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Journal Articles

Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

Amy C. Brummer, Siddharth Kurup, Daniel Aziz, Michael A. Filler, Eric M. Vogel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053201 (2023)
https://doi.org/10.1116/6.0002762
Published: July 2023
View article titled, Investigating wet chemical oxidation methods to form SiO<sub>2</sub> interlayers for self-aligned Pt-HfO<sub>2</sub>-Si gate stacks
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Journal Articles

Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance

Roberta Hawkins, Xinglu Wang, Naim Moumen, Robert M. Wallace, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023203 (2023)
https://doi.org/10.1116/6.0002264
Published: February 2023
View article titled, Impact of process anneals on high-k/β-Ga<sub>2</sub>O<sub>3</sub> interfaces and capacitance
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Journal Articles

Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors

Roberta Hawkins, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053202 (2022)
https://doi.org/10.1116/6.0001818
Published: July 2022
View article titled, Effect of fabrication processes before atomic layer deposition on β-Ga<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/Cr/Au metal–oxide–semiconductor capacitors
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Journal Articles

Influence of the carrier wafer during GaN etching in Cl2 plasma

Thibaut Meyer, Camille Petit-Etienne, Erwine Pargon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 023202 (2022)
https://doi.org/10.1116/6.0001478
Published: January 2022
View article titled, Influence of the carrier wafer during GaN etching in Cl<sub>2</sub> plasma
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Journal Articles

Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 062405 (2021)
https://doi.org/10.1116/6.0001334
Published: October 2021
View article titled, Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiO<em><sub>x</sub></em> capacitors using plasma-enhanced atomic layer deposition
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Journal Articles

Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 012401 (2021)
https://doi.org/10.1116/6.0000626
Published: December 2020
View article titled, Interface characteristics of β-Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/Pt capacitors after postmetallization annealing
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Journal Articles

Carbon content control of silicon oxycarbide film with methane containing plasma

Seokhwi Song, Suhyeon Park, Chanwon Jung, Hyunwoo Park, Youngjoon Kim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 062401 (2020)
https://doi.org/10.1116/6.0000210
Published: September 2020
View article titled, Carbon content control of silicon oxycarbide film with methane containing plasma
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Journal Articles

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

Spyridon Korkos, Nikolaos J. Xanthopoulos, Martha A. Botzakaki, Charalampos Drivas, Styliani Kennou, Spyridon Ladas, Anastasios Travlos, Stavroula N. Georga, Christoforos A. Krontiras
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032402 (2020)
https://doi.org/10.1116/1.5134764
Published: March 2020
View article titled, XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta<sub>2</sub>O<sub>5</sub> thin films onto p-Si substrates
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Journal Articles

Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf0.5Al0.5O/Si gate stacks using Al2O3 passivation layer with various thickness

Juan Gao, Gang He, Die Wang, Shuang Liang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 011101 (2019)
https://doi.org/10.1116/1.5050642
Published: December 2018
View article titled, Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf<sub>0.5</sub>Al<sub>0.5</sub>O/Si gate stacks using Al<sub>2</sub>O<sub>3</sub> passivation layer with various thickness
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Journal Articles

Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3

Aysegul Kahraman, Ercan Yilmaz
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 061511 (2017)
https://doi.org/10.1116/1.4993545
Published: October 2017
View article titled, Proposal of alternative sensitive region for MOS based radiation sensors: Yb<sub>2</sub>O<sub>3</sub>
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Journal Articles

Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Hanearl Jung, Il-Kwon Oh, Seungmin Yeo, Hyungjun Kim, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Soo-Hyun Kim, Jun Hyung Lim, Sunhee Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 031510 (2017)
https://doi.org/10.1116/1.4982224
Published: April 2017
View article titled, Comparative study on growth characteristics and electrical properties of ZrO<sub>2</sub> films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
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Includes: Supplementary data
Journal Articles

Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Daigo Kikuta (菊田 大悟), Kenji Itoh (伊藤 健治), Tetsuo Narita (成田 哲生), Tomohiko Mori (森 朋彦)
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 01B122 (2017)
https://doi.org/10.1116/1.4971399
Published: December 2016
View article titled, Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> nanolaminate for a gate oxide in a GaN-based MOS device
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Journal Articles

Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Ye Jia, Amir M. Dabiran, Uttam Singisetti
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 01A133 (2016)
https://doi.org/10.1116/1.4936928
Published: December 2015
View article titled, Electrical characterization of atomic layer deposited Al<sub>2</sub>O<sub>3</sub>/InN interfaces
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Journal Articles

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Junwoo Son, Varistha Chobpattana, Brian M. McSkimming, Susanne Stemmer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 020602 (2015)
https://doi.org/10.1116/1.4905846
Published: January 2015
View article titled, <em>In-situ</em> nitrogen plasma passivation of Al<sub>2</sub>O<sub>3</sub>/GaN interface states
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Journal Articles

Electrical properties of ultrathin titanium dioxide films on silicon

Shankar Dutta, Leeladhar, Akhilesh Pandey, Om Prakash Thakur, Ramjay Pal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 021507 (2015)
https://doi.org/10.1116/1.4904978
Published: December 2014
View article titled, Electrical properties of ultrathin titanium dioxide films on silicon
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Journal Articles

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Toshihide Nabatame, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Toyohiro Chikyo
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 33, 01A118 (2015)
https://doi.org/10.1116/1.4901231
Published: November 2014
View article titled, Role of the (Ta/Nb)O<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> interface on the flatband voltage shift for Al<sub>2</sub>O<sub>3</sub>/(Ta/Nb)O<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub> multilayer charge trap capacitors
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Journal Articles

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Halit Altuntas, Inci Donmez, Cagla Ozgit-Akgun, Necmi Biyikli
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 041504 (2014)
https://doi.org/10.1116/1.4875935
Published: May 2014
View article titled, Effect of postdeposition annealing on the electrical properties of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on <em>p-</em>Si by plasma-enhanced atomic layer deposition
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Journal Articles

Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison

Sean W. Smith, Wei Wang, Douglas A. Keszler, John F. Conley, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 041501 (2014)
https://doi.org/10.1116/1.4874806
Published: May 2014
View article titled, Solution based prompt inorganic condensation and atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> films: A side-by-side comparison
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Journal Articles

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2

Yuan-Hung Tseng, Bing-Yue Tsui
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 031601 (2014)
https://doi.org/10.1116/1.4867355
Published: March 2014
View article titled, Microtrenching-free two-step reactive ion etching of 4H-SiC using NF<sub>3</sub>/HBr/O<sub>2</sub> and Cl<sub>2</sub>/O<sub>2</sub>
Open the PDF for Microtrenching-free two-step reactive ion etching of 4H-SiC using NF<sub>3</sub>/HBr/O<sub>2</sub> and Cl<sub>2</sub>/O<sub>2</sub> in another window
Journal Articles

Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

Wenyan Wan, Xinhong Cheng, Duo Cao, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyan Shen, Yuehui Yu, DaShen Shen
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 01A127 (2014)
https://doi.org/10.1116/1.4850175
Published: December 2013
View article titled, Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
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