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MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Yu-Xuan Zeng, Xi-Rui Wang, Ruo-Yun Yang, Wei Huang, Lei Yang, Hong-Ping Ma, Qing-Chun Zhang

J. Vac. Sci. Technol. A 42, 053207 (2024)

https://doi.org/10.1116/5.0202640

Published: August 2024

View articletitled, MOS structure with as-deposited ALD Al2O3/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Journal Articles

Investigating wet chemical oxidation methods to form SiO₂ interlayers for self-aligned Pt-HfO₂-Si gate stacks

Amy C. Brummer, Siddharth Kurup, Daniel Aziz, Michael A. Filler, Eric M. Vogel

J. Vac. Sci. Technol. A 41, 053201 (2023)

https://doi.org/10.1116/6.0002762

Published: July 2023

View articletitled, Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

Journal Articles

Impact of process anneals on high-k/β-Ga₂O₃ interfaces and capacitance

Roberta Hawkins, Xinglu Wang, Naim Moumen, Robert M. Wallace, Chadwin D. Young

J. Vac. Sci. Technol. A 41, 023203 (2023)

https://doi.org/10.1116/6.0002264

Published: February 2023

View articletitled, Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance

Journal Articles

Effect of fabrication processes before atomic layer deposition on β-Ga₂O₃/HfO₂/Cr/Au metal–oxide–semiconductor capacitors

Roberta Hawkins, Chadwin D. Young

J. Vac. Sci. Technol. A 40, 053202 (2022)

https://doi.org/10.1116/6.0001818

Published: July 2022

View articletitled, Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors

Journal Articles

Influence of the carrier wafer during GaN etching in Cl₂ plasma

Thibaut Meyer, Camille Petit-Etienne, Erwine Pargon

J. Vac. Sci. Technol. A 40, 023202 (2022)

https://doi.org/10.1116/6.0001478

Published: January 2022

View articletitled, Influence of the carrier wafer during GaN etching in Cl2 plasma

Journal Articles

Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiO_x capacitors using plasma-enhanced atomic layer deposition

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide

J. Vac. Sci. Technol. A 39, 062405 (2021)

https://doi.org/10.1116/6.0001334

Published: October 2021

View articletitled, Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Journal Articles

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono

J. Vac. Sci. Technol. A 39, 012401 (2021)

https://doi.org/10.1116/6.0000626

Published: December 2020

View articletitled, Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

Journal Articles

Carbon content control of silicon oxycarbide film with methane containing plasma

Seokhwi Song, Suhyeon Park, Chanwon Jung, Hyunwoo Park, Youngjoon Kim, Hyeongtag Jeon

J. Vac. Sci. Technol. A 38, 062401 (2020)

https://doi.org/10.1116/6.0000210

Published: September 2020

View articletitled, Carbon content control of silicon oxycarbide film with methane containing plasma

Journal Articles

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta₂O₅ thin films onto p-Si substrates

Spyridon Korkos, Nikolaos J. Xanthopoulos, Martha A. Botzakaki, Charalampos Drivas, Styliani Kennou, Spyridon Ladas, Anastasios Travlos, Stavroula N. Georga, Christoforos A. Krontiras

J. Vac. Sci. Technol. A 38, 032402 (2020)

https://doi.org/10.1116/1.5134764

Published: March 2020

View articletitled, XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

Journal Articles

Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf_0.5Al_0.5O/Si gate stacks using Al₂O₃ passivation layer with various thickness

Juan Gao, Gang He, Die Wang, Shuang Liang

J. Vac. Sci. Technol. A 37, 011101 (2019)

https://doi.org/10.1116/1.5050642

Published: December 2018

View articletitled, Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf0.5Al0.5O/Si gate stacks using Al2O3 passivation layer with various thickness

Journal Articles

Proposal of alternative sensitive region for MOS based radiation sensors: Yb₂O₃

Aysegul Kahraman, Ercan Yilmaz

J. Vac. Sci. Technol. A 35, 061511 (2017)

https://doi.org/10.1116/1.4993545

Published: October 2017

View articletitled, Proposal of alternative sensitive region for MOS based radiation sensors: Yb2O3

Journal Articles

Comparative study on growth characteristics and electrical properties of ZrO₂ films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Hanearl Jung, Il-Kwon Oh, Seungmin Yeo, Hyungjun Kim, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Soo-Hyun Kim, Jun Hyung Lim, Sunhee Lee

J. Vac. Sci. Technol. A 35, 031510 (2017)

https://doi.org/10.1116/1.4982224

Published: April 2017

View articletitled, Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Includes: Supplementary data

