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Journal Articles

Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching

Christian Miersch, Sarah Seidel, Alexander Schmid, Thomas Fuhs, Johannes Heitmann, Franziska C. Beyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 022604 (2024)
https://doi.org/10.1116/6.0003350
Published: February 2024
View article titled, Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
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Journal Articles

Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces—Crystalline orientation dependence

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063207 (2021)
https://doi.org/10.1116/6.0001260
Published: September 2021
View article titled, Band offsets at metalorganic chemical vapor deposited β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> interfaces—Crystalline orientation dependence
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Includes: Supplementary data
Journal Articles

Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching

Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 042601 (2021)
https://doi.org/10.1116/6.0000867
Published: May 2021
View article titled, Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching
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Journal Articles

Atomic layer etching of GaN using Cl2 and He or Ar plasma

Simon Ruel, Patricia Pimenta-Barros, Frédéric Le Roux, Nicolas Chauvet, Michel Massardier, Philippe Thoueille, Shirley Tan, Daniel Shin, François Gaucher, Nicolas Posseme
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 022601 (2021)
https://doi.org/10.1116/6.0000830
Published: February 2021
View article titled, Atomic layer etching of GaN using Cl<sub>2</sub> and He or Ar plasma
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Journal Articles

Atomic-layer etching of GaN by using an HBr neutral beam

Daisuke Ohori, Takahiro Sawada, Kenta Sugawara, Masaya Okada, Ken Nakata, Kazutaka Inoue, Daisuke Sato, Hideyuki Kurihara, Seiji Samukawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032603 (2020)
https://doi.org/10.1116/6.0000126
Published: April 2020
View article titled, Atomic-layer etching of GaN by using an HBr neutral beam
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Journal Articles

Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 023408 (2020)
https://doi.org/10.1116/1.5145206
Published: February 2020
View article titled, Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy
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Journal Articles

Cl2/Ar based atomic layer etching of AlGaN layers

Sébastien Aroulanda, Olivier Patard, Philippe Altuntas, Nicolas Michel, Jorge Pereira, Cédric Lacam, Piero Gamarra, Sylvain L. Delage, Nicolas Defrance, Jean-Claude de Jaeger, Christophe Gaquière
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 041001 (2019)
https://doi.org/10.1116/1.5090106
Published: May 2019
View article titled, Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
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Journal Articles

Selective anisotropic etching of GaN over AlGaN for very thin films

Joel C. Wong, Miroslav Micovic, David F. Brown, Isaac Khalaf, Adam Williams, Andrea Corrion
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 030603 (2018)
https://doi.org/10.1116/1.5012530
Published: April 2018
View article titled, Selective anisotropic etching of GaN over AlGaN for very thin films
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Journal Articles

Sidewall damage in plasma etching of Si/SiGe heterostructures

R. Ding, L. J. Klein, Mark G. Friesen, M. A. Eriksson, A. E. Wendt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 27, 836–843 (2009)
https://doi.org/10.1116/1.3097858
Published: June 2009
View article titled, Sidewall damage in plasma etching of Si/SiGe heterostructures
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Journal Articles

Characterization and modeling of Al Ga N ∕ Ga N heterostructure field effect transistors for low noise amplifiers

S. H. Knox, J. W. M. Rogers, P. N. A. Chyurlia, N. G. Tarr, J. A. Bardwell, H. Tang, S. Haffouz
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 629–633 (2006)
https://doi.org/10.1116/1.2186659
Published: May 2006
View article titled, Characterization and modeling of Al Ga N ∕ Ga N heterostructure field effect transistors for low noise amplifiers
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Journal Articles

Fabrication of spin-current field-effect transistor structures

A. Cabbibo, J. R. Childress, S. J. Pearton, F. Ren, J. M. Kuo
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 15, 1215–1219 (1997)
https://doi.org/10.1116/1.580596
Published: May 1997
View article titled, Fabrication of spin-current field-effect transistor structures
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Journal Articles

Study of GaAs and AlGaAs buried structures by differential photoreflectance spectroscopy

Ali Badakhshan, M. Sydor, W. C. Mitchel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 10, 1842–1845 (1992)
https://doi.org/10.1116/1.577757
Published: July 1992
View article titled, Study of GaAs and AlGaAs buried structures by differential photoreflectance spectroscopy
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Journal Articles

Magnetic field effects on trap‐assisted tunneling in Hg0.78Cd0.22Te metal‐insulator semiconductor capacitors

J. R. Waterman, R. J. Wagner, J. M. Perez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 7, 381–386 (1989)
https://doi.org/10.1116/1.576107
Published: March 1989
View article titled, Magnetic field effects on trap‐assisted tunneling in Hg<sub>0.78</sub>Cd<sub>0.22</sub>Te metal‐insulator semiconductor capacitors
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