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Journal Articles

Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052707 (2023)
https://doi.org/10.1116/6.0002884
Published: August 2023
View article titled, Vertical NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers grown by metalorganic chemical vapor deposition
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Journal Articles

Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching

Benjamin Fontaine, Christelle Boixaderas, Jérôme Dubois, Pascal Gouraud, Arnaud Rival, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053005 (2023)
https://doi.org/10.1116/6.0002751
Published: August 2023
View article titled, Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching
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Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View article titled, Simulation studies of floating field plate in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> power devices and modules
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Journal Articles

Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system

Hsin-Ying Lee, Guo-Long Zhu, Ching-Ting Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053406 (2023)
https://doi.org/10.1116/6.0002826
Published: July 2023
View article titled, Performance and stability of Al-doped HfGaO thin-film transistors deposited by vapor cooling condensation system
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Journal Articles

Investigating wet chemical oxidation methods to form SiO2 interlayers for self-aligned Pt-HfO2-Si gate stacks

Amy C. Brummer, Siddharth Kurup, Daniel Aziz, Michael A. Filler, Eric M. Vogel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053201 (2023)
https://doi.org/10.1116/6.0002762
Published: July 2023
View article titled, Investigating wet chemical oxidation methods to form SiO<sub>2</sub> interlayers for self-aligned Pt-HfO<sub>2</sub>-Si gate stacks
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Journal Articles

Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes

J. P. Olvera-Enríquez, L. I. Espinosa-Vega, I. E. Cortés-Mestizo, C. A. Mercado-Ornelas, F. E. Perea-Parrales, A. Belio-Manzano, C. M. Yee-Rendón, V. H. Méndez-García
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042714 (2023)
https://doi.org/10.1116/6.0002674
Published: July 2023
View article titled, Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes
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Journal Articles

Ultrathin stable Ohmic contacts for high-temperature operation of β-Ga2O3 devices

William A. Callahan, Edwin Supple, David Ginley, Michael Sanders, Brian P. Gorman, Ryan O’Hayre, Andriy Zakutayev
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043211 (2023)
https://doi.org/10.1116/6.0002645
Published: June 2023
View article titled, Ultrathin stable Ohmic contacts for high-temperature operation of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> devices
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Includes: Supplementary data
Journal Articles

Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]

Charles W. Magee, Temel H. Buyuklimanli
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043413 (2023)
https://doi.org/10.1116/6.0002844
Published: June 2023
View article titled, Erratum: “Secondary ion mass spectrometry quantification: Do you remember when a factor of 2 was good enough?” [J. Vac. Sci. Technol. B 41, 030803 (2023)]
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Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Published: June 2023
View article titled, Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films
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Includes: Supplementary data
Journal Articles

N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042709 (2023)
https://doi.org/10.1116/6.0002594
Published: June 2023
View article titled, N<sub>2</sub>O grown high Al composition nitrogen doped β-(AlGa)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> using MOCVD
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Journal Articles

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042706 (2023)
https://doi.org/10.1116/6.0002530
Published: June 2023
View article titled, Structural characterization of epitaxial γ-Ta<sub>2</sub>N thin films and AlN/γ-Ta<sub>2</sub>N heterostructures on SiC substrates
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Journal Articles

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

Fedor Hrubišák, Kristína Hušeková, Xiang Zheng, Alica Rosová, Edmund Dobročka, Milan Ťapajna, Matej Mičušík, Peter Nádaždy, Fridrich Egyenes, Javad Keshtkar, Eva Kováčová, James W. Pomeroy, Martin Kuball, Filip Gucmann
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042708 (2023)
https://doi.org/10.1116/6.0002649
Published: June 2023
View article titled, Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices
Open the PDF for Heteroepitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga<sub>2</sub>O<sub>3</sub> power devices in another window
Includes: Supplementary data
Journal Articles

Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

Zhaojing Gao, Dieudonné Niyonkuru, Arthur Yelon, Clara Santato
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043405 (2023)
https://doi.org/10.1116/6.0002410
Published: June 2023
View article titled, Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester
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Includes: Supplementary data
Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Published: June 2023
View article titled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers
Open the PDF for Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers in another window
Journal Articles

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043102 (2023)
https://doi.org/10.1116/6.0002642
Published: May 2023
View article titled, Ge-ion implantation and activation in (100) β-Ga<sub>2</sub>O<sub>3</sub> for ohmic contact improvement using pulsed rapid thermal annealing