Journal Articles

Al₂O₃/SiO₂ nanolaminate for a gate oxide in a GaN-based MOS device

Daigo Kikuta (菊田大悟), Kenji Itoh (伊藤健治), Tetsuo Narita (成田哲生), Tomohiko Mori (森朋彦)

J. Vac. Sci. Technol. A 35, 01B122 (2017)

https://doi.org/10.1116/1.4971399

Published: December 2016

View articletitled, Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device

Journal Articles

Electrical characterization of atomic layer deposited Al₂O₃/InN interfaces

Ye Jia, Amir M. Dabiran, Uttam Singisetti

J. Vac. Sci. Technol. A 34, 01A133 (2016)

https://doi.org/10.1116/1.4936928

Published: December 2015

View articletitled, Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Journal Articles

In-situ nitrogen plasma passivation of Al₂O₃/GaN interface states

Junwoo Son, Varistha Chobpattana, Brian M. McSkimming, Susanne Stemmer

J. Vac. Sci. Technol. A 33, 020602 (2015)

https://doi.org/10.1116/1.4905846

Published: January 2015

View articletitled, In-situ nitrogen plasma passivation of Al2O3/GaN interface states

Journal Articles

Electrical properties of ultrathin titanium dioxide films on silicon

Shankar Dutta, Leeladhar, Akhilesh Pandey, Om Prakash Thakur, Ramjay Pal

J. Vac. Sci. Technol. A 33, 021507 (2015)

https://doi.org/10.1116/1.4904978

Published: December 2014

View articletitled, Electrical properties of ultrathin titanium dioxide films on silicon

Journal Articles

Role of the (Ta/Nb)O_x/Al₂O₃ interface on the flatband voltage shift for Al₂O₃/(Ta/Nb)O_x/Al₂O₃ multilayer charge trap capacitors

Toshihide Nabatame, Akihiko Ohi, Kazuhiro Ito, Makoto Takahashi, Toyohiro Chikyo

J. Vac. Sci. Technol. A 33, 01A118 (2015)

https://doi.org/10.1116/1.4901231

Published: November 2014

View articletitled, Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Journal Articles

Effect of postdeposition annealing on the electrical properties of β-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition

Halit Altuntas, Inci Donmez, Cagla Ozgit-Akgun, Necmi Biyikli

J. Vac. Sci. Technol. A 32, 041504 (2014)

https://doi.org/10.1116/1.4875935

Published: May 2014

View articletitled, Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Journal Articles

Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison

Sean W. Smith, Wei Wang, Douglas A. Keszler, John F. Conley, Jr.

J. Vac. Sci. Technol. A 32, 041501 (2014)

https://doi.org/10.1116/1.4874806

Published: May 2014

View articletitled, Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison

Journal Articles

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF₃/HBr/O₂ and Cl₂/O₂

Yuan-Hung Tseng, Bing-Yue Tsui

J. Vac. Sci. Technol. A 32, 031601 (2014)

https://doi.org/10.1116/1.4867355

Published: March 2014

View articletitled, Microtrenching-free two-step reactive ion etching of 4H-SiC using NF3/HBr/O2 and Cl2/O2

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MOS structure with as-deposited ALD Al₂O₃/4H-SiC heterostructure with high electrical performance: Investigation of the interfacial region

Investigating wet chemical oxidation methods to form SiO₂ interlayers for self-aligned Pt-HfO₂-Si gate stacks

Impact of process anneals on high-k/β-Ga₂O₃ interfaces and capacitance

Effect of fabrication processes before atomic layer deposition on β-Ga₂O₃/HfO₂/Cr/Au metal–oxide–semiconductor capacitors

Influence of the carrier wafer during GaN etching in Cl₂ plasma

Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiO_x capacitors using plasma-enhanced atomic layer deposition

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Carbon content control of silicon oxycarbide film with methane containing plasma

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta₂O₅ thin films onto p-Si substrates

Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf_0.5Al_0.5O/Si gate stacks using Al₂O₃ passivation layer with various thickness

Proposal of alternative sensitive region for MOS based radiation sensors: Yb₂O₃

Comparative study on growth characteristics and electrical properties of ZrO₂ films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Al₂O₃/SiO₂ nanolaminate for a gate oxide in a GaN-based MOS device

Electrical characterization of atomic layer deposited Al₂O₃/InN interfaces

In-situ nitrogen plasma passivation of Al₂O₃/GaN interface states

Electrical properties of ultrathin titanium dioxide films on silicon

Role of the (Ta/Nb)O_x/Al₂O₃ interface on the flatband voltage shift for Al₂O₃/(Ta/Nb)O_x/Al₂O₃ multilayer charge trap capacitors

Effect of postdeposition annealing on the electrical properties of β-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition

Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF₃/HBr/O₂ and Cl₂/O₂

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