gupta, Anabela Veloso, Elena Capogreco, Hans Mertens, Johan Meersschaut, Thierry Conard, Praveen Dara, Jef Geypen, Gerardo Martinez, Dmitry Batuk, Steven Demuynck, Pierre Morin
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 042401 (2021)
https://doi.org/10.1116/6.0000821
Published: May 2021
View article titled, Engineering high quality and conformal ultrathin SiN<sub>x</sub> films by PEALD for downscaled and advanced CMOS nodes
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Journal Articles

Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 042601 (2021)
https://doi.org/10.1116/6.0000867
Published: May 2021
View article titled, Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching
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Journal Articles

Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors

Su-Hwan Choi, Hyun-Jun Jeong, TaeHyun Hong, Yong Hwan Na, Chi Kwon Park, Myung Yong Lim, Seong Hoon Jeong, Jun Hyung Lim, Jin-Seong Park
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 032406 (2021)
https://doi.org/10.1116/6.0000842
Published: March 2021
View article titled, Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
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Journal Articles

Atomic layer etching of GaN using Cl2 and He or Ar plasma

Simon Ruel, Patricia Pimenta-Barros, Frédéric Le Roux, Nicolas Chauvet, Michel Massardier, Philippe Thoueille, Shirley Tan, Daniel Shin, François Gaucher, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 022601 (2021)
https://doi.org/10.1116/6.0000830
Published: February 2021
View article titled, Atomic layer etching of GaN using Cl<sub>2</sub> and He or Ar plasma
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Journal Articles

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

Naoya Okamoto, Atsushi Takahashi, Yuichi Minoura, Yusuke Kumazaki, Shiro Ozaki, Toshihiro Ohki, Naoki Hara, Keiji Watanabe
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063003 (2020)
https://doi.org/10.1116/6.0000526
Published: October 2020
View article titled, Deep GaN through-substrate via etching using Cl<sub>2</sub>/BCl<sub>3</sub> inductively coupled plasma
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Journal Articles

Atomic-layer etching of GaN by using an HBr neutral beam

Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Hideyuki Kurihara, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032603 (2020)
https://doi.org/10.1116/6.0000126
Published: April 2020
View article titled, Atomic-layer etching of GaN by using an HBr neutral beam
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Journal Articles

Inside the mysterious world of plasma: A process engineer’s perspective

Keren J. Kanarik
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 031004 (2020)
https://doi.org/10.1116/1.5141863
Published: March 2020
View article titled, Inside the mysterious world of plasma: A process engineer’s perspective
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Journal Articles

Silicon nitride spacer etching selectively to silicon using CH3F/O2/He/SiCl4 plasma

Nicolas Possémé, Maxime Garcia-Barros, Christian Arvet, Olivier Pollet, François Leverd, Sébastien Barnola
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 033004 (2020)
https://doi.org/10.1116/1.5145158
Published: March 2020
View article titled, Silicon nitride spacer etching selectively to silicon using CH<sub>3</sub>F/O<sub>2</sub>/He/SiCl<sub>4</sub> plasma
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Journal Articles

Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 023408 (2020)
https://doi.org/10.1116/1.5145206
Published: February 2020
View article titled, Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy
